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    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    23.
    发明申请
    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    透明非易失性存储器薄膜晶体管及其制造方法

    公开(公告)号：US20100243994A1

    公开(公告)日：2010-09-30

    申请号：US12555986

    申请日：2009-09-09

    申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

    CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    INFRARED SENSOR AND METHOD OF FABRICATING THE SAME
    25.
    发明申请
    INFRARED SENSOR AND METHOD OF FABRICATING THE SAME 失效
    红外传感器及其制造方法

    公开(公告)号：US20100155601A1

    公开(公告)日：2010-06-24

    申请号：US12511251

    申请日：2009-07-29

    申请人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： H01L27/14 ,  B05D5/12 ,  H01L21/00

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/10 ,  H01L31/022408 ,  H01L31/108

    摘要： An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.

    摘要翻译： 提供了一种红外线传感器及其制造方法。 该传感器包括：基板，包括反射层和多个焊盘电极;连接到焊盘电极并形成为与反射层隔开预定距离的叉指感测电极，以及形成在感测电极上的感测层， 连接到一个焊盘区域的感测电极的交错区域与连接到另一个焊盘电极的感测电极分离的部分露出。 因此，传感器具有非常简单的结构的电极和分为矩形块的感测层，从而可以去除不均匀地流入电极的电流。 因此，可以实现感测层的电流可以均匀地流动并且噪声降低的传感器。

    PROGRAMMABLE LOGIC BLOCK OF FPGA USING PHASE-CHANGE MEMORY DEVICE
    26.
    发明申请
    PROGRAMMABLE LOGIC BLOCK OF FPGA USING PHASE-CHANGE MEMORY DEVICE 有权
    使用相变存储器件的FPGA的可编程逻辑块

    公开(公告)号：US20100148821A1

    公开(公告)日：2010-06-17

    申请号：US12633731

    申请日：2009-12-08

    申请人： Byoung Gon YU ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    发明人： Byoung Gon YU ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    IPC分类号： H03K19/177 ,  H03K19/0948

    CPC分类号： H03K19/17784 ,  H03K19/17728 ,  H03K19/17792

    摘要： Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.

    摘要翻译： 提供了现场可编程门阵列（FPGA）的可编程逻辑块。 可编程逻辑块包括连接到电源的上拉访问晶体管，连接到上拉存取晶体管的上变相存储器件，连接到上变相存储晶体管的下变相存储器件 存储器件，上变相存储器件和下变相存储器件之间的输出端子以及连接到下变相存储器件和地的下拉存取晶体管。 上变相存储器件和下变相存储器件的电阻值被单独编程。

    BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL
    27.
    发明申请
    BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL 审中-公开
    透镜结构，使用红外线检测像素的BOLOMETER结构，以及制作红外检测像素的方法

    公开(公告)号：US20100148067A1

    公开(公告)日：2010-06-17

    申请号：US12507372

    申请日：2009-07-22

    申请人： Sang Hoon CHEON ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Hoon CHEON ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01J5/00 ,  C23F1/00

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/022 ,  G01J5/024

    摘要： Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel.The infrared detection pixel includes a substrate including a read-out integrated circuit (ROIC) and on which a reflection layer for reflecting infrared light is stacked, a bolometer structure formed to be spaced apart from the substrate and including a temperature-sensitive resistive layer, a first metal layer formed in a pattern on one surface of the temperature-sensitive resistive layer, a second metal layer formed in a pattern complementary to the pattern of the first metal layer on the other surface of the temperature-sensitive resistive layer in order to complementarily absorb infrared light, and an insulating layer formed between the temperature-sensitive resistive layer and the first metal layer, and a metal pad receiving a change in resistance of the temperature-sensitive resistive layer according to infrared light absorbed by the first metal layer and the second metal layer from the second metal layer, and transferring the change in resistance to the ROIC.Thus, it is possible to improve responsivity, and implement a simple bolometer structure robust against stress. Consequently, process yield can be improved, and the volume, weight, price, etc., of application products can be reduced by reducing the volume of a bolometer structure.

    摘要翻译： 提供了一种测辐射热计结构，采用测辐射热计结构的红外检测像素，以及制造红外检测像素的方法。 红外线检测像素包括：基板，包括读出集成电路（ROIC），层叠用于反射红外光的反射层，形成为与基板间隔开并包括温度敏感电阻层的测辐射热计结构， 在温度敏感电阻层的一个表面上以图案形成的第一金属层，第二金属层，以与第一金属层的图案互补的图案形成在第一金属层的图案上，以在该温度敏感电阻层的另一个表面上，以便 互补吸收红外光，以及形成在所述耐温电阻层和所述第一金属层之间的绝缘层，以及金属焊盘，所述金属焊盘根据由所述第一金属层吸收的红外光接收所述耐温电阻层的电阻变化，以及 来自第二金属层的第二金属层，并且传递对ROIC的电阻变化。 因此，可以提高响应度，并且实现对应力的鲁棒的简单的测辐射热计结构。 因此，可以提高工艺产量，并且可以通过减小测辐射热计结构的体积来减少应用产品的体积，重量，价格等。

    HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME
    28.
    发明申请
    HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME 失效
    高灵敏度Z轴振动传感器及其制造方法

    公开(公告)号：US20100132467A1

    公开(公告)日：2010-06-03

    申请号：US12509360

    申请日：2009-07-24

    申请人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01P15/125 ,  H01L21/306

    CPC分类号： G01P15/0802 ,  G01H11/06 ,  G01P1/023 ,  G01P15/125 ,  H04R19/005

    摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

    摘要翻译： 提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为 掺杂多晶硅层由于z轴振动而移动。 特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱 频率如地震波。 因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波 和低振动速度。 此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。

    APPARATUS FOR DRIVING ARTIFICIAL RETINA USING MEDIUM-RANGE WIRELESS POWER TRANSMISSION TECHNIQUE
    29.
    发明申请
    APPARATUS FOR DRIVING ARTIFICIAL RETINA USING MEDIUM-RANGE WIRELESS POWER TRANSMISSION TECHNIQUE 审中-公开
    使用中等无线电力传输技术驱动人为故障的设备

    公开(公告)号：US20100094381A1

    公开(公告)日：2010-04-15

    申请号：US12477908

    申请日：2009-06-04

    申请人： Yong Hae KIM ,  Seung Youl KANG ,  Byoung Gon YU

    发明人： Yong Hae KIM ,  Seung Youl KANG ,  Byoung Gon YU

    IPC分类号： A61F9/08 ,  A61F2/14 ,  A61N1/36

    CPC分类号： A61N1/0543 ,  A61N1/36046 ,  A61N1/37229 ,  A61N1/3787

    摘要： Provided is an apparatus for driving an artificial retina using a medium-range power transmission technique. The apparatus can wirelessly transmit power to an artificial retina circuit within a medium range of about 1 m using resonance between a first coil equipped around a user's waist and a second coil implanted in a user's eye. Thus, it is possible to solve the difficulty of implanting a coil in a lens, provide convenience to a user by eliminating the necessity of artificial glasses, and stably supply power to the artificial retina circuit. In addition, it is possible to remarkably lessen the difficulty in connecting the second coil with the artificial retina circuit in an eye.

    摘要翻译： 提供了一种使用中程电力传输技术来驱动人造视网膜的装置。 该装置可以使用围绕用户腰围的第一线圈与植入用户眼睛的第二线圈之间的共振，将功率无线地传输到大约1m的中等范围内的人造视网膜电路。 因此，可以解决在镜片中植入线圈的困难，通过消除人造眼镜的需要，并且稳定地向人造视网膜电路供电，为用户提供便利。 此外，可以显着地减轻在眼睛中将第二线圈与人造视网膜电路连接的难度。