公开(公告)号：US11094546B2

公开(公告)日：2021-08-17

申请号：US16517122

申请日：2019-07-19

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt de Roest

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  C23C16/06 ,  C23C16/455 ,  H01L21/48 ,  C23C16/04 ,  H01L21/321 ,  C23C16/02 ,  C23C16/08

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20210246095A1

公开(公告)日：2021-08-12

申请号：US17302276

申请日：2021-04-29

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C07C45/77 ,  C23C16/30 ,  C23C16/455

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

公开(公告)号：US20210239614A1

公开(公告)日：2021-08-05

申请号：US17157507

申请日：2021-01-25

Applicant: ASM IP Holding B.V.

Inventor： Shiva K.T. Rajavelu Muralidhar ,  Youness Alvandi-Tabrizi ,  John DiSanto ,  Sam Kim

IPC: G01N21/59

Abstract: Methods and apparatus for measuring light intensity are disclosed. The methods and apparatus can be used to verify an article, such as a reaction chamber. Exemplary apparatus include a first arm, a light source coupled to the first arm, a second arm, and a sensor coupled to the second arm. The sensor can receive light from the light source that is transmitted through at least a portion of the article.

公开(公告)号：US20210225622A1

公开(公告)日：2021-07-22

申请号：US17147827

申请日：2021-01-13

Applicant: ASM IP Holding B.V.

Inventor： Fumitaka Shoji

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: Examples of a substrate treatment apparatus include an output device configured to output a plasma-related signal which is a signal obtained in association with plasma treatment used for the substrate treatment, and a controller configured to monitor an integrated value of the plasma-related signal received directly or indirectly from the output device.

公开(公告)号：US11069510B2

公开(公告)日：2021-07-20

申请号：US16116708

申请日：2018-08-29

Applicant: ASM IP Holding B.V.

Inventor： Ki Chul Um ,  Hyun Soo Jang ,  Jeong Ho Lee ,  Yong Gyu Han

IPC: H01J37/32 ,  C23C16/509

Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

公开(公告)号：US20210207269A1

公开(公告)日：2021-07-08

申请号：US17136659

申请日：2020-12-29

Applicant: ASM IP Holding B.V.

Inventor： Jianqiu Huang ,  Gejian Zhao ,  Kyle Fondurulia

IPC: C23C16/455 ,  F16K7/14

Abstract: Gas supply assemblies and reactors systems including the gas supply assemblies are disclosed. An exemplary gas supply assembly includes a vessel, a valve plate, a housing encasing the vessel and the valve plate, a gas feedthrough having a first end interior of the housing and a second end exterior of the housing, and one or more valves attached to the valve plate, wherein at least one valve is fluidly coupled to an interior of the vessel. The assemblies can further include a removable gas line having a first end coupled to the at least one valve and a second end coupled to the gas feedthrough. Additionally or alternatively, a gas supply assembly can include one or more valve plate leveling devices coupled to the valve plate.

公开(公告)号：US11056344B2

公开(公告)日：2021-07-06

申请号：US15691241

申请日：2017-08-30

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Qi Xie

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02 ,  H01L21/28

Abstract: There is provided a method of forming a layer, comprising depositing a seed layer on the substrate and depositing a bulk layer on the seed layer. Depositing the seed layer comprises supplying a first precursor comprising metal and halogen atoms to the substrate; and supplying a first reactant to the substrate. Depositing the bulk layer comprises supplying a second precursor comprising metal and halogen atoms to the seed layer and supplying a second reactant to the seed layer.

公开(公告)号：US11047040B2

公开(公告)日：2021-06-29

申请号：US16594365

申请日：2019-10-07

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  C23C16/18 ,  C23C16/22

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US20210193515A1

公开(公告)日：2021-06-24

申请号：US17110709

申请日：2020-12-03

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Shinya Iwashita ,  Jan Willem Maes ,  Jiyeon Kim

IPC: H01L21/768 ,  H01L21/67 ,  C23C16/52 ,  C23C16/455 ,  C23C16/34 ,  C23C16/06 ,  C23C16/46

Abstract: Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.

公开(公告)号：US20210193458A1

公开(公告)日：2021-06-24

申请号：US17113441

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Leo Salmi ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L21/762

Abstract: A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.