Dual voltage switched branch LNA architecture

    公开(公告)号:US11831280B2

    公开(公告)日:2023-11-28

    申请号:US18168346

    申请日:2023-02-13

    申请人: pSemi Corporation

    IPC分类号: H03F1/22 H03F3/193 H03F3/21

    摘要: Methods and circuital arrangements for turning OFF branches of a multi-branch cascode amplifier are presented. First and second switching arrangements coupled to a branch allow turning OFF the branch while protecting transistors of the branch from a supply voltage that may be greater than a tolerable voltage of the transistors. The first switching arrangement includes a transistor-based switch that is in series connection with the transistors of the branch. The first switching arrangement drops the supply voltage during the OFF state of the branch and provides a conduction path for a current through the branch during the ON state of the branch. A resistor and a shunting switch are coupled to a gate of the transistor-based switch to reduce parasitic coupling effects of the transistor-based switch upon an RF signal coupled to the branch during the ON state and OFF state of the branch.

    Bicycle gearshift
    22.
    发明授权

    公开(公告)号:US11760438B2

    公开(公告)日:2023-09-19

    申请号:US17534927

    申请日:2021-11-24

    申请人: CAMPAGNOLO S.r.l.

    IPC分类号: B62M9/1248

    CPC分类号: B62M9/1248

    摘要: A bicycle gearshift including a first body associated with a bicycle frame, a second body connected to, and moveable relative to, the first body, a rocker arm rotatably connected to the second body at a rotation axis, and a shaft extending coaxially to this axis and fixedly associated with the rocker arm. A unidirectional rotation device is arranged between the shaft and second body to allow rotation of the shaft relative to the second body only in a first rotation direction. An elastic element is associated with the second body and the rocker arm to push the rocker arm in rotation about the axis in the first rotation direction. A damping device is arranged between the shaft and unidirectional rotation device to generate a friction force when the rocker arm is rotated in a second, opposite rotation direction, and has a friction surface in contact with the unidirectional rotation device.

    High-voltage transmission gate architecture

    公开(公告)号:US11742848B1

    公开(公告)日:2023-08-29

    申请号:US17673372

    申请日:2022-02-16

    申请人: pSemi Corporation

    IPC分类号: H03K17/567 H03K17/00

    CPC分类号: H03K17/567 H03K17/005

    摘要: Circuits and methods for transmitting high-voltage (HV) static and/or switching signals via a high-voltage (HV) transmission gate controllable via low-voltage (LV) logic are presented. The HV gate includes a biasing circuit for generating a biasing voltage to gates of two series-connected HV transistors. According to one aspect, the biasing voltage is generated through a pull-up device coupled to a HV supply having a voltage level higher than a high voltage of a signal to be transmitted. According to another aspect, the biasing voltage is generated through a LV supply coupled to a diode, and a capacitor coupled between the gates and the sources of the HV transistors. When the gate is activated, the combination of the LV supply coupled to the diode and the capacitor generates a biasing voltage based on a sum of a voltage of the LV supply and an instantaneous voltage level of the signal being transmitted.

    Bias techniques for amplifiers with mixed polarity transistor stacks

    公开(公告)号:US11689161B2

    公开(公告)日:2023-06-27

    申请号:US17486810

    申请日:2021-09-27

    申请人: pSemi Corporation

    发明人: John Birkbeck

    IPC分类号: H03F1/22 H03F3/45 H03F3/193

    摘要: Various methods and circuital arrangements for biasing gates of stacked transistor amplifier that includes two series connected transistor stacks of different polarities are presented, where the amplifier is configured to operate according to different modes of operation. Such circuital arrangements operate in a closed loop with a feedback error voltage that is based on a sensed voltage at a common node of the two series connected transistor stacks. According to one aspect, gate biasing voltages to input transistors of each of the two series connected stacks are adjusted by respective current mirrors that are controlled based on the feedback error voltage. According to another aspect, other gate biasing voltages are generated by maintaining a fixed gate biasing voltage between any two consecutive gate basing voltages.

    DC plasma control for electron enhanced material processing

    公开(公告)号:US11676797B2

    公开(公告)日:2023-06-13

    申请号:US17946434

    申请日:2022-09-16

    申请人: VELVETCH LLC

    IPC分类号: H01J37/32

    摘要: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

    Process for applying noise-reducing elements to a tyre for vehicle wheels

    公开(公告)号:US11639079B2

    公开(公告)日:2023-05-02

    申请号:US17878829

    申请日:2022-08-01

    IPC分类号: B60C19/00 B29D30/00

    摘要: A process for applying noise-reducing elements to a tyre for vehicle wheels. A plurality of noise-reducing elements are arranged on a feeding belt movable along a predetermined feeding direction. The noise-reducing elements are subsequently aligned along the feeding direction and brought into mutual contact, to then be transferred onto a service plane arranged downstream of the feeding belt along the feeding direction and having, on an upper surface thereof, a continuous film which supports a layer of adhesive material. The layer of adhesive material is applied onto a lower surface of each of the noise-reducing elements taking it from the continuous film. The noise-reducing elements are then transferred one by one onto a conveyor belt arranged downstream of the service plane along the feeding direction. The noise-reducing elements are finally positioned one by one on a radially inner surface of a tyre.