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公开(公告)号：US20130230736A1
公开(公告)日：2013-09-05
申请号：US13879617
申请日：2010-10-18
CPC分类号： D01F9/127 , B05D3/107 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/16 , C01B32/162 , C01B32/18 , C23C16/44 , H01L29/0676 , H01L29/1606 , H01L29/2003 , H01L29/413 , H01L29/775 , Y10T428/12396
摘要： A method for manufacturing a plurality of nanostructures (101) on a substrate (102). The method comprises the steps of: depositing a bottom layer (103) on an upper surface of the substrate (102), the bottom layer (103) comprising grains having a first average grain size; depositing a catalyst layer (104) on an upper surface of the bottom layer (103), the catalyst layer (104) comprising grains having a second average grain size different from the first average grain size, thereby forming a stack of layers comprising the bottom layer (103) and the catalyst layer (104); heating the stack of layers to a temperature where nanostructures (101) can form; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer (104).
摘要翻译： 一种用于在基板（102）上制造多个纳米结构（101）的方法。 该方法包括以下步骤：在衬底（102）的上表面上沉积底层（103），底层（103）包含具有第一平均晶粒尺寸的晶粒; 在所述底层（103）的上表面上沉积催化剂层（104），所述催化剂层（104）包含具有不同于所述第一平均晶粒尺寸的第二平均晶粒尺寸的晶粒，从而形成包括所述底层 层（103）和催化剂层（104）; 将层叠层加热到纳米结构（101）可以形成的温度; 以及提供包含反应物的气体，使得反应物与催化剂层（104）接触。
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公开(公告)号：US08106517B2
公开(公告)日：2012-01-31
申请号：US12210091
申请日：2008-09-12
CPC分类号： B32B37/12 , B32B37/06 , B32B37/10 , B32B37/16 , B32B38/0008 , B32B2037/1253 , B32B2307/202 , B32B2307/302 , B32B2307/706 , B32B2309/02 , B32B2309/12 , B32B2310/0831 , B32B2313/04 , B32B2457/00 , B82Y10/00 , C09J9/02 , H01L23/49811 , H01L23/49877 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05016 , H01L2224/05026 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/29006 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/32145 , H01L2224/83855 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/10329 , H01L2924/10336 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T428/24174 , H01L2224/29101 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/00014 , H01L2924/00012
摘要： An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
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3.发明授权Controlled growth of a nanostructure on a substrate, and electron emission devices based on the same 有权基板上的纳米结构的受控生长和基于其的电子发射器件公开(公告)号：US07977761B2
公开(公告)日：2011-07-12
申请号：US12725373
申请日：2010-03-16
IPC分类号： H01L27/095
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.
摘要翻译： 本发明提供在导电基底上生长的纳米结构的阵列。 如本文提供的纳米结构阵列适用于制造诸如电子束写入器和场致发射器件的电子器件。
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4.发明申请Integrated Circuits Having Interconnects and Heat Dissipators Based on Nanostructures 有权具有互连的集成电路和基于纳米结构的散热器公开(公告)号：US20120224327A1
公开(公告)日：2012-09-06
申请号：US13476417
申请日：2012-05-21
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。
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5.发明申请Integrated Circuits Having Interconnects and Heat Dissipators Based on Nanostructures 有权具有互连的集成电路和基于纳米结构的散热器公开(公告)号：US20100328898A1
公开(公告)日：2010-12-30
申请号：US12830135
申请日：2010-07-02
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。
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公开(公告)号：US20080232755A1
公开(公告)日：2008-09-25
申请号：US11929533
申请日：2007-10-30
CPC分类号： G02B6/1225 , B82Y20/00
摘要： The present invention provides for photonic crystals comprising nanostructures grown on a conducting or insulating substrate, and a method of making the same. The photonic crystals can be used in components such as artificial photonic crystals for photonic devices and circuits.
摘要翻译： 本发明提供了包含在导电或绝缘基板上生长的纳米结构的光子晶体及其制造方法。 光子晶体可用于诸如用于光子器件和电路的人造光子晶体的组件。
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7.发明授权Template and method of making high aspect ratio template for lithography and use of the template for perforating a substrate at nanoscale 有权制备用于光刻的高纵横比模板的模板和方法以及使用模板以在纳米尺度上对基底进行穿孔公开(公告)号：US09028242B2
公开(公告)日：2015-05-12
申请号：US13057508
申请日：2009-07-23
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/932
摘要： Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.
摘要翻译： 使用纳米结构制备高纵横比模板，印模和压印的模板和方法，用于光刻，以及使用模板在材料和产品上形成穿孔。
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公开(公告)号：US08253253B2
公开(公告)日：2012-08-28
申请号：US13361436
申请日：2012-01-30
CPC分类号： B32B37/12 , B32B37/06 , B32B37/10 , B32B37/16 , B32B38/0008 , B32B2037/1253 , B32B2307/202 , B32B2307/302 , B32B2307/706 , B32B2309/02 , B32B2309/12 , B32B2310/0831 , B32B2313/04 , B32B2457/00 , B82Y10/00 , C09J9/02 , H01L23/49811 , H01L23/49877 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05016 , H01L2224/05026 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/29006 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/32145 , H01L2224/83855 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/10329 , H01L2924/10336 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T428/24174 , H01L2224/29101 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/00014 , H01L2924/00012
摘要： An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
摘要翻译： 一种包括两个导电表面或层的装置，以及结合到两个导电表面或层的纳米结构组件，以在两个导电表面或层之间形成电连接或热连接，以及制造它们的方法。
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9.发明授权Integrated circuits having interconnects and heat dissipators based on nanostructures 有权具有基于纳米结构的互连和散热器的集成电路公开(公告)号：US08183659B2
公开(公告)日：2012-05-22
申请号：US12830135
申请日：2010-07-02
IPC分类号： H01L27/095
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。
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10.发明授权Integrated circuits having interconnects and heat dissipators based on nanostructures 有权具有基于纳米结构的互连和散热器的集成电路公开(公告)号：US07777291B2
公开(公告)日：2010-08-17
申请号：US11511867
申请日：2006-08-28
IPC分类号： H01L27/095
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。 根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。
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