公开(公告)号：US20120208341A1

公开(公告)日：2012-08-16

申请号：US13453848

申请日：2012-04-23

申请人： Sajan Marokkey ,  Chandrasekhar Sarma ,  Alois Gutmann

发明人： Sajan Marokkey ,  Chandrasekhar Sarma ,  Alois Gutmann

IPC分类号： H01L21/77

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7076 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.

摘要翻译： 用偏光光刻技术集成电路制造的标记和方法。 优选实施例包括由第一部件类型构成的第一多个元件，其中第一元件类型具有第一偏振，第二元件类型具有第二元件类型，其中第二元件类型具有第二偏振，其中 第一极化和第二极化是正交的，其中相邻元件是不同的组件类型。 对准标记可以用于基于强度或基于衍射的对准过程。

公开(公告)号：US20120153281A1

公开(公告)日：2012-06-21

申请号：US13407124

申请日：2012-02-28

申请人： Mark GHINOVKER

发明人： Mark GHINOVKER

IPC分类号： H01L23/544 ,  H01L21/66

CPC分类号： G01B11/272 ,  G01N21/4785 ,  G01N21/9501 ,  G03F7/70633 ,  H01L21/68 ,  H01L21/682 ,  H01L23/544 ,  Y10S438/975

摘要： A semiconductor target for determining a relative shift between two or more successive layers of a substrate is provided. The target comprises a plurality of first structures formed in a first layer, and the first structures have a first center of symmetry (COS). The target further comprises a plurality of second structures formed in a second layer, and the second structures have second COS. The difference between the first COS and the second COS corresponds to an overlay error between the first and second layer and wherein the first and second structures have a 180° rotational symmetry, without having a 90° rotational symmetry, with respect to the first and second COS, respectively.

摘要翻译： 提供了用于确定衬底的两个或更多个连续层之间的相对位移的半导体靶。 目标包括形成在第一层中的多个第一结构，并且第一结构具有第一对称中心（COS）。 目标还包括形成在第二层中的多个第二结构，第二结构具有第二COS，第一COS和第二COS之间的差对应于第一和第二层之间的重叠误差，并且其中第一和第二 结构相对于第一和第二COS分别具有不具有90°旋转对称性的180°旋转对称性。

公开(公告)号：US08043927B2

公开(公告)日：2011-10-25

申请号：US12457773

申请日：2009-06-22

申请人： Byung-Jun Park ,  Tae-Hun Lee ,  Seung-Hun Shin

发明人： Byung-Jun Park ,  Tae-Hun Lee ,  Seung-Hun Shin

IPC分类号： H01L21/76

CPC分类号： H01L27/14683 ,  H01L27/1463 ,  H01L27/1464 ,  Y10S438/975

摘要： In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer.

摘要翻译： 在制造互补金属氧化物半导体（CMOS）图像传感器（CIS）的方法中，可以在包括芯片区域和划线区域的第一基板上形成外延层。 可以通过将第一杂质注入到外延层中而与第一衬底相邻地形成第一杂质层。 可以在芯片区域上的外延层中形成光电二极管。 电连接到光电二极管的电路元件可以形成在外延层上。 可以在外延层上形成保护电路元件的保护层。 第二基底可以附着在保护层上。 可以去除第一衬底以暴露外延层。 可以使用第一杂质层作为对准键，在暴露的外延层上形成滤色器层。 可以在滤色器层上形成微透镜。

公开(公告)号：US08003412B2

公开(公告)日：2011-08-23

申请号：US12888600

申请日：2010-09-23

申请人： Axel A. Granados ,  Benjamin A. Fox ,  Nathaniel J. Gibbs ,  Andrew B. Maki ,  Trevor J. Timpane

发明人： Axel A. Granados ,  Benjamin A. Fox ,  Nathaniel J. Gibbs ,  Andrew B. Maki ,  Trevor J. Timpane

IPC分类号： H01L21/00

CPC分类号： G03F9/7049 ,  G03F9/7003 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G03F9/7088 ,  G03F9/7096 ,  Y10S438/975

摘要： A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction mirror arrays on the substrate, each diffraction mirror array of the set of at least three diffraction minor arrays comprising a single row of mirrors, all mirrors in any particular diffraction mirror array spaced apart a same distance, mirrors in different diffraction mirror arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.

摘要翻译： 将基板与光掩模对准的方法，结构，系统。 该方法包括：将光穿过光刻工具中的光掩模的透明区域，通过工具的透镜并且在基底上的一组至少三个衍射反射镜阵列上，该组的至少三个衍射镜阵列 衍射次要阵列包括单排反射镜，在任何特定衍射镜阵列中间隔相同距离的所有反射镜，在不同距离上间隔开的不同衍射镜阵列中的反射镜; 测量从所述至少三个衍射反射镜阵列组衍射的光的强度到光电检测器阵列上; 以及基于所测量的光强度来调节光掩模或光掩模和透镜的温度。

公开(公告)号：US07989968B2

公开(公告)日：2011-08-02

申请号：US12888697

申请日：2010-09-23

申请人： Axel A. Granados ,  Benjamin A. Fox ,  Nathaniel J. Gibbs ,  Andrew B. Maki ,  Trevor J. Timpane

发明人： Axel A. Granados ,  Benjamin A. Fox ,  Nathaniel J. Gibbs ,  Andrew B. Maki ,  Trevor J. Timpane

IPC分类号： H01L23/544

CPC分类号： G03F9/7049 ,  G03F9/7003 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G03F9/7088 ,  G03F9/7096 ,  Y10S438/975

摘要： A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction mirror arrays on the substrate, each diffraction mirror array of the set of at least three diffraction mirror arrays comprising a single row of mirrors, all mirrors in any particular diffraction mirror array spaced apart a same distance, mirrors in different diffraction mirror arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.

摘要翻译： 将基板与光掩模对准的方法，结构，系统。 该方法包括：将光穿过光刻工具中的光掩模的透明区域，通过工具的透镜并且在基底上的一组至少三个衍射反射镜阵列上，该组的至少三个衍射镜阵列 包括单行反射镜的衍射镜阵列，在任何特定衍射镜阵列中间隔相同距离的所有反射镜，在不同距离上间隔开的不同衍射镜阵列中的反射镜; 测量从所述至少三个衍射反射镜阵列组衍射的光的强度到光电检测器阵列上; 以及基于所测量的光强度来调节光掩模或光掩模和透镜的温度。

公开(公告)号：US20110165723A1

公开(公告)日：2011-07-07

申请号：US13064175

申请日：2011-03-09

申请人： Yuichi Yamamoto ,  Hayato Iwamoto

发明人： Yuichi Yamamoto ,  Hayato Iwamoto

IPC分类号： H01L31/18

CPC分类号： H01L27/14627 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14601 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

摘要翻译： 一种具有背光照明型结构的固态成像装置，其中在其上形成有光接收传感器部分的硅层的背面上形成透镜。 绝缘层被埋在图像拾取区域周围的硅层中，绝缘层被埋在连接焊盘部分的电极层和表面侧的互连层的接触层周围。 还提供了制造这种固态成像装置的方法。

公开(公告)号：US07879627B2

公开(公告)日：2011-02-01

申请号：US12533295

申请日：2009-07-31

申请人： Mark Ghinovker ,  Michael Adel ,  Walter D. Mieher ,  Ady Levy ,  Dan Wack

发明人： Mark Ghinovker ,  Michael Adel ,  Walter D. Mieher ,  Ady Levy ,  Dan Wack

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： G03F7/70633 ,  G03F9/7076 ,  G06K9/00281 ,  G06T7/0004 ,  G06T7/33 ,  G06T2207/30148 ,  Y10S438/975

摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.

摘要翻译： 公开了用于确定衬底的两个或更多个连续层之间的相对位移的覆盖标记以及使用这种重叠标记的方法。 在一个实施例中，覆盖标记包括至少一个测试图案，用于在第一方向上确定基板的第一和第二层之间的相对移动。 测试模式包括第一组工作区和第二组工作区。 第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。 所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。 第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

公开(公告)号：US20100320507A1

公开(公告)日：2010-12-23

申请号：US12805782

申请日：2010-08-19

申请人： Shinji Uya

发明人： Shinji Uya

IPC分类号： H01L31/02 ,  H01L21/50

CPC分类号： H01L27/0694 ,  H01L21/84 ,  H01L27/12 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14812 ,  H01L27/14843 ,  Y10S438/975

摘要： An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.

公开(公告)号：US07727852B2

公开(公告)日：2010-06-01

申请号：US12188489

申请日：2008-08-08

申请人： San-Chi Wang

发明人： San-Chi Wang

IPC分类号： H01L21/76 ,  H01L21/78 ,  H01L21/46 ,  H01L21/00

CPC分类号： H01L23/544 ,  H01L21/6715 ,  H01L21/67259 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： The invention relates to a substrate with a check mark and a method of inspecting position accuracy of conductive glue dispensed on the substrate. The method is implemented on the substrate having at least one transfer pad and at least one check mark arranged near the border of the transfer pad. After the conductive glue spot is dispensed on the transfer pad, the method includes first capturing an image by a video capturing element, then determining whether the conductive glue spot exist in the image and determining whether the conductive glue spot from the image matches a predetermined standard, if not, generating a report and a warning.

摘要翻译： 本发明涉及具有复选标记的基板和检查分配在基板上的导电胶的位置精度的方法。 该方法在具有至少一个传送垫的衬底和在传送垫的边界附近布置的至少一个复选标记的基板上实施。 在导电胶点被分配在传送垫上之后，该方法包括首先通过视频捕获元件捕获图像，然后确定导电胶点是否存在于图像中，并确定图像中的导电胶点是否与预定标准匹配 如果没有，生成报告和警告。

公开(公告)号：US07700383B2

公开(公告)日：2010-04-20

申请号：US11082505

申请日：2005-03-17

申请人： Ryosuke Usui ,  Yasunori Inoue

发明人： Ryosuke Usui ,  Yasunori Inoue

IPC分类号： H01L21/66

CPC分类号： H01L23/544 ,  H01L21/67265 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2224/2402 ,  H01L2224/24195 ,  H01L2224/24226 ,  H01L2224/24265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  Y10S438/975 ,  H01L2924/00

摘要： A manufacturing method for a semiconductor device comprises: mounting a semiconductor element, having an alignment mark, on a substrate; forming a composite of metal film and insulating film such that the surface of the semiconductor element is covered therewith; and removing a part of the composite of metal film and insulating film so as to expose the alignment mark. The position of each electrode of the semiconductor element mounted on the substrate is determined based upon detection results obtained by detection of the exposed alignment mark.

摘要翻译： 一种半导体器件的制造方法，包括：将具有对准标记的半导体元件安装在基板上; 形成金属膜和绝缘膜的复合体，使得半导体元件的表面被覆盖; 并且去除金属膜和绝缘膜的复合物的一部分以暴露对准标记。 基于通过检测曝光的对准标记获得的检测结果来确定安装在基板上的半导体元件的每个电极的位置。