-
公开(公告)号:US11967934B2
公开(公告)日:2024-04-23
申请号:US17319879
申请日:2021-05-13
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor: Takeshi Kawasaki
CPC classification number: H03F1/0288 , H03F3/211 , H03F2203/21131
Abstract: A power amplifier circuit is a Doherty type. A peak amplifier has a first transistor and a second transistor. A first source terminal is connected to a first constant potential line. A first drain terminal and a second source terminal are connected to a first node. A second drain terminal is connected to a second constant potential line having a higher potential than the first constant potential line. A first control terminal is connected to a first bias voltage application circuit, and an input signal is input to the first control terminal via a first alternating current coupling circuit. A second control terminal is connected to a second bias voltage application circuit and is connected to the first node via a second alternating current coupling circuit. The first node is connected to the first constant potential line via a third alternating current coupling circuit.
-
公开(公告)号:US11942902B2
公开(公告)日:2024-03-26
申请号:US18090441
申请日:2022-12-28
Applicant: SKYWORKS SOLUTIONS, INC.
Inventor: Philip John Lehtola , Scott W. Coffin
CPC classification number: H03F1/30 , H03F1/0261 , H03F1/22 , H03F1/302 , H03F3/191 , H03F3/195 , H03F3/211 , H03F3/24 , H03F3/245 , H03F2200/447 , H03F2200/451 , H03F2200/468 , H03F2203/21106 , H04B2001/0408
Abstract: Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.
-
公开(公告)号:US20240098864A1
公开(公告)日:2024-03-21
申请号:US18513376
申请日:2023-11-17
Applicant: Skyworks Solutions, Inc.
Inventor: George Khoury , Leslie Paul Wallis , Yasser Khairat Soliman
IPC: H05B47/19 , F21V23/00 , H01L23/552 , H01L23/66 , H03F1/22 , H03F1/32 , H03F1/34 , H03F1/56 , H03F3/195 , H03F3/24 , H04B1/04 , H04B1/40
CPC classification number: H05B47/19 , F21V23/006 , H01L23/552 , H01L23/66 , H03F1/223 , H03F1/32 , H03F1/3205 , H03F1/347 , H03F1/565 , H03F3/195 , H03F3/245 , H04B1/0475 , H04B1/40 , H04W84/12
Abstract: Front end systems and related devices, integrated circuits, modules, and methods are disclosed. One such front end system includes a low noise amplifier in a receive path and a multi-mode power amplifier circuit in a transmit path. The low noise amplifier includes a first inductor, an amplification circuit, and a second inductor magnetically coupled to the first inductor to provide negative feedback to linearize the low noise amplifier. The multi-mode power amplifier circuit includes a stacked output stage including a transistor stack of two or more transistors. The multi-mode power amplifier circuit also includes a bias circuit configured to control a bias of at least one transistor of the transistor stack based on a mode of the multi-mode power amplifier circuit. Other embodiments of front end systems are disclosed, along with related devices, integrated circuits, modules, methods, and components thereof.
-
公开(公告)号:US20240080002A1
公开(公告)日:2024-03-07
申请号:US18502458
申请日:2023-11-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Young-min Kim , Jae-seung Lee , Jung-seok Lim , Pil-sung Jang
CPC classification number: H03F3/189 , H03F1/22 , H03F1/223 , H03F3/193 , H03F3/72 , H03H7/19 , H03F2200/294 , H03F2200/61 , H03F2203/7206
Abstract: A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.
-
公开(公告)号:US11923807B2
公开(公告)日:2024-03-05
申请号:US17331436
申请日:2021-05-26
Applicant: pSemi Corporation
Inventor: Parvez H. Daruwalla , Yucheng Tong , Jonathan James Klaren
CPC classification number: H03F1/223 , G01R31/2834 , H03F3/195 , H03F3/245 , H03F3/72 , H03F2200/261 , H03F2200/294 , H03F2200/451
Abstract: Circuits and methods for improving IC yield during automated test equipment (ATE) calibration of circuit designs which require IDD calibration and use a closed feedback bias circuit, such as amplifier circuits. The circuit designs include bias branch/active circuit architectures where the active circuit includes one or more active devices. An example first embodiment uses an on-chip calibration switch between the on-chip grounds of a bias network and an active circuit comprising an amplifier. During calibration of the active circuit by the ATE, the calibration switch is closed, and after completion of calibration, the calibration switch is opened. An example second embodiment utilizes an active on-chip feedback loop calibration circuit to equalize voltages between the on-chip grounds of a bias network and an active circuit comprising an amplifier during calibration of the active circuit. Both embodiments mitigate or overcome miscalibration of active circuit current settings resulting from ATE test probe resistance.
-
16.
公开(公告)号:US11894809B2
公开(公告)日:2024-02-06
申请号:US17737878
申请日:2022-05-05
Applicant: pSemi Corporation
Inventor: Rong Jiang , Haopei Deng
CPC classification number: H03F1/223 , H03F1/3205 , H03F1/565 , H03F3/02 , H03F3/195 , H03G3/3042
Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.
-
公开(公告)号:US11881828B2
公开(公告)日:2024-01-23
申请号:US17671374
申请日:2022-02-14
Applicant: pSemi Corporation
Inventor: Jing Li , Emre Ayranci , Miles Sanner
CPC classification number: H03G3/3036 , H03F1/223 , H03F1/3205 , H03F3/193 , H03F3/211 , H03F3/72 , H03G1/0023 , H03G1/0029 , H03G1/0088 , H03G3/001 , H03F2200/156 , H03F2200/159 , H03F2200/294 , H03F2200/451 , H03F2200/489 , H03F2200/492 , H03F2200/61 , H03F2203/7239 , H03G3/3052 , H03G2201/504
Abstract: A multi-gain LNA with inductive source degeneration is presented. The inductive source degeneration is provided via a tunable degeneration network that includes an inductor in parallel with one or more switchable shunting networks. Each shunting network includes a shunting capacitor that can selectively be coupled in parallel to the inductor. A capacitance of the shunting capacitor is calculated so that a combined impedance of the inductor and the shunting capacitor at a narrowband frequency of operation is effectively an inductance. The inductance is calculated according to a desired gain of the LNA. According to one aspect, the switchable shunting network includes a resistor in series connection with the shunting capacitor to provide broadband frequency response stability of the tunable degeneration network. According to another aspect, the LNA includes a plurality of selectable branches to further control gain of the LNA.
-
公开(公告)号:US20240022221A1
公开(公告)日:2024-01-18
申请号:US18319227
申请日:2023-05-17
Applicant: QUALCOMM Incorporated
Inventor: Zaid ABOUSH , Noshir Behli DUBASH , Abhijeet PAUL , Peter Graeme CLARKE
CPC classification number: H03F3/245 , H03F1/223 , H03F1/0277 , H03F2200/451 , H03F2200/294
Abstract: Devices and techniques for amplifying a signal are disclosed. For instance, an amplifier includes an input node and an output node; a first gain segment including: a first transistor, where a gate of the first transistor is coupled to the input node, a first terminal of the first transistor is coupled to a ground, and a second terminal of the first transistor is coupled to the output node; a second gain segment including: a second transistor, where a gate of the second transistor is coupled to the input node, a first terminal of the second transistor is coupled to the ground, and a second terminal of the second transistor is coupled to the output node, where the first gain segment and the second gain segment are arranged in parallel with respect to the output node; and a bias circuit.
-
公开(公告)号:US20240022220A1
公开(公告)日:2024-01-18
申请号:US18352136
申请日:2023-07-13
Applicant: pSemi Corporation
Inventor: Miles Sanner , Emre Ayranci
CPC classification number: H03F3/195 , H03F3/211 , H03F1/56 , H03F3/193 , H03F3/72 , H03F1/223 , H03F3/16 , H03F1/0211 , H03F2203/7209 , H03F2200/391 , H03F2200/249 , H03F2200/421 , H03F2200/489 , H03F2200/372 , H03F2200/111 , H03F2200/222 , H03F2200/231 , H03F2200/267 , H03F2200/294 , H03F2200/387 , H03F2200/396 , H03F2200/451 , H03F2200/492 , H04B1/16
Abstract: A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g m of the input stage of the amplifier, thus improving the noise figure of the amplifier.
-
公开(公告)号:US11837998B2
公开(公告)日:2023-12-05
申请号:US17138869
申请日:2020-12-30
Inventor: Jiangtao Yi , Qiang Su , Huadong Wen
CPC classification number: H03F3/195 , H03F3/245 , H03F2200/168 , H03F2200/451 , H03F2200/99
Abstract: A gain compression compensation circuit of a radio frequency power amplifier includes: a low-pass filtering module configured to receive a part of radio frequency signals output from a first power amplification transistor and to filter, from the part of radio frequency signals, radio frequency signals with a frequency above a fundamental wave to obtain a filtered signal; and a rectifying module configured to receive the filtered signal output by the low-pass filtering module and to rectify the filtered signal to obtain a rectified current; and to output the rectified current to a bias transistor and superimpose the rectified current with a bias current Ibias to flow into the bias transistor.
-
-
-
-
-
-
-
-
-