公开(公告)号：US11205699B2

公开(公告)日：2021-12-21

申请号：US16655429

申请日：2019-10-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Arkadiusz Malinowski ,  Baofu Zhu ,  Frank W. Mont ,  Julien Frougier ,  Ali Razavieh

IPC: H01L29/08 ,  H01L29/78

Abstract: One illustrative transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate and first and second overall epitaxial cavities formed in the semiconductor substrate on opposite sides of the gate structure. In one embodiment, each of the first and second overall epitaxial cavities includes a substantially vertically oriented upper epitaxial cavity and a lower epitaxial cavity, wherein the substantially vertically oriented upper epitaxial cavity extends from an upper surface of the semiconductor substrate to the lower epitaxial cavity. A lateral width of the lower epitaxial cavity is greater than a lateral width of the upper epitaxial cavity. The device also includes epitaxial semiconductor material positioned in each of the first and second overall epitaxial cavities.

公开(公告)号：US11204463B1

公开(公告)日：2021-12-21

申请号：US16931771

申请日：2020-07-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Benjamin V. Fasano ,  Andreas D. Stricker ,  Hanyi Ding ,  Yusheng Bian ,  Bo Peng

IPC: G02B6/122 ,  G02B6/12

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including an optical medium for light signals; and an optical grating coupler coupled to the optical medium. The optical grating coupler is configured to reorient light from the optical medium. A cladding material is over the optical grating coupler. An absorber layer is over the cladding material, and vertically above the optical grating coupler.

公开(公告)号：US20210391425A1

公开(公告)日：2021-12-16

申请号：US16899086

申请日：2020-06-11

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Henry Aldridge ,  John J. Ellis-Monaghan ,  Michel J. Abou-Khalil

IPC: H01L29/10 ,  H01L29/08 ,  H01L21/8238 ,  H01L27/092

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure is formed over a channel region of a substrate. A first source/drain region is positioned in the substrate adjacent to a first sidewall of the gate structure, a second source/drain region is positioned in the substrate adjacent to a second sidewall of the gate structure, and an extension region is positioned in the substrate. The extension region includes first and second sections that each overlap with the first source/drain region. The first and second sections of the extension region are spaced apart along a longitudinal axis of the gate structure. A portion of the channel region is positioned along the longitudinal axis of the gate structure between the first and second sections of the extension region.

公开(公告)号：US20210384297A1

公开(公告)日：2021-12-09

申请号：US16893855

申请日：2020-06-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Henry L. ALDRIDGE, JR. ,  Anthony K. STAMPER ,  Jeonghyun HWANG ,  Johnatan A. KANTAROVSKY

IPC: H01L29/08 ,  H01L29/737 ,  H01L29/417 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a first semiconductor layer including a device region; a second semiconductor layer under the first semiconductor layer; a layer of conductive material between the first semiconductor layer and the second semiconductor layer; at least one contact extending to and contacting the layer of conductive material; and a device in the device region above the layer of conductive material.

公开(公告)号：US20210376180A1

公开(公告)日：2021-12-02

申请号：US16887375

申请日：2020-05-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN ,  Mark D. LEVY ,  Vibhor JAIN ,  Andre STURM

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/0312 ,  H01L31/028 ,  H01L31/036

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.

公开(公告)号：US20210375788A1

公开(公告)日：2021-12-02

申请号：US17400847

申请日：2021-08-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Nicholas A. Polomoff ,  Jae Kyu Cho ,  Mohamed A. Rabie ,  Andreas D. Stricker

IPC: H01L23/00 ,  H01L23/522 ,  H01L31/02 ,  H01L33/62

Abstract: Structures for an optical fiber groove and methods of forming a structure for an optical fiber groove. A photonics chip includes a substrate and an interconnect structure over the substrate. The photonics chip has a first exterior corner, a second exterior corner, and a side edge extending from the first exterior corner to the second exterior corner. The substrate includes a groove positioned along the side edge between the first exterior corner and the second exterior corner. The groove is arranged to intersect the side edge at a groove corner, and the interconnect structure includes metal structures adjacent to the first groove corner. The metal structures extend diagonally in the interconnect structure relative to the side edge of the photonics chip.

公开(公告)号：US11187852B1

公开(公告)日：2021-11-30

申请号：US17160710

申请日：2021-01-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Domingo Ferrer ,  Roderick A. Augur ,  Michal Rakowski

IPC: G02B6/02 ,  G02B6/293 ,  G02B6/34 ,  G02B6/028 ,  G02B6/36

Abstract: Structures that include a Bragg grating and methods of fabricating a structure that includes a Bragg grating. The structure includes a waveguide core and a Bragg grating having a plurality of segments positioned with a spaced arrangement adjacent to the waveguide core. Each segment includes one or more exterior surfaces. The structure further includes a silicide layer located on the one or more exterior surfaces of each segment.

公开(公告)号：US11183514B2

公开(公告)日：2021-11-23

申请号：US16561956

申请日：2019-09-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Anthony K. Stamper ,  Steven M. Shank ,  Siva P. Adusumilli ,  Michel J. Abou-Khalil

IPC: H01L27/092 ,  H01L27/12 ,  H01L27/02 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L29/40 ,  H01L21/762 ,  H01L21/311 ,  H01L21/02 ,  H01L21/84 ,  H01L21/3065 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.

公开(公告)号：US11181693B1

公开(公告)日：2021-11-23

申请号：US17076326

申请日：2020-10-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/26 ,  G02B6/28

Abstract: Structures for a directional coupler and methods of fabricating a structure for a directional coupler. A first waveguide core has a first section, a second waveguide core has a second section laterally adjacent to the first section, a third waveguide core has a first taper, a second taper, and a third section longitudinally positioned between the first taper and the second taper, and a fourth waveguide core has a first taper, a second taper, and a fourth section longitudinally positioned between the first taper and the second taper. The fourth section is laterally adjacent to the third section, and the third section and the fourth section are positioned either over or under the first section and the second section.

公开(公告)号：US20210356684A1

公开(公告)日：2021-11-18

申请号：US15930876

申请日：2020-05-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Zhuojie Wu ,  Bo Peng

IPC: G02B6/42 ,  G02B6/293 ,  G02B6/43 ,  G01J3/18

Abstract: Structures for a photonics chip, testing methods for a photonics chip, and methods of forming a structure for a photonics chip. A photonics chip includes a first waveguide, a second waveguide, an optical tap coupling the first waveguide to the second waveguide, and a photodetector coupled to the second waveguide. A laser is attached to the photonics chip. The laser is configured to generate laser light directed by the first waveguide to the optical tap.