Abstract:
The invention relates to a method of bit allocation in a scene change situation during encoding a video sequence. Following a scene change, the picture complexity of the current picture is adjusted so that the bit allocation for the next picture is more accurately estimated.
Abstract:
A semiconductor package includes a substrate, a stiffener ring coupled to the substrate and configured to form a well with the substrate, and a die positioned in the well. A thermal interface is positioned on the die. A heat spreader is coupled to the stiffener ring so that a portion of the heat spreader is positioned in the well and the thermal interface thermally couples the heat spreader to the die. The portion of the heat spreader positioned in the well adds rigidity to the semiconductor package and facilitates the use of thin dies.
Abstract:
The invention provides for the encoding of surround sound produced by any coincident microphone techniques with coincident-to-virtual microphone signal matrixing. An encoding scheme provides significantly lower computational demand, by deriving the spatial parameters and output downmixes from the coincident microphone array signals and the coincident-to-surround channel-coefficients matrix, instead of the multi-channel signals.
Abstract:
Vertical dithering is performed for vertical droop compensation in image processing using Linear Feedback Shift Registers (LFSRs). Line memories are not used. A compensation circuit includes a signature reload input signal coupled to the input of five LFSRs. Each LFSR includes a signature store. The output of each LFSR provides a sequence output signal that is gated with a corresponding enable signal in a first logic circuit. The output of all of the first logic circuits are combined in a second logic circuit to provide a control signal output.
Abstract:
A circuit includes an antenna terminal for generating a current through electromagnetic induction. The circuit also includes a rectifier for receiving the current and generating a rectified power supply voltage. In addition, the circuit includes a voltage clamp for sinking at least some of the current from the antenna terminal based on the rectified power supply voltage from the rectifier. The voltage clamp could include a control circuit (such as an N-channel transistor and a resistor) for controlling the sinking of at least some of the current from the antenna terminal. The voltage clamp could also include a sink circuit (such as an N-channel transistor) for sinking at least some of the current from the antenna terminal. The voltage clamp could further include a sink control circuit (such as a P-channel transistor and a resistor) for activating and deactivating the sink circuit based on operation of the control circuit.
Abstract:
A chip package includes a substrate, an integrated circuit proximate a top surface of the substrate, and a cap comprising encapsulant that encapsulates the integrated circuit on at least a portion of the top surface of the substrate. The chip package further includes at least one extension feature positioned on at least a portion of the top surface of the substrate. The at least one extension feature also comprises the encapsulant and extends from the cap to a perimeter of the substrate.
Abstract:
A method that includes forming a first layer having a first dopant concentration, the first layer having an integrated circuit region and a micro-electromechanical region and doping the micro-electromechanical region of the first layer to have a second dopant concentration is presented. The method includes forming a second layer having a third dopant concentration overlying the first layer, doping the second layer that overlies the micro-electromechanical region to have a fourth dopant concentration, forming a micro-electromechanical structure in the micro-electromechanical region using the first and second layers, and forming active components in the integrated circuit region using the second layer.
Abstract:
A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.
Abstract:
Systems and methods are disclosed for determining the perceptibility of noise in a block of images and/or video. The systems and methods may compute a mask value for the block using a block masking generator. The mask value may indicate the perceptibility of noise in the block. The mask value may be computed using a normalized activity value and/or a texture value for the block. The normalized activity value may indicate the relative activity in the block as compared to the activity in the image and/or video. The texture value may indicate the strength and/or number of edges in the block.
Abstract:
A method for integrating a bipolar injunction transistor in a semiconductor chip includes the steps of forming an intrinsic base region of a second type of conductivity extending in the collector region from a main surface through an intrinsic base window of the sacrificial insulating layer, forming an emitter region of the first type of conductivity extending in the intrinsic base region from the main surface through an emitter window of the sacrificial insulating layer, removing the sacrificial insulating layer, forming an intermediate insulating layer on the main surface, and forming an extrinsic base region of the second type of conductivity extending in the intrinsic base region from the main surface through an extrinsic base window of the intermediate insulating layer