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145 条记录 (耗时 0.014 秒)

    Crucible-free zone refining of semiconductor material including annular support member
    11.
    发明授权
    Crucible-free zone refining of semiconductor material including annular support member 失效
    包括环形支撑构件的半导体材料的无坩埚区精炼

    公开(公告)号：US4140571A

    公开(公告)日：1979-02-20

    申请号：US840887

    申请日：1977-10-11

    申请人： Heinz Herzer ,  Helmut Zauhar ,  Eberhard Mucke ,  Franz Kohl

    发明人： Heinz Herzer ,  Helmut Zauhar ,  Eberhard Mucke ,  Franz Kohl

    IPC分类号： C30B13/00 ,  C30B13/20 ,  C30B13/28 ,  H01L21/208 ,  B01J17/10

    CPC分类号： C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084

    摘要： A process for the crucible-free zone pulling of a polycrystalline rod heldertically, together with a seed crystal fixed at its lower end, in which a melting zone is produced by means of an induction heating coil surrounding the rod, which zone, by means of relative movement of the coil and rod, traverses the entire length of the rod starting from the seed crystal, characterized in that after attaching the seed crystal to the rod, a support member is moved, below the induction heating coil, towards the rod, which support member rests gently against the rod and after being positioned, solidifies to form a firm support for the rod. A device for carrying out the process is also included.

    摘要翻译： 一种无坩埚区域牵引垂直保持的多晶棒的方法，以及固定在其下端的晶种，其中通过围绕杆的感应加热线圈产生熔融区，该区域通过装置 所述线圈和所述杆的相对运动通过从所述晶种开始的所述杆的整个长度，其特征在于，在将所述晶种连接到所述杆之后，支撑构件在所述感应加热线圈下方朝向所述杆移动， 该支撑构件轻轻靠在杆上并在定位之后固化以形成用于杆的坚固支撑。 还包括用于执行该过程的设备。

    Method and device for crucible-free floating zone melting
    12.
    发明授权
    Method and device for crucible-free floating zone melting 失效
    无坩埚浮区熔化的方法和装置

    公开(公告)号：US4107448A

    公开(公告)日：1978-08-15

    申请号：US704639

    申请日：1976-07-12

    申请人： Hans Stut

    发明人： Hans Stut

    IPC分类号： C30B13/20 ,  C30B13/28 ,  C30B13/30 ,  B01J17/08

    CPC分类号： C30B13/30 ,  C30B13/20 ,  C30B13/28

    摘要： By coupling the molten zone of a semiconductor rod, which is subjected to a crucible-free zone melting operation, to the operating coil used for inductively heating the molten zone, the frequency of the generator energizing the coil is determined. At constant geometry, this frequency is a measure of the molten zone volume and can be used for control purposes. A high-frequency cable disposed between the generator and the operating coil is fully matched, so that substantially only effective power has to be transmitted.

    摘要翻译： 通过将经受无坩埚区域熔融操作的半导体棒的熔融区域耦合到用于感应加热熔融区域的操作线圈，确定对线圈通电的发电机的频率。 在恒定的几何形状下，该频率是熔融区域体积的量度，可用于控制目的。 设置在发电机和操作线圈之间的高频电缆完全匹配，使得仅基本上只有有效的功率必须被传输。

    Light responsive measuring device for heater control
    13.
    发明授权
    Light responsive measuring device for heater control 失效
    用于加热器控制的光响应测量装置

    公开(公告)号：US4018566A

    公开(公告)日：1977-04-19

    申请号：US559016

    申请日：1975-03-17

    申请人： Klaus Zeuch ,  Josef Stadter

    发明人： Klaus Zeuch ,  Josef Stadter

    IPC分类号： C30B11/06 ,  C30B13/00 ,  C30B13/28 ,  C30B29/40 ,  B01J17/08 ,  B01J17/06

    CPC分类号： C30B13/28 ,  C30B13/00 ,  C30B29/44 ,  Y10T117/1004 ,  Y10T117/1012

    摘要： In apparatus for the preparation of a semiconductor compound such as gallium phosphide using the Bridgman method in a horizontal system equipped with a heating device and disposed in a pressure vessel, the reaction tube is mounted in a stationary fashion in a reaction boat and the heating device supported so that it is moveable in the direction of the horizontal axis of the system to permit synthesis of the semiconductor compound along with zone melting and drawing of single crystals. A light guide having its free end arranged below the reaction tube is mounted to the heating device for movement therewith and is used to measure the temperature at the reaction boat.

    摘要翻译： 在装备有加热装置的水平系统中，使用布里奇曼法（Bridgman method）制备半导体化合物如磷化镓的设备，并设置在压力容器中，反应管以静止的方式安装在反应舟皿和加热装置 支撑使得其可以在系统的水平轴线的方向上移动，以允许半导体化合物的合成以及单晶的区域熔融和拉伸。 将其自由端布置在反应管下方的导光体安装到加热装置上以与其一起运动，并用于测量反应舟皿的温度。

    Method for crucible-free zone melting of semiconductor crystal rods
    14.
    发明授权
    Method for crucible-free zone melting of semiconductor crystal rods 失效
    半导体晶体棒无坩埚区熔化的方法

    公开(公告)号：US3996096A

    公开(公告)日：1976-12-07

    申请号：US638261

    申请日：1975-12-08

    申请人： Wolfgang Keller

    发明人： Wolfgang Keller

    IPC分类号： C30B13/28 ,  B01J17/10

    CPC分类号： C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084

    摘要： Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

    摘要翻译： 将多晶半导体棒通过将多晶棒定位在无坩埚区熔融环境中而将其转化为无位错的单晶棒，其中晶种与其一端相连，在晶种和多晶棒的接合处产生熔融区， 将熔体区域可控地移动离开接合点并通过多晶棒到其上的选择点，均匀地支撑被处理的杆的锥形下部，以防止在种子的杆的接合处的振荡等 晶体并且可控地将熔体区域从选择点移动到杆的剩余部分。 优选地，均匀的支撑件由可轴向移动的漏斗形壳体提供，所述壳体附接到晶种保持构件，并且当移动到其操作位置时，填充有自调节振动或减振装置，例如熔融金属 ，金属球体，石英颗粒，沙子等

    Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
    15.
    发明授权
    Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density 失效
    制造具有可调位错密度的单晶半导体材料，特别是硅的方法

    公开(公告)号：US3939035A

    公开(公告)日：1976-02-17

    申请号：US462936

    申请日：1974-04-22

    申请人： Wolfgang Keller

    发明人： Wolfgang Keller

    IPC分类号： C30B13/20 ,  C30B13/28 ,  B01J17/18

    CPC分类号： C30B13/20 ,  C30B13/28

    摘要： A method for obtaining a homogeneous dislocation density in a semiconductor rod, by first subjecting the semiconductor rod in a known manner, to a crucible-free zone melting process whereby it becomes monocrystalline and free of dislocations, and thereafter an annealing zone is moved through the rod, under specified conditions.

    摘要翻译： 通过首先使半导体棒以已知的方式进行无坩埚区熔融处理，从而获得半导体棒中的均匀位错密度的方法，由此其变为单晶并且没有位错，然后退火区移动通过 杆，在规定的条件下。