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公开(公告)号：US06933081B2
公开(公告)日：2005-08-23
申请号：US10144712
申请日：2002-05-15
申请人： Baorui Yang , Matthew Lamantia
发明人： Baorui Yang , Matthew Lamantia
摘要： A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.
摘要翻译： 一种用于在修复用于集成电路的相移掩模中的缺陷的同时最小化对基板的损坏的方法，包括将相位移掩模中的凸块缺陷定位，将第一层保护涂层沉积到所述凸起缺陷的上表面， 第二层保护涂层到相移掩模的相邻凸起缺陷的区域，蚀刻第一层保护涂层并去除凸起缺陷。
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公开(公告)号：US5700605A
公开(公告)日：1997-12-23
申请号：US616306
申请日：1996-03-15
申请人： Shin-ichi Ito , Takayuki Iwamatsu
发明人： Shin-ichi Ito , Takayuki Iwamatsu
摘要： There is disclosed a mask for light exposure which comprises being provided with a light transparent substrate and a mask pattern formed on the light transparent substrate, the mask pattern comprising a light screening pattern composed of a material which screens the exposure light and transmits the light having the longer wavelength than that of the exposure light and a phase shift pattern formed by engraving a part of the light transparent substrate.
摘要翻译： 公开了一种用于曝光的掩模，其包括设置有透光基板和形成在透光基板上的掩模图案，掩模图案包括由屏蔽曝光光的材料构成的遮光图案，并透射具有 比曝光光的波长长，通过雕刻一部分透光性基板而形成的相移图案。
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公开(公告)号：US5439767A
公开(公告)日：1995-08-08
申请号：US197851
申请日：1994-02-17
申请人： Hiroshi Yamashita , Tadao Yasuzato
发明人： Hiroshi Yamashita , Tadao Yasuzato
摘要： A periodic line and space pattern made of chromium film is formed on a glass substrate, and a phase shifter is arranged on every other transparent portion of the line and space pattern. Using a stepper and the phase shift mask, photoresist film coated on a wafer is exposed several times to light of i-line by varying the focus, then developed. Next, the width Ws of the photoresist pattern formed by the exposure to the light through the phase shifter, and the width Wo of the photoresist pattern formed by the exposure to the light without passing through the phase shifter are measured. Based on the relation between Ws and Wo for defocusing, the transmittance error and the phase shift angle error of the phase shifter are obtained.
摘要翻译： 在玻璃基板上形成由铬膜形成的周期性线状和间隔图案，并且在线和空间图案的每隔一个透明部分配置移相器。 使用步进器和相移掩模，通过改变焦点将涂覆在晶片上的光致抗蚀剂膜暴露几次到i线的光线，然后显影。 接下来，测量由通过移相器的光的曝光形成的光致抗蚀剂图案的宽度Ws和通过曝光而不通过移相器而形成的光致抗蚀剂图案的宽度Wo。 基于Ws和Wo之间的散焦关系，获得了移相器的透射率误差和相移角误差。
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公开(公告)号：US4669885A
公开(公告)日：1987-06-02
申请号：US476252
申请日：1983-03-17
申请人： Hideki Ina
发明人： Hideki Ina
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , G03F1/84 , G03F1/86 , G03F9/00 , G06T1/00 , H01L21/027 , H01L21/30 , H01L21/66
摘要： Disclosed is an apparatus for inspecting negatives which is provided with a laser beam generating source, a scanner for scanning the laser beam, a holding device for holding a negative having a pattern formed in a reflective area on a first surface of a transparent plate and transferring the negative in a direction perpendicular to the scanning direction of the laser beam, a first converging lens for converging the laser beam on said first surface, a second converging lens for converging on a first photocell the beam transmitted through the negative, a third converging lens for converging on a second photocell the beam reflected by the first surface of the negative, and a comparator for comparing a first signal stream put out from the first photocell and a second signal stream put out from the second photocell and detecting an undesirable adhering matter.
摘要翻译： 公开了一种用于检查设有激光束发生源的负片的装置，用于扫描激光束的扫描仪，用于保持具有形成在透明板的第一表面上的反射区域中的图案的负片的保持装置， 在与激光束的扫描方向垂直的方向上为负的，用于将激光束会聚在所述第一表面上的第一会聚透镜，用于会聚在第一光电池上的第二会聚透镜，透射通过负的光束;第三会聚透镜 用于会聚在第二光电池上的由负极的第一表面反射的光束，以及用于比较从第一光电池放出的第一信号流和从第二光电池放出的第二信号流的比较器，并检测不期望的粘附物质。
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公开(公告)号：US4365163A
公开(公告)日：1982-12-21
申请号：US218323
申请日：1980-12-19
IPC分类号： G03F1/86 , H01J37/304 , H01J37/00
CPC分类号： G03F1/86 , H01J37/3045
摘要： This describes an automatic defect inspection system as could be applied to metallized masks or other patterns. The system causes each subfield to be individually aligned for inspection irrespective of the previous alignment of the pattern or any other sub-field. This is accomplished by scanning a preselected portion of each sub-field and adjusting the position of the scan based on the resulting signal while scanning a pre-established portion of the sub-field. In this way a portion of each sub-field is used as an alignment mark and stepping errors avoided.Once alignment is achieved a probe, comparable to the size of the minimum defect to be detected is scanned over the sub-field with an overlapping pattern to find defects such as excessive metal, metal in improper places or points where the metal is missing.
摘要翻译： 这描述了可应用于金属化掩模或其它图案的自动缺陷检查系统。 无论模式或任何其他子场的先前对齐如何，系统都会使每个子区域单独对齐。 这是通过扫描每个子场的预选部分并且在扫描子场的预先建立的部分的同时基于所得到的信号来调整扫描的位置来实现的。 以这种方式，每个子场的一部分被用作对准标记并避免了步进错误。 一旦实现了对准，就可以通过重叠图案在子场上扫描与待检测的最小缺陷尺寸相当的探针，以发现缺陷，例如过多的金属，金属在不适当的位置或金属缺失点。
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公开(公告)号：US4256778A
公开(公告)日：1981-03-17
申请号：US925791
申请日：1978-07-18
摘要： A method of treating a photo mask comprising preparing the photo mask which has a conductive transparent substance on a major surface of an insulating substrate and which is formed with a mask pattern of an opaque substance on the conductive transparent substance, and irradiating the mask with an electron beam to inspect and/or retouch said mask.
摘要翻译： 一种处理光掩模的方法，包括在绝缘基片的主表面上准备具有导电透明物质的光掩模，并且在导电透明物质上形成具有不透明物质的掩模图案，并且将掩模用 电子束来检查和/或润饰所述掩模。
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公开(公告)号：US20230375917A1
公开(公告)日：2023-11-23
申请号：US17628484
申请日：2021-08-13
发明人： Xiuxuan ZHANG , Zhineng KONG
CPC分类号： G03F1/74 , G03F1/86 , G03F1/70 , G03F7/70433
摘要： A method and a device for correcting a placement error of a photomask are provided. The method includes: acquiring an exposure offset during a wafer exposure after photomask manufacture is completed, wherein the wafer exposure is a process of forming a circuit pattern on a wafer surface by exposure; and determining a compensation offset for subsequent photomask manufacture according to the exposure offset, to correct a placement error of a photomask, wherein the compensation offset and the exposure offset are vector values that are equal in value and opposite in direction. The method and device for correcting the placement error of the photomask provided in the embodiments of the present disclosure can reduce an overlay error existing in a photolithography process of a semiconductor device by correcting a placement error of a photomask.
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18.发明申请公开(公告)号：US20230074316A1
公开(公告)日：2023-03-09
申请号：US17826796
申请日：2022-05-27
发明人： Soeun Shin , Minah Kim , Jin Choi
摘要： Methods of fabricating lithographic masks include performing mask process correction (MPC) on a mask tape out (MTO) design layout. Performing MPC may include identifying a plurality of unit cells (each being iterated in the MTO design layout and including a plurality of curve patterns), and performing model-based MPC on at least one of the plurality of unit cells. These methods may further include performing electron beam exposure based on the MTO design layout on which the MPC is performed. The performing model-based MPC on at least one of the plurality of unit cells may be based on at least one of an aspect ratio, sizes, curvatures of curved edges, density, and a duty of the plurality of curve patterns.
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公开(公告)号：US11531277B2
公开(公告)日：2022-12-20
申请号：US17499182
申请日：2021-10-12
发明人： Jihoon Na , Sungho Kang , Jaewhan Sung , Hak-Seok Lee , Hyunjune Cho
摘要： An EUV mask inspection system includes a mask receiving unit configured to receive a manufactured EUV mask, a main chamber configured to perform an inspection on the EUV mask, and a load-lock chamber disposed between the mask receiving unit and the main chamber. The load-lock chamber includes a mask table for loading the EUV mask, an UV lamp disposed adjacent the mask table in a first direction, a cold trap disposed adjacent the mask table in a second direction, and a vacuum pump. The first direction is a direction perpendicular to a sidewall of the mask table, and the second direction is a direction perpendicular to a top surface of the mask table. The UV lamp is configured to evaporate water molecules on the EUV mask by irradiating UV light onto the EUV mask. The cold trap is configured to trap the water molecules evaporated from the EUV mask.
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公开(公告)号：US20220317563A1
公开(公告)日：2022-10-06
申请号：US17839432
申请日：2022-06-13
申请人： FUJIFILM Corporation
IPC分类号： G03F1/68 , G03F7/40 , G03F7/32 , G03F7/11 , G03F7/039 , G03F7/16 , G03F7/00 , G03F1/86 , G03F7/38 , H01J49/10
摘要： A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.
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