公开(公告)号：US09395209B2

公开(公告)日：2016-07-19

申请号：US14552326

申请日：2014-11-24

申请人： Crocus Technology Inc.

发明人： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay ,  Barry Hoberman

IPC分类号： G01D5/12 ,  G01B7/30 ,  G01R33/09 ,  G01C17/02 ,  G01D5/16 ,  G01R33/00

CPC分类号： G01D5/12 ,  G01B7/30 ,  G01C17/02 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

公开(公告)号：US09331268B2

公开(公告)日：2016-05-03

申请号：US14405918

申请日：2013-06-07

申请人： CROCUS Technology SA

发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Clarisse Ducruet ,  Lucien Lombard

IPC分类号： H01L29/82 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/02

摘要： A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.

摘要翻译： 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。

公开(公告)号：US20150357014A1

公开(公告)日：2015-12-10

申请号：US14762264

申请日：2014-01-16

申请人： CROCUS TECHNOLOGY SA

发明人： Ioan Lucian Prejbeanu ,  Jerome Moritz ,  Bernard Dieny

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  G11C2211/5615 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

摘要翻译： MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。

公开(公告)号：US20150214952A1

公开(公告)日：2015-07-30

申请号：US14606960

申请日：2015-01-27

申请人： Crocus Technology Inc.

发明人： Douglas J. Lee ,  Yaron Oren-Pines ,  Seyed A. Tabatabaei ,  Stuart Desmond Rumley ,  Bertrand F. Cambou

IPC分类号： H03K19/18

CPC分类号： H03K19/18 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on an analog input to the circuit. Each MTJ is electrically connected to a first output terminal and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of each of the MTJs varies based on the magnetic field. The circuit is configured to generate an analog output based on the output of at least one of the first and the second output terminal.

摘要翻译： 电路包括包括输入端子，输出端子，场线和磁隧道结（MTJ）的磁逻辑单元。 场线电连接第一和第二输入端子，并且被配置为基于对第一和第二输入端子中的至少一个的输入产生磁场。 输入是基于电路的模拟输入。 每个MTJ电连接到第一输出端和第二输出端，并且被配置为使得第一和第二输出端中的至少一个的输出响应于MTJ的组合电阻而变化。 每个MTJ的电阻根据磁场而变化。 电路被配置为基于第一和第二输出端子中的至少一个的输出来产生模拟输出。

公开(公告)号：US20150129946A1

公开(公告)日：2015-05-14

申请号：US14499523

申请日：2014-09-29

申请人： International Business Machines Corporation ,  Crocus Technology, SA

发明人： Anthony J. Annunziata ,  Sebastien Bandiera ,  Lucien Lombard ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC分类号： H01L27/22 ,  H01L43/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.

摘要翻译： 提供了一种用于读取和写入功率降低的热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 隧道势垒设置在铁磁感应层和铁磁存储层附近，使得隧道势垒夹在铁磁感测层和铁磁存储层之间。 反铁磁钉扎层邻近铁磁存储层设置。 钉扎层引导存储层的磁矩，直到加热。 与没有非磁性材料相比，存储层包括非磁性材料以减少存储层的磁化。 与没有非磁性材料相比，感应层包括非磁性材料以减小感测层的磁化强度。 存储层磁化强度和感测层磁化强度的降低降低了存储层和感测层之间的静磁相互作用，导致更少的读/写功率。

公开(公告)号：US20150077095A1

公开(公告)日：2015-03-19

申请号：US14552302

申请日：2014-11-24

申请人： Crocus Technology Inc.

发明人： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay ,  Barry Hoberman

IPC分类号： G01D5/12 ,  G01R33/09 ,  G01C17/02

CPC分类号： G01D5/12 ,  G01B7/30 ,  G01C17/02 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

摘要翻译： 一种装置包括电路，被配置为基于输入产生磁场的场线，被配置为确定每个电路的参数的感测模块以及被配置为确定所述装置相对于所述电路的角度定向的磁场方向确定模块 基于参数的外部磁场。 每个电路包括多个磁隧道结。 每个磁性隧道结包括具有存储磁化方向的存储层和具有基于磁场配置的感测磁化方向的感测层。 每个磁性隧道结被构造成使得感应磁化方向和磁性隧道结的电阻基于外部磁场而变化。 该参数根据多个磁隧道结的电阻而变化。 磁场方向确定模块在存储器或处理装置中的至少一个中实现。

公开(公告)号：US20140269042A1

公开(公告)日：2014-09-18

申请号：US14294239

申请日：2014-06-03

申请人： Crocus Technology S.A.

发明人： Neal Berger ,  Jean-Pierre Nozières

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/1673

摘要： The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

摘要翻译： 本公开涉及一种磁性随机存取存储单元，其包含由包括感测层和存储层之间的绝缘层形成的磁性隧道结。 本公开还涉及一种用于写入和读取存储单元的方法，包括在写入操作期间切换所述存储层的磁化方向以将数据写入所述存储层，并且在读取操作期间，对准所述感测层的磁化方向 在第一对准方向上，并且通过测量所述磁性隧道结的第一电阻值来比较所述写入数据与所述第一对准方向。 所公开的存储单元和方法允许以低功耗和增加的速度执行写入和读取操作。

公开(公告)号：US20140195883A1

公开(公告)日：2014-07-10

申请号：US14207066

申请日：2014-03-12

申请人： CROCUS TECHNOLOGY INC.

发明人： Bertrand F. Cambou ,  Neal Berger ,  Mourad El Baraji

IPC分类号： G06F11/08

CPC分类号： G06F11/08 ,  G06F7/02 ,  G06F2207/025 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C15/02 ,  G11C15/046

摘要： A check engine includes a plurality of comparators each including a first directional characteristic aligned to store at least one reference bit included in a set of reference bits, and a second directional characteristic aligned to present at least one target bit included in a set of target bits. Each of the plurality of comparators is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit, based on a relative alignment between the first directional characteristic and the second directional characteristic. The check engine is configured such that the outputs of the plurality of comparators are combined to produce a combined output. The check engine is configured to determine that the set of target bits matches the set of reference bits based on the combined output of the plurality of comparators.

摘要翻译： 检查引擎包括多个比较器，每个比较器包括对齐以存储包括在一组参考比特中的至少一个参考比特的第一方向特性，以及对准以呈现包括在一组目标比特中的至少一个目标比特的第二方向特性 。 多个比较器中的每一个被配置为基于第一方向特性和第二方向特性之间的相对对准来产生表示所述至少一个目标位和所述至少一个参考位之间的匹配水平的输出。 检查引擎被配置为使得多个比较器的输出被组合以产生组合输出。 检查引擎被配置为基于多个比较器的组合输出来确定目标比特的集合与参考比特集匹配。

公开(公告)号：US20140110802A1

公开(公告)日：2014-04-24

申请号：US13657708

申请日：2012-10-22

申请人： CROCUS TECHNOLOGY, INC.,

发明人： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC分类号： H01L29/82

CPC分类号： H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

摘要： A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

摘要翻译： 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。

公开(公告)号：US20130241636A1

公开(公告)日：2013-09-19

申请号：US13769156

申请日：2013-02-15

申请人： CROCUS TECHNOLOGY INC.

发明人： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay

IPC分类号： H03F15/00

CPC分类号： H03F15/00 ,  G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H03F19/00

摘要： An apparatus includes a circuit and a field line. The circuit includes a magnetic tunnel junction including a storage layer and a sense layer. The field line is configured to generate a magnetic field based on an input signal, where the magnetic tunnel junction is configured such that a magnetization direction of the sense layer and a resistance of the magnetic tunnel junction vary based on the magnetic field. The circuit is configured to amplify the input signal to generate an output signal that varies in response to the resistance of the magnetic tunnel junction.

摘要翻译： 一种装置包括电路和场线。 该电路包括一个包括存储层和感应层的磁性隧道结。 场线被配置为基于输入信号产生磁场，其中磁性隧道结被配置为使得感测层的磁化方向和磁性隧道结的电阻基于磁场而变化。 电路被配置为放大输入信号以产生响应于磁性隧道结的电阻而变化的输出信号。