公开(公告)号：US10236292B1

公开(公告)日：2019-03-19

申请号：US16156082

申请日：2018-10-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Julien Frougier ,  Ruilong Xie ,  Puneet H. Suvarna ,  Hiroaki Niimi ,  Steven J. Bentley ,  Ali Razavieh

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/285 ,  H01L21/768 ,  H01L29/45 ,  H01L29/786

Abstract: The present disclosure relates generally to wrap around contact formation in source/drain regions of a semiconductor device such as an integrated circuit (IC), and more particularly, to stacked IC structures containing complementary FETs (CFETs) having wrap around contacts and methods of forming the same. Disclosed is a stacked IC structure including a first FET on a substrate, a second FET vertically stacked above the first FET, a dielectric layer above the second FET, and a spacer layer between FETs, wherein each FET has an electrically isolated wrap-around contact formed therearound.

公开(公告)号：US10236291B2

公开(公告)日：2019-03-19

申请号：US15801023

申请日：2017-11-01

Applicant: GLOBALFOUNDRIES INC.

Inventor： Min Gyu Sung ,  Chanro Park ,  Hoon Kim ,  Ruilong Xie ,  Kwan-Yong Lim

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/32 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/78

Abstract: At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) having an oxide level in a fin array region within a predetermined height of the oxide level of a field region. A first oxide process is performed for controlling a first oxide recess level in a field region adjacent to a fin array region comprising a plurality of fins in a finFET device. The first oxide process comprises depositing an oxide layer over the field region and the fin array region and performing an oxide recess process to bring the oxide layer to the first oxide recess level in the field region. A second oxide process is performed for controlling a second oxide recess level in the fin array region. The second oxide process comprises isolating the fin array region, depositing oxide material, and performing an oxide recess process to bring the oxide level in the fin array region to the second oxide recess level. The first oxide recess level is within a predetermined height differential of the second oxide recess level.

公开(公告)号：US20190081175A1

公开(公告)日：2019-03-14

申请号：US15702278

申请日：2017-09-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xusheng Wu ,  Hong Yu

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: At least one method, apparatus and system disclosed herein involves forming a sigma shaped source/drain lattice. A fin is formed on a semiconductor substrate. A gate region is formed over the fin. In a source region and a drain region adjacent bottom portions of the fin, a first recess cavity is formed in the source region, and a second recess cavity is formed in the drain region. The first and second recess cavities comprise sidewalls formed in an angle relative to a vertical axis. Portions of the first and second recess cavities extend below the fin. In the first recess cavity, a first rare earth oxide layer is formed, and in the second recess cavity, a second rare earth oxide layer is formed.

公开(公告)号：US20190081145A1

公开(公告)日：2019-03-14

申请号：US15701678

申请日：2017-09-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Christopher M. Prindle ,  Nigel G. Cave ,  Mark V. Raymond

IPC: H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66

Abstract: A structure and method for forming sets of contact structures to source/drain regions of complimentary N-type field effect transistors (NFETs) and P-type field effect transistors (PFETs). The structure including a NFET structure including a first fin positioned on a substrate and a PFET structure including a second fin positioned on the substrate, wherein a source/drain region (S/D) of the first fin and a S/D of the second fin include non-uniform openings at an uppermost surface. A method of forming non-uniformly openings in the S/Ds of the complimentary NFETs and PFETs including forming mask on the PFET to protect the structure during formation of openings in the NFET S/D. A method of forming non-uniform openings in the S/D of the complimentary NFETs and PFETs including reducing the epitaxially growth of the NFET S/D to form an opening therein.

公开(公告)号：US20190074364A1

公开(公告)日：2019-03-07

申请号：US15693537

申请日：2017-09-01

Applicant: GLOBALFOUNDRIES INC.

Inventor： Laura J. Schutz ,  Anthony K. Stamper ,  Siva P. Adusumilli ,  Joshua F. Dillon

IPC: H01L29/49 ,  H01L29/417 ,  H01L29/423 ,  H01L21/8234 ,  H01L21/3205 ,  H01L29/66

CPC classification number: H01L29/4991 ,  H01L21/28052 ,  H01L21/28097 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/41758 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/4975 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/66575

Abstract: A method may include forming a transistor on a substrate, the transistor including a gate, and forming a sacrificial spacer extending along an entirety of a thickness of the gate. A via layer is then formed over/about the gate. The sacrificial spacer is at least partially removed, leaving an air vent opening. An airgap spacer is formed in the dielectric layer by depositing another dielectric layer to close off the air vent opening. The airgap spacer is coincident with at least one sidewall of the gate and extends along an entirety of a thickness of the gate. Gate airgaps may also be provided over the gate. Other embodiments extend the gate and airgap spacer the full thickness of the dielectric layer thereabout. Other embodiments extend the airgap spacer over the gate.

公开(公告)号：US10224396B1

公开(公告)日：2019-03-05

申请号：US15817629

申请日：2017-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Steven M. Shank ,  Daisy Vaughn ,  Thai Doan

IPC: H01L29/00 ,  H01L29/06 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to deep trench isolation structures and methods of manufacture. The structure includes: at least one gate structure on a substrate; an interlevel dielectric material above the substrate; and a trench isolation structure extending into the substrate adjacent to the at least one gate structure and terminating in the interlevel dielectric material above the substrate.

公开(公告)号：US10224342B2

公开(公告)日：2019-03-05

申请号：US15644968

申请日：2017-07-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Juergen Faul

IPC: H01L27/12 ,  H01L29/93 ,  H01L21/84 ,  H01L29/786 ,  H01L27/11582 ,  H01L49/02

Abstract: A semiconductor device includes an SOI substrate having a base substrate material, an active semiconductor layer positioned above the base substrate material and a buried insulating material layer positioned between the base substrate material and the active semiconductor layer. A gate structure is positioned above the active semiconductor layer and a back gate region is positioned in the base substrate material below the gate structure and below the buried insulating material layer. An isolation region electrically insulates the back gate region from the surrounding base substrate material, wherein the isolation region includes a plurality of implanted well regions that laterally contact and laterally enclose the back gate region and an implanted isolation layer that is formed below the back gate region.

公开(公告)号：US10224284B1

公开(公告)日：2019-03-05

申请号：US15863113

申请日：2018-01-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christian A. Witt

IPC: H01L23/532 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a soluble self-aligned barrier first for interconnect structure and methods of manufacture. The structure includes: a self-aligning barrier layer lining a trench of an interconnect structure; and an alloy interconnect material over the self-aligned barrier layer. The alloy interconnect material is an alloy composed of metal interconnect material and pre-anneal material that also forms the self-aligning barrier layer.

公开(公告)号：US10224262B2

公开(公告)日：2019-03-05

申请号：US15593969

申请日：2017-05-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kathryn C. Rivera ,  Janak G. Patel ,  David Stone ,  Samantha Donovan

IPC: H01L23/36 ,  H01L23/367 ,  H01L23/552 ,  H01L23/00

Abstract: Heat spreader lids and package assemblies including a heat spreader lid. The heat spreader lid has a central region configured to be coupled with an electronic component, a peripheral region configured to be coupled with a substrate, and a connecting region arranged between the central region and the peripheral region. The connecting region is configured to impart stress relief to the central region.

公开(公告)号：US20190067905A1

公开(公告)日：2019-02-28

申请号：US15692136

申请日：2017-08-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： John J. Ellis-Monaghan ,  Sebastian Ventrone ,  Vibhor Jain ,  Yves Ngu

IPC: H01S5/062 ,  H01S5/00 ,  H01S5/022 ,  H01S5/026 ,  H01S5/183 ,  H01S5/223 ,  H01S5/22

Abstract: Structures for integrated lasers, systems including integrated lasers, and associated fabrication methods. A ring waveguide and a seed region are arranged interior of the ring waveguide. A laser strip extends across a portion of the ring waveguide. The laser strip has an end contacting the seed region and another opposing end. The laser strip includes a laser medium and a p-n junction capable of generating electromagnetic radiation. The p-n junction of the laser strip is aligned with a portion of the ring waveguide.