公开(公告)号：US20070264598A1

公开(公告)日：2007-11-15

申请号：US11416263

申请日：2006-05-01

Applicant: Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

IPC: G03F7/20

CPC classification number: G03F7/38 ,  G03F7/095

Abstract: A process of forming a fine pattern including forming a first photoresist layer over a first layer of a semiconductor device. Portions of the first photoresist layer are exposed causing a photochemical reaction therein. Prior to developing the first photoresist layer, a second photoresist layer is formed over the first photoresist layer, and wherein at least one of the first photoresist layer and second photoresist layer comprises a photo base generator.

Abstract translation: 一种形成精细图案的方法，包括在半导体器件的第一层上形成第一光致抗蚀剂层。 暴露第一光致抗蚀剂层的部分，导致其中的光化学反应。 在显影第一光致抗蚀剂层之前，在第一光致抗蚀剂层之上形成第二光致抗蚀剂层，并且其中第一光致抗蚀剂层和第二光致抗蚀剂层中的至少一个包括光源发生器。

公开(公告)号：US20070085034A1

公开(公告)日：2007-04-19

申请号：US11251330

申请日：2005-10-14

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

公开(公告)号：US20070077517A1

公开(公告)日：2007-04-05

申请号：US11324588

申请日：2006-01-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C1/00

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: A coating material disposed overlying a photo sensitive layer during an immersion lithography process includes a polymer that is substantially insoluble to an immersion fluid and an acid capable of neutralizing a base quencher from the photo sensitive layer.

Abstract translation: 在浸渍光刻工艺期间设置在光敏层上的涂层材料包括基本上不溶于浸没流体的聚合物和能够从光敏层中和碱猝灭剂的酸。

公开(公告)号：US20070058263A1

公开(公告)日：2007-03-15

申请号：US11225268

申请日：2005-09-13

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G02B1/06

CPC classification number: G03F7/70341

Abstract: The present disclosure provides an immersion lithography system. The system includes: an imaging lens having a front surface, a substrate stage positioned underlying the front surface of the imaging lens, and an immersion fluid retaining structure configured to hold a first fluid at least partially filling a space between the front surface and a substrate on the substrate stage. The immersion fluid retaining structure further comprises at least one of: a first inlet positioned proximate the imaging lens and coupled to a vacuum pump system, the first inlet operable to provide the first fluid to the space between the front surface and the substrate, and a second inlet positioned proximate the imaging lens and operable to provide a second fluid on the substrate.

Abstract translation: 本公开提供了一种浸没式光刻系统。 该系统包括：成像透镜，其具有前表面，位于成像透镜的前表面下方的基底台;以及浸没流体保持结构，其被配置为保持至少部分地填充前表面和基底之间的空间的第一流体 在衬底上。 浸没流体保持结构还包括以下至少一个：位于成像透镜附近并联接到真空泵系统的第一入口，第一入口可操作以将第一流体提供到前表面和基底之间的空间，以及 第二入口位于成像透镜附近并可操作以在基底上提供第二流体。

公开(公告)号：US20070004182A1

公开(公告)日：2007-01-04

申请号：US11280162

申请日：2005-11-16

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/20 ,  H01L21/36

CPC classification number: G03F7/70925 ,  G03F7/70341 ,  G03F7/70916

Abstract: An immersion lithography system includes an immersion fluid holder for containing an immersion fluid. The system further includes a stage for positioning a resist-coated semiconductor wafer in the immersion fluid holder and a lens proximate to the immersion fluid holder and positionable for projecting an image through the immersion fluid and onto the resist-coated semiconductor wafer. The immersion fluid holder includes a coating configured to reduce contaminate adhesion from contaminates in the immersion fluid.

Abstract translation: 浸没式光刻系统包括用于容纳浸液的浸液流体保持器。 该系统还包括用于将浸渍液体保持器中的抗蚀剂涂覆的半导体晶片定位的台和靠近浸没流体保持器的透镜，并且可定位用于将图像投影通过浸没流体并且涂覆到抗蚀剂涂覆的半导体晶片上。 浸没流体保持器包括被配置为减少污染物从浸渍流体中的污染物粘附的涂层。

公开(公告)号：US20060281320A1

公开(公告)日：2006-12-14

申请号：US11401690

申请日：2006-04-11

Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: H01L21/311

CPC classification number: G03F7/405

Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

公开(公告)号：US20060281030A1

公开(公告)日：2006-12-14

申请号：US11152559

申请日：2005-06-14

Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/405

Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

公开(公告)号：US20060028626A1

公开(公告)日：2006-02-09

申请号：US10910480

申请日：2004-08-03

Applicant: Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

Inventor： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

IPC: G03B27/52

CPC classification number: G03F7/70341

Abstract: A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer. An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

Abstract translation: 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

公开(公告)号：US20050272221A1

公开(公告)日：2005-12-08

申请号：US10864562

申请日：2004-06-08

Applicant: Yu Yen ,  Ching-Yu Chang

Inventor： Yu Yen ,  Ching-Yu Chang

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An integrated circuit in which measurement of the alignment between subsequent layers has less susceptibility to stress induced shift. A first layer of the structure has a first overlay mark. A second and/or a third layer are formed in the alignment structure and on the first layer. Portions of the second and/or third layer are selectively removed from regions in and around the first overlay mark. A second overlay mark is formed and aligned to the first overlay mark. The alignment between the second overlay mark and first overlay mark may be measured with an attenuated error due to reflection and refraction or due to an edge profile shift of the first overlay mark.

Abstract translation: 一种集成电路，其中后续层之间的对准测量对应力诱导偏移具有较小的敏感性。 该结构的第一层具有第一覆盖标记。 在对准结构中和第一层上形成第二层和/或第三层。 第二层和/或第三层的部分从第一重叠标记中和周围的区域选择性地去除。 形成第二重叠标记并与第一覆盖标记对准。 可以由于反射和折射或由于第一重叠标记的边缘轮廓偏移而具有衰减误差来测量第二覆盖标记和第一覆盖标记之间的对准。

公开(公告)号：US20050214654A1

公开(公告)日：2005-09-29

申请号：US10810920

申请日：2004-03-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C5/00 ,  G03F1/14 ,  G03F9/00 ,  G21K5/10 ,  H01J37/08

CPC classification number: G03F1/60 ,  G03F1/40 ,  H01J2237/31794

Abstract: An ESD-resistant photomask and method of preventing mask ESD damage is disclosed. The ESD-resistant photomask includes a mask substrate, a pattern-forming material provided on the substrate, a circuit pattern defined by exposure regions etched in the pattern-forming material, and positive or negative ions implanted into the mask substrate throughout ion implantation regions. The ions in the ion implantation regions dissipate electrostatic charges on the mask, thus preventing the buildup of electrostatic charges which could otherwise attract image-distorting particles to the mask or damage the mask.

Abstract translation: 公开了一种防静电防护光掩模和防止掩膜ESD损伤的方法。 防静电光掩模包括掩模基板，设置在基板上的图案形成材料，由在图案形成材料中蚀刻的曝光区域限定的电路图案，以及在离子注入区域中注入到掩模基板中的正或负离子。 离子注入区域中的离子消耗掩模上的静电电荷，从而防止静电电荷的积累，否则可能会吸引图像变形颗粒到掩模或损坏掩模。