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    OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
    192.
    发明申请
    OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS 有权
    使用GaN衬底激光应用的光学器件结构

    公开(公告)号：US20160006217A1

    公开(公告)日：2016-01-07

    申请号：US14736939

    申请日：2015-06-11

    Applicant: Soraa Laser Diode, Inc.

    Inventor： James W. Raring ,  Daniel F. Feezell ,  Nicholas J. Pfister ,  Rajat Sharma ,  Mathew C. Schmidt ,  Christiane Poblenz Elsass ,  Yu-Chia Chang

    IPC: H01S5/22 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343 ,  H01S5/02 ,  H01S5/028

    CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/34333

    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

    Abstract translation: 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约为-1度且朝向（11-20）小于约+/- 0.3度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在优选实施例中，激光条纹区域的特征在于基本上平行于c方向的空腔取向，激光条纹区域具有第一端和第二端。 该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。 该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。

    Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
    193.
    发明授权
    Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates 有权
    从多个含镓和氮的衬底制造激光二极管器件

    公开(公告)号：US09209596B1

    公开(公告)日：2015-12-08

    申请号：US14175622

    申请日：2014-02-07

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

    IPC: H01L21/302 ,  H01S5/00 ,  H01L29/20 ,  H01L33/16

    CPC classification number: H01S5/34333 ,  H01L24/29 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/50 ,  H01S5/00 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202

    Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

    Abstract translation: 在一个实例中，本发明提供一种含镓和氮的多层结构及相关方法。 该结构具有多个含镓和氮的半导体衬底，每个含镓和氮的半导体衬底（“衬底”）具有覆盖每个衬底的顶侧的多个外延生长层。 该结构对于每个基板具有参考晶体方向的取向。 该结构具有耦合到每个基板的第一手柄基板，使得每个基板与沿第一手柄基板的选定方向配置的空间区域对齐，该空间区域具有比总背面区域 多个基板被布置成覆盖在第一手柄基板上的平铺构造。 每个基板的参考晶体方向在10度以内平行于选定方向的空间区域。 该结构具有第一接合介质，其设置在第一手柄基板和每个基板之间，同时保持参考晶体取向与第一手柄基板的选定方向之间的对准; 以及被形成为覆盖在被结合到第一手柄基板的同时构成的每个基板的处理区域。 根据实施例，经处理的区域可以包括上述处理步骤和/或步骤的任何组合。

    LASER BASED DISPLAY METHOD AND SYSTEM
    197.
    发明申请
    LASER BASED DISPLAY METHOD AND SYSTEM 有权
    基于激光的显示方法和系统

    公开(公告)号：US20140226079A1

    公开(公告)日：2014-08-14

    申请号：US14199672

    申请日：2014-03-06

    Applicant: Soraa Laser Diode, Inc.

    Inventor： James W. Raring ,  Paul Rudy

    IPC: H04N5/74

    CPC classification number: G03B21/2033 ,  H04N5/74 ,  H04N5/7441 ,  H04N5/7475 ,  H04N9/31 ,  H04N9/3129 ,  H04N9/3132 ,  H04N13/398 ,  H04N2005/745 ,  H04N2005/7483

    Abstract: The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as a light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well.

    Abstract translation: 本发明涉及显示技术。 更具体地，本发明的各种实施例提供投影显示系统，其中使用一个或多个激光二极管作为用于说明图像的光源。 在一组实施例中，本发明提供使用使用含氮化镓的材料制造的蓝色和/或绿色激光的投影仪系统。 在另一组实施例中，本发明提供具有由蓝色和/或绿色激光装置照亮的数字照明处理引擎的投影系统。 在一个实施例中，本发明提供一种3D显示系统。 还有其它实施例。

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