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11.发明授权Integrated circuits having interconnects and heat dissipators based on nanostructures 有权具有基于纳米结构的互连和散热器的集成电路公开(公告)号：US08183659B2
公开(公告)日：2012-05-22
申请号：US12830135
申请日：2010-07-02
IPC分类号： H01L27/095
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。
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12.发明授权Integrated circuits having interconnects and heat dissipators based on nanostructures 有权具有基于纳米结构的互连和散热器的集成电路公开(公告)号：US07777291B2
公开(公告)日：2010-08-17
申请号：US11511867
申请日：2006-08-28
IPC分类号： H01L27/095
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。
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公开(公告)号：US07687876B2
公开(公告)日：2010-03-30
申请号：US11412060
申请日：2006-04-25
IPC分类号： H01L27/095
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.
摘要翻译： 本发明提供在导电基材上生长的纳米结构及其制备方法。 根据要求保护的方法生长的纳米结构适用于制造诸如电子束写入器和场发射显示器的电子器件。
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公开(公告)号：US20090108251A1
公开(公告)日：2009-04-30
申请号：US11412060
申请日：2006-04-25
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.
摘要翻译： 本发明提供在导电基材上生长的纳米结构及其制备方法。 根据要求保护的方法生长的纳米结构适用于制造诸如电子束写入器和场发射显示器的电子器件。
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公开(公告)号：US20070096304A1
公开(公告)日：2007-05-03
申请号：US11511867
申请日：2006-08-28
申请人： Mohammad Kabir
发明人： Mohammad Kabir
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。
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16.发明授权Individually addressable cathodes with integrated focusing stack or detectors 失效具有集成聚焦堆叠或探测器的单独寻址阴极公开(公告)号：US06917043B2
公开(公告)日：2005-07-12
申请号：US10260321
申请日：2002-09-30
申请人： Clarence E. Thomas , Larry R. Baylor , Edgar Voelkl , Michael L. Simpson , Michael J. Paulus , Douglas Lowndes , John Whealton , John C. Whitson , John B. Wilgen
发明人： Clarence E. Thomas , Larry R. Baylor , Edgar Voelkl , Michael L. Simpson , Michael J. Paulus , Douglas Lowndes , John Whealton , John C. Whitson , John B. Wilgen
IPC分类号： G01Q30/02 , G01Q70/06 , G03F7/20 , H01J1/304 , H01J3/02 , H01J37/073 , H01J37/28 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： B82Y40/00 , B82Y10/00 , H01J3/021 , H01J37/073 , H01J37/3174 , H01J37/3175 , H01J37/3177 , H01J2237/0635 , H01J2237/31786
摘要： Systems and method are described for addressable field emission array (AFEA) chips. A plurality of individually addressable cathodes are integrated with an electrostatic focusing stack and/or a plurality of detectors on the addressable field emission array. The systems and methods provide advantages including the avoidance of space-charge blow-up.
摘要翻译： 描述了可寻址场发射阵列（AFEA）芯片的系统和方法。 多个可单独寻址的阴极与可寻址场致发射阵列上的静电聚焦堆叠和/或多个检测器集成。 这些系统和方法提供了避免空间电荷爆炸的优点。
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17.发明授权Integrated circuits having interconnects and heat dissipators based on nanostructures 有权具有基于纳米结构的互连和散热器的集成电路公开(公告)号：US08415787B2
公开(公告)日：2013-04-09
申请号：US13476417
申请日：2012-05-21
IPC分类号： H01L23/34
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention relates to a heat dissipator that includes a conductive substrate and a plurality of nanostructures supported by the conductive substrate. The nanostructures are at least partly embedded in an insulator. Each of the nanostructures includes a plurality of intermediate layers on the conductive substrate. At least two of the plurality of intermediate layers are interdiffused, and material of the at least two of the plurality of intermediate layers that are interdiffused is present in the nanostructure.
摘要翻译： 散热器技术领域本发明涉及一种散热器，其包括导电基板和由导电基板支撑的多个纳米结构体。 纳米结构至少部分地嵌入绝缘体中。 每个纳米结构在导电基底上包括多个中间层。 多个中间层中的至少两个相互扩散，并且相互扩散的多个中间层中的至少两个中间层的材料存在于纳米结构中。
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18.发明申请Controlled Growth of a Nanostructure on a Substrate, and Electron Emission Devices Based on the Same 有权基体上的纳米结构的控制生长和基于相同的电子发射器件公开(公告)号：US20100171093A1
公开(公告)日：2010-07-08
申请号：US12725373
申请日：2010-03-16
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.
摘要翻译： 本发明提供在导电基底上生长的纳米结构的阵列。 如本文提供的纳米结构阵列适用于制造诸如电子束写入器和场致发射器件的电子器件。
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公开(公告)号：US07306896B2
公开(公告)日：2007-12-11
申请号：US11353737
申请日：2006-02-14
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： G03C5/00
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J2237/31779 , H01J2237/31786 , Y10S430/143
摘要： An electron beam duplication lithography apparatus and method for focusing electrons emitted from a mask plate as a result of an application of an electric field between a mask plate and a duplication plate. Irradiation of electrons from the mask plate is assisted through an electric field lens or magnetic field lens, or a combination thereof from an electron field emission material formed into a pattern on a flat surface of a substrate. The result is that a congruent or similar pattern is lithographed by electron beam exposure onto an electron beam resist film from a field emission film having the congruent or similar pattern to be created.
摘要翻译： 一种电子束复制光刻设备和方法，用于对由掩模板和复制板之间施加电场的结果聚焦从掩模板发射的电子。 通过电场透镜或磁场透镜或其组合形成在基板的平坦表面上的图案的电子场发射材料来辅助来自掩模板的电子的照射。 其结果是，通过电子束照射到具有一致或类似图案的场致发射膜的电子束抗蚀剂膜上，将所有等同或相似的图案进行平版印刷。
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公开(公告)号：US20060151719A1
公开(公告)日：2006-07-13
申请号：US11353737
申请日：2006-02-14
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： A61N5/00
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J2237/31779 , H01J2237/31786 , Y10S430/143
摘要： An electron beam duplication lithography apparatus and method for focusing electrons emitted from a mask plate as a result of an application of an electric field between a mask plate and a duplication plate. Irradiation of electrons from the mask plate is assisted through an electric field lens or magnetic field lens, or a combination thereof from an electron field emission material formed into a pattern on a flat surface of a substrate. The result is that a congruent or similar pattern is lithographed by electron beam exposure onto an electron beam resist film from a field emission film having the congruent or similar pattern to be created.
摘要翻译： 一种电子束复制光刻设备和方法，用于对由掩模板和复制板之间施加电场的结果聚焦从掩模板发射的电子。 通过电场透镜或磁场透镜或其组合形成在基板的平坦表面上的图案的电子场发射材料来辅助来自掩模板的电子的照射。 其结果是，通过电子束照射到具有一致或类似图案的场致发射膜的电子束抗蚀剂膜上，将所有等同或相似的图案进行平版印刷。
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