公开(公告)号：US20150228704A1

公开(公告)日：2015-08-13

申请号：US14616995

申请日：2015-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Hisao IKEDA

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3293 ,  H01L27/3204 ,  H01L27/3297 ,  H01L51/0097 ,  H01L51/5212 ,  H01L51/5228 ,  H01L2251/5338 ,  Y02E10/549

Abstract: To provide a display device that is suitable for increasing in size, a display device in which display unevenness is suppressed, or a display device that can display an image along a curved surface. The display device includes a first display panel and a second display panel each including a pair of substrates. The first display panel and the second display panel each include a first region which can transmit visible light, a second region which can block visible light, and a third region which can perform display. The third region of the first display panel and the first region of the second display panel overlap each other. The third region of the first display panel and the second region of the second display panel do not overlap each other.

Abstract translation: 为了提供适合于增加尺寸的显示装置，可以抑制显示不均匀性的显示装置，或能够沿曲面显示图像的显示装置。 显示装置包括第一显示面板和第二显示面板，每个显示面板包括一对基板。 第一显示面板和第二显示面板各自包括能够透射可见光的第一区域，能够阻挡可见光的第二区域，以及可以进行显示的第三区域。 第一显示面板的第三区域和第二显示面板的第一区域彼此重叠。 第一显示面板的第三区域和第二显示面板的第二区域不重叠。

公开(公告)号：US20150179635A1

公开(公告)日：2015-06-25

申请号：US14640235

申请日：2015-03-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: H01L27/06

CPC classification number: H01L27/1225 ,  G09G3/3233 ,  G09G3/3275 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/045 ,  H01L27/06 ,  H01L27/0629 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3241 ,  H01L33/62

Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

Abstract translation: 目的是为了防止操作缺陷，并且减小场效应晶体管的阈值电压的波动的影响。 提供场效应晶体管，开关和电容器。 场效应晶体管包括第一栅极和第二栅极，第一栅极和第二栅极之间具有沟道形成区域彼此重叠，并且场效应晶体管的阈值电压根据第二栅极的电位而变化。 该开关具有确定场效应晶体管的源极和漏极之一与场效应晶体管的第二栅极之间的电连接是否建立的功能。 电容器具有在场效应晶体管的第二栅极和场效应晶体管的源极和漏极之间保持电压的功能。

公开(公告)号：US20150179112A1

公开(公告)日：2015-06-25

申请号：US14643160

申请日：2015-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC: G09G3/34 ,  G09G3/36

CPC classification number: G09G3/3406 ,  G09G3/2025 ,  G09G3/3413 ,  G09G3/3607 ,  G09G3/3659 ,  G09G2300/0456 ,  G09G2330/021

Abstract: A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.

Abstract translation: 一种液晶显示装置，包括背光源和包括第一至第2n扫描线的像素部分，其中，在表示彩色图像的第一种情况下，由第一至第n扫描线控制的第一像素被配置为表示 使用以第一旋转顺序提供的第一至第三色调中的至少一个色调的第一图像，以及由第（n + 1）至第2n扫描线控制的第二像素，被配置为使用至少一个 第一至第三色调以第二旋转顺序提供，其中，在表示单色图像的第二种情况下，由第一至第2n扫描线控制的第一和第二像素被配置为通过由 所述反射像素电极，并且其中所述第一旋转顺序与所述第二旋转顺序不同。

公开(公告)号：US20150155345A1

公开(公告)日：2015-06-04

申请号：US14619239

申请日：2015-02-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  G09G3/32 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/0233

Abstract: In a light-emitting device, supply of current is controlled using a transistor having a normal gate electrode (a first gate electrode) and a second gate electrode for controlling threshold voltage. The light-emitting device comprises one or more switches for selecting conduction or non-conduction between the first gate electrode and a drain terminal of the transistor. When the threshold voltage of the transistor is acquired, the first gate electrode and the drain terminal of the transistor are brought into conduction with the switch, and the threshold voltage of the transistor is shifted by controlling the potential of the second gate electrode.

Abstract translation: 在发光装置中，使用具有用于控制阈值电压的普通栅电极（第一栅电极）和第二栅电极的晶体管来控制电流供给。 发光器件包括用于选择晶体管的第一栅电极和漏极端之间的导通或非导通的一个或多个开关。 当获取晶体管的阈值电压时，晶体管的第一栅电极和漏极端子与开关导通，并且通过控制第二栅电极的电位来使晶体管的阈值电压发生偏移。

公开(公告)号：US20150155304A1

公开(公告)日：2015-06-04

申请号：US14620409

申请日：2015-02-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

Abstract: An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.

Abstract translation: 目的是降低半导体器件的制造成本。 目的是提高半导体器件的开口率。 目的是使半导体器件的显示部分显示更高清晰度的图像。 目的在于提供一种可以高速运转的半导体装置。 该半导体器件包括一个基板上的驱动电路部分和显示部分。 驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。 显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

公开(公告)号：US20150070258A1

公开(公告)日：2015-03-12

申请号：US14474330

申请日：2014-09-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: G09G3/36

CPC classification number: G09G3/3677 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G09G2300/0814 ,  G09G2310/0286 ,  G09G2310/06 ,  G09G2310/08 ,  G09G2320/0223 ,  G09G2330/021 ,  G11C19/28 ,  G11C19/287

Abstract: A scan line to which a selection signal or a non-selection signal is input from its end, and a transistor in which a clock signal is input to a gate, the non-selection signal is input to a source, and a drain is connected to the scan line are provided. A signal input to the end of the scan line is switched from the selection signal to the non-selection signal at the same or substantially the same time as the transistor is turned on. The non-selection signal is input not only from one end but also from both ends of the scan line. This makes it possible to inhibit the potentials of portions in the scan line from being changed at different times.

Abstract translation: 从其端部输入选择信号或非选择信号的扫描线和将时钟信号输入到栅极的晶体管，非选择信号被输入到源极，并且漏极连接 提供到扫描线。 与晶体管导通相同或基本上相同的时间，将输入到扫描线的末端的信号从选择信号切换到非选择信号。 非选择信号不仅从一端输入，而且从扫描线的两端输入。 这使得可以抑制扫描线中的部分的电位在不同时间被改变。

公开(公告)号：US20150062477A1

公开(公告)日：2015-03-05

申请号：US14467174

申请日：2014-08-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryo HATSUMI ,  Daisuke KUBOTA ,  Hiroyuki MIYAKE

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1343

CPC classification number: G02F1/133345 ,  G02F1/133707 ,  G02F1/134363 ,  G02F2001/134318 ,  G02F2001/134372 ,  G02F2001/13606

Abstract: A display device with less light leakage and excellent contrast is provided. A display device having a high aperture ratio and including a large-capacitance capacitor is provided. A display device in which wiring delay due to parasitic capacitance is reduced is provided. A display device includes a transistor over a substrate, a pixel electrode connected to the transistor, a signal line electrically connected to the transistor, a scan line electrically connected to the transistor and intersecting with the signal line, and a common electrode overlapping with the pixel electrode and the signal line with an insulating film provided therebetween. The common electrode includes stripe regions extending in a direction intersecting with the signal line.

Abstract translation: 提供了具有较少光泄漏和优异对比度的显示装置。 提供具有高开口率并包括大容量电容器的显示装置。 提供了由于寄生电容引起的布线延迟减小的显示装置。 显示装置包括在基板上的晶体管，连接到晶体管的像素电极，电连接到晶体管的信号线，电连接到晶体管并与信号线相交的扫描线，以及与像素重叠的公共电极 电极和其间具有绝缘膜的信号线。 公共电极包括在与信号线相交的方向上延伸的条纹区域。

公开(公告)号：US20150014680A1

公开(公告)日：2015-01-15

申请号：US14323341

申请日：2014-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Takahiro SATO ,  Masami JINTYOU

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G06F3/041 ,  G06F2203/04103 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Abstract translation: 提供了包括晶体管和连接部分的半导体器件。 晶体管包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜和与栅电极重叠的位置，电连接到氧化物半导体膜的源极和漏极; 连接部包括与形成有栅电极的表面相同的表面上的第一布线，与形成有源极和漏极的表面相同的表面上的第二布线，以及连接第一布线的第一布线 接线和第二个接线。 第二配线的上端部和下端部之间的距离比源电极和漏电极的上端部与下端部的距离长。

公开(公告)号：US20140354524A1

公开(公告)日：2014-12-04

申请号：US14461993

申请日：2014-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: G09G3/36

CPC classification number: G09G5/18 ,  G02F1/13624 ,  G02F1/136286 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G09G3/006 ,  G09G3/3413 ,  G09G3/3426 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3696 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2310/0235 ,  G09G2310/0286

Abstract: To increase the frequency of input of image signals in terms of design in a field-sequential liquid crystal display device. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion of the liquid crystal display device. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device.

Abstract translation: 在现场顺序液晶显示装置的设计方面增加图像信号的输入频率。 图像信号同时提供给在液晶显示装置的像素部分中排列成矩阵的像素中的多行中提供的像素。 因此，可以在不改变包括在液晶显示装置中的晶体管等的响应速度的情况下增加对每个像素的图像信号的输入频率。

公开(公告)号：US20140340608A1

公开(公告)日：2014-11-20

申请号：US14272742

申请日：2014-05-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Kenichi OKAZAKI ,  Masahiko HAYAKAWA ,  Shinpei MATSUDA

IPC: H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/1225 ,  G02F1/134309 ,  G02F1/1368 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

Abstract translation: 提供了一种半导体器件，其包括氧化物半导体，并且其中抑制了由于栅极BT应力而形成的寄生沟道。 此外，提供了包括具有优异电特性的晶体管的半导体器件。 半导体器件包括具有双栅极结构的晶体管，其中氧化物半导体膜设置在第一栅电极和第二栅电极之间; 在所述氧化物半导体膜和所述第一栅电极之间以及所述氧化物半导体膜和所述第二栅电极之间设置栅绝缘膜; 并且在晶体管的沟道宽度方向上，第一或第二栅电极与氧化物半导体膜与第一或第二栅电极之间的栅极绝缘膜面对氧化物半导体膜的侧面。