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    Preparation of nanosized copper (I) compounds
    271.
    发明授权
    Preparation of nanosized copper (I) compounds 失效
    纳米尺寸铜（I）化合物的制备

    公开(公告)号：US07700796B2

    公开(公告)日：2010-04-20

    申请号：US10413754

    申请日：2003-04-16

    Applicant: Kenrick M. Lewis ,  Chi-Lin O'Young

    Inventor： Kenrick M. Lewis ,  Chi-Lin O'Young

    IPC: C01G3/05

    CPC classification number: B82Y30/00 ,  C01C3/08 ,  C01C3/11 ,  C01G3/00 ,  C01G3/04 ,  C01G3/05 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/82 ,  C01P2004/62 ,  C01P2004/64 ,  Y10S977/773 ,  Y10S977/81

    Abstract: A method of making nanosized copper (I) compounds, in particular, copper (I) halides, pseudohalides, and cyanocuprate complexes, in reverse micelles or microemulsions is disclosed herein. The method of the invention comprises (a) dissolving a copper (II) compound in the polar phase of a first reverse micelle or microemulsion, (b) dissolving a copper (II) to copper (I) reducing agent or a pseudohalide salt in the polar phase of a second sample of the same reverse micelle or microemulsion, (c) mixing the two reverse micelle/microemulsions samples to form nanometer sized copper (I) compounds and (d) recovering said nanometer sized copper (I) compounds. The present invention is also directed to the resultant nanosized copper (I) compounds, such as copper (I) chloride, copper (I) cyanide, and potassium cyanocuprate complexes having an average particle size of about 0.1 to 600 nanometers.

    Abstract translation: 本文公开了一种在反胶束或微乳液中制备纳米尺寸铜（I）化合物，特别是卤化铜（I），拟卤化物和氰基偶联物络合物的方法。 本发明的方法包括（a）将铜（II）化合物溶解在第一反胶束或微乳液的极性相中，（b）将铜（II）溶解在铜（I）还原剂或拟卤化物盐中， 相同反胶束或微乳液的第二样品的极性相，（c）混合两个反胶束/微乳液样品以形成纳米尺寸的铜（I）化合物和（d）回收所述纳米尺寸的铜（I）化合物。 本发明还涉及所得到的纳米尺度铜（I）化合物，例如氯化铜（I），氰化铜（I）和平均粒度约为0.1至600纳米的氰基钴酸钾配合物。

    WAFER PROCESSING APPARATUS HAVING A TUNABLE ELECTRICAL RESISTIVITY
    272.
    发明申请
    WAFER PROCESSING APPARATUS HAVING A TUNABLE ELECTRICAL RESISTIVITY 有权
    具有可调节电阻率的加工装置

    公开(公告)号：US20100053841A1

    公开(公告)日：2010-03-04

    申请号：US12204079

    申请日：2008-09-04

    Applicant: David Michael Rusinko, JR. ,  Marc Schaepkens ,  Wanxue Zeng

    Inventor： David Michael Rusinko, JR. ,  Marc Schaepkens ,  Wanxue Zeng

    IPC: H01L21/683

    CPC classification number: H01L21/683 ,  H01L21/6831 ,  H01L21/6833

    Abstract: An article with an etch resistant coating is disclosed. The article is a heating element, wafer carrier, or electrostatic chuck. The article has a base substrate made of a ceramic or other material, and further has one or more electrodes for resistance heating or electromagnetic chucking or both. The eth resistant coating has a plurality of regions made from materials having different electrical volume resistivities, such that the overall coating has a bulk resistivity that can be tailored by varying the relative size of each region.

    Abstract translation: 公开了具有耐蚀刻涂层的物品。 该物品是加热元件，晶片载体或静电卡盘。 该制品具有由陶瓷或其他材料制成的基底，并且还具有用于电阻加热或电磁夹持的两个或更多个电极。 耐腐蚀涂层具有由具有不同电体积电阻率的材料制成的多个区域，使得整个涂层具有可以通过改变每个区域的相对尺寸来调整的体电阻率。

    Resonant cavity light emitting devices and associated method
    274.
    发明授权
    Resonant cavity light emitting devices and associated method 失效
    谐振腔发光器件及相关方法

    公开(公告)号：US07582498B2

    公开(公告)日：2009-09-01

    申请号：US11295627

    申请日：2005-12-06

    Applicant: Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    Inventor： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

    IPC: H01L21/00 ,  C30B15/00

    CPC classification number: H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

    Abstract: A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

    Abstract translation: 一种方法可以产生谐振腔发光器件。 种子氮化镓晶体和含氮过热流体中的源材料可以提供用于其间的氮化镓前体的质量传输的介质。 可以通过在种子氮化镓晶体和源材料之间施加第一热分布来制备晶种表面。 可以通过在种子氮化镓晶体和源材料之间施加第二热分布而在种子氮化镓晶体的制备表面上生长氮化镓材料，而种子氮化镓晶体和源材料在含氮过热流体 。 可以在单晶氮化镓衬底上沉积III族氮化物层的堆叠。 堆叠可以包括第一镜子子堆叠和适于制造成一个或多个谐振腔发光器件的有源区域。

    MIXTURES OF HYDROLYSIS RESISTANT ORGANOMODIFIED TRISILOXANE IONIC SURFACTANTS
    275.
    发明申请
    MIXTURES OF HYDROLYSIS RESISTANT ORGANOMODIFIED TRISILOXANE IONIC SURFACTANTS 审中-公开
    耐水溶性有机硅氧烷离子表面活性剂的混合物

    公开(公告)号：US20090173912A1

    公开(公告)日：2009-07-09

    申请号：US11964167

    申请日：2007-12-26

    Applicant: Mark D. Leatherman ,  George A. Policello ,  Wenqing N. Peng ,  Liping Zheng ,  Roland Wagner ,  Suresh K. Rajaraman ,  Zijun Xia

    Inventor： Mark D. Leatherman ,  George A. Policello ,  Wenqing N. Peng ,  Liping Zheng ,  Roland Wagner ,  Suresh K. Rajaraman ,  Zijun Xia

    IPC: C09K3/00

    CPC classification number: A01N25/30 ,  B01F17/0071 ,  C11D3/3738

    Abstract: The present invention provides for a mixture comprising a siloxane having the formula: M1DM2 wherein M1=(R1)(R2)(R3)SiO1/2; M2=(R4)(R5)(R6)SiO1/2 and D=(R7)(Z)SiO2/2 where R1, R2, R3 R4, R5, R6 and R7 are each independently selected from the group consisting of 1 to 4 carbon monovalent hydrocarbon radicals, aryl, and a hydrocarbon group of 4 to 9 carbons containing an aryl group; Z is a pendant hydrophilic ionic group selected from the group consisting of R8-RA, R9-RC, and R10-RZ; RA being an anionic substituent, RC a cationic substituent or RZ a zwitterionic substituent on the D group and an additional component selected from the group consisting of agricultural components, coating components, personal care components, home care components, oil or gas treating components, water processing components, and pulp or paper treating components, wherein said mixture has an enhanced resistance to hydrolysis.

    Abstract translation: 本发明提供了一种包含具有下式的硅氧烷的混合物：<？in-line-formula description =“In-Line Formulas”end =“lead”？> M1DM2 <？in-line-formula description =“In-line 公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？>其中<？in-line-formula description =”In-line Formulas“end =” 尾部“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> M1 =（R1）（R2）（R3）SiO1 / 2; “直线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> M2 =（R4）（R5）（R6）SiO1 / 2和 <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> D =（R7） Z）SiO 2/2 <？在线公式描述=“在线公式”end =“tail”？>其中R1，R2，R3 R4，R5，R6和R7各自独立地选自1 至4碳一价烃基，芳基和含有芳基gr的4至9个碳的烃基 对了 Z是选自R8-RA，R9-RC和R10-RZ的侧链亲水离子基团; RA为阴离子取代基，RC为阳离子取代基或RZ为D基团上的两性离子取代基，另外的组分选自农业组分，涂料组分，个人护理组分，家庭护理组分，油或气体处理组分，水 处理组分和纸浆或纸处理组分，其中所述混合物具有增强的抗水解性。

    Process for preparing rubber compositions and articles made therefrom
    279.
    发明申请
    Process for preparing rubber compositions and articles made therefrom 有权
    制备橡胶组合物和制品的方法

    公开(公告)号：US20080306213A1

    公开(公告)日：2008-12-11

    申请号：US11810300

    申请日：2007-06-05

    Applicant: Ping Jiang ,  Robert James Perry

    Inventor： Ping Jiang ,  Robert James Perry

    IPC: C08L83/00 ,  C08L47/00

    CPC classification number: C08K5/31 ,  C08K5/548 ,  C08L21/00

    Abstract: A process for preparing a rubber composition comprises: (a) forming a mixture of: (i) at least one thiocarboxyl-functional hydrolyzable silane, (ii) at least one rubber containing carbon-carbon double bonds, (iii) at least one silane-reactive filler, (iv) at least one activating agent, and (v) water; (b) mixing the composition formed in step (a) under reactive-mechanical-working conditions and in the absence of vulcanizing agent(s); (c) adding at least one vulcanizing agent (vi) to the composition of step (b); (d) mixing the composition of step (c) under non-reactive-mechanical-working conditions; and, (e) optionally, curing the rubber composition of step (d).

    Abstract translation: 制备橡胶组合物的方法包括：（a）形成以下混合物：（i）至少一种硫代羧基官能的可水解硅烷，（ii）至少一种含有碳 - 碳双键的橡胶，（iii）至少一种硅烷 反应性填料，（iv）至少一种活化剂，和（v）水; （b）在反应 - 机械 - 加工条件下和在不存在硫化剂的情况下将步骤（a）中形成的组合物混合; （c）向步骤（b）的组合物中加入至少一种硫化剂（vi）; （d）在非反应性 - 机械加工条件下混合步骤（c）的组合物; 和（e）任选地固化步骤（d）的橡胶组合物。

    Etch resistant wafer processing apparatus and method for producing the same
    280.
    发明授权
    Etch resistant wafer processing apparatus and method for producing the same 失效
    耐蚀刻晶片处理装置及其制造方法

    公开(公告)号：US07446284B2

    公开(公告)日：2008-11-04

    申请号：US11322809

    申请日：2005-12-30

    Applicant: Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

    Inventor： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

    IPC: H05B3/68 ,  H01L23/58

    CPC classification number: H01L21/68757 ,  H01L21/67011 ,  H01L21/67103 ,  Y10S269/903 ,  Y10T279/23

    Abstract: A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

    Abstract translation: 通过将膜电极沉积在基底表面上来制造晶片处理装置，然后用包括氮化物，碳化物，碳氮化物或氮氧化物中的至少一种的保护涂膜层进行外涂，所述元素选自： B，Al，Si，Ga，难熔硬金属，过渡金属及其组合。 膜电极具有与下层基底层的CTE以及保护涂层的CTE密切匹配的热膨胀系数（CTE）。

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