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    SELF REFERENCE THERMALLY ASSISTED MRAM WITH LOW MOMENT FERROMAGNET STORAGE LAYER
    1.
    发明申请
    SELF REFERENCE THERMALLY ASSISTED MRAM WITH LOW MOMENT FERROMAGNET STORAGE LAYER 审中-公开
    具有低MOMENT FERROMAGNET存储层的自参考热辅助MRAM

    公开(公告)号：US20150129946A1

    公开(公告)日：2015-05-14

    申请号：US14499523

    申请日：2014-09-29

    申请人： International Business Machines Corporation ,  Crocus Technology, SA

    发明人： Anthony J. Annunziata ,  Sebastien Bandiera ,  Lucien Lombard ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

    IPC分类号： H01L27/22 ,  H01L43/02

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.

    摘要翻译： 提供了一种用于读取和写入功率降低的热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 隧道势垒设置在铁磁感应层和铁磁存储层附近，使得隧道势垒夹在铁磁感测层和铁磁存储层之间。 反铁磁钉扎层邻近铁磁存储层设置。 钉扎层引导存储层的磁矩，直到加热。 与没有非磁性材料相比，存储层包括非磁性材料以减少存储层的磁化。 与没有非磁性材料相比，感应层包括非磁性材料以减小感测层的磁化强度。 存储层磁化强度和感测层磁化强度的降低降低了存储层和感测层之间的静磁相互作用，导致更少的读/写功率。

    High Speed Magnetic Random Access Memory-based Ternary CAM
    2.
    发明申请
    High Speed Magnetic Random Access Memory-based Ternary CAM 有权
    高速磁随机存取存储器三元CAM

    公开(公告)号：US20130208523A1

    公开(公告)日：2013-08-15

    申请号：US13764139

    申请日：2013-02-11

    申请人： CROCUS TECHNOLOGY SA

    发明人： Jeremy Alvarez-Herault ,  Yann Conraux ,  Lucien Lombard

    IPC分类号： G11C15/02

    CPC分类号： G11C15/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/046 ,  G11C2211/5615

    摘要： The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.

    摘要翻译： 本公开涉及包括第一和第二磁性隧道结的自参照的基于磁性随机存取存储器的三进制内容可寻址存储器（MRAM-based TCAM）单元; 适于分别在第一和第二磁性隧道结中传递加热电流的第一和第二导电带; 导电线，串联电连接第一和第二磁性隧道结; 用于通过第一场电流以选择性地将第一写入数据写入到第一磁性隧道结的第一电流线; 以及用于传递写入电流以选择性地将第二写入数据写入到第二磁性隧道结的第二电流线，使得可以在基于MRAM的TCAM单元中写入三个不同的单元逻辑状态。

    Self-reference magnetic random access memory (MRAM) cell comprising ferrimagnetic layers
    3.
    发明授权
    Self-reference magnetic random access memory (MRAM) cell comprising ferrimagnetic layers 有权
    包含亚铁磁性层的自参考磁随机存取存储器（MRAM）单元

    公开(公告)号：US09165626B2

    公开(公告)日：2015-10-20

    申请号：US13625923

    申请日：2012-09-25

    申请人： Crocus Technology SA

    发明人： Ioan Lucian Prejbeanu ,  Lucien Lombard

    IPC分类号： G11C11/00 ,  G11C11/16

    CPC分类号： G11C11/16 ,  G11C11/00 ,  G11C11/1673 ,  G11C11/1675

    摘要： MRAM cell comprising a magnetic tunnel junction comprising a storage layer having a net storage magnetization being adjustable when the magnetic tunnel junction is at a high temperature threshold and being pinned at a low temperature threshold; a sense layer having a reversible sense magnetization; and a tunnel barrier layer between the sense and storage layers; at least one of the storage and sense layer comprising a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization and a sub-lattice of 4f rare-earth atoms providing a second magnetization, such that at a compensation temperature of said at least one of the storage layer and the sense layer, the first magnetization and the second magnetization are substantially equal. The disclosed MRAM cell can be written and read using a small writing and reading field, respectively.

    摘要翻译： MRAM单元包括磁隧道结，其包括存储层，所述存储层具有当磁性隧道结处于高温阈值并被固定在低温阈值时可净化的净存储磁化; 具有可逆感测磁化的感测层; 以及感测层和存储层之间的隧道势垒层; 所述存储和感测层中的至少一个包括铁氧体3d-4f非晶合金材料，其包含提供第一磁化的3d过渡金属原子的子晶格和提供第二磁化的4f稀土原子的子晶格，使得 在所述存储层和感测层中的至少一个的补偿温度下，第一磁化强度和第二磁化强度基本相等。 可以分别使用小的写入和读取字段来写入和读取所公开的MRAM单元。

    Self-referenced magnetic random access memory element comprising a synthetic storage layer
    4.
    发明授权
    Self-referenced magnetic random access memory element comprising a synthetic storage layer 有权
    包括合成存储层的自参照磁随机存取存储元件

    公开(公告)号：US08743597B2

    公开(公告)日：2014-06-03

    申请号：US13711820

    申请日：2012-12-12

    申请人： Crocus Technology SA

    发明人： Ioan Lucian Prejbeanu ,  Lucien Lombard ,  Quentin Stainer ,  Kenneth Mackay

    IPC分类号： G11C11/16 ,  G11C11/00 ,  G11C11/02 ,  G11C11/15

    CPC分类号： G11C11/161 ,  G01R33/093 ,  G01R33/098 ,  G11C11/15 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

    摘要： The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.

    摘要翻译： 本公开涉及一种包括磁性隧道结的MRAM元件，包括：存储层，感测层和包括在存储层和感测层之间的隧道势垒层; 所述存储层包括具有第一存储磁化的第一磁性层; 具有第二存储磁化的第二磁性层; 以及分离所述第一和第二磁性层的非磁性耦合层，使得所述第一存储磁化基本上反平行于所述第二存储磁化; 第一和第二磁性层布置成使得在读取温度下，第一存储磁化基本上等于第二存储磁化; 并且在写入温度高于读取温度时，第二存储磁化强度大于第一存储磁化强度。 当磁性隧道结在低温下被冷却时，所公开的MRAM元件产生低杂散场。

    MRAM element having improved data retention and low writing temperature
    6.
    发明授权
    MRAM element having improved data retention and low writing temperature 有权
    MRAM元件具有改进的数据保持和低写入温度

    公开(公告)号：US09331268B2

    公开(公告)日：2016-05-03

    申请号：US14405918

    申请日：2013-06-07

    申请人： CROCUS Technology SA

    发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Clarisse Ducruet ,  Lucien Lombard

    IPC分类号： H01L29/82 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/02

    摘要： A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.

    摘要翻译： 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。

    MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL WITH LOW POWER CONSUMPTION
    9.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL WITH LOW POWER CONSUMPTION 有权
    具有低功耗的磁性随机存取存储器（MRAM）单元

    公开(公告)号：US20150302911A1

    公开(公告)日：2015-10-22

    申请号：US14647600

    申请日：2013-11-19

    申请人： CROCUS TECHNOLOGY SA

    发明人： Lucien Lombard ,  Ioan Lucian Prejbeanu

    IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02

    CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

    摘要： A magnetic random access memory (MRAM) cell including a magnetic tunnel junction containing: a storage layer including at least one storage ferromagnetic layer, each storage ferromagnetic layer having a storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization at a low threshold temperature and freeing them at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer. The magnetic tunnel junction also includes a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that the storage magnetization can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. The disclosed MRAM cell has low power consumption.

    摘要翻译： 一种包括磁性隧道结的磁性随机存取存储器（MRAM）单元，其包括：包含至少一个存储铁磁层的存储层，每个存储铁磁层具有存储磁化; 反铁磁存储层将存储磁化固定在低阈值温度并在高温阈值下释放它们; 参考层; 以及在参考层和存储层之间的隧道势垒层。 磁性隧道结还包括具有自由磁化强度的自由铁磁层，该自由磁化适于诱导将磁性磁性层与存储层磁耦合的磁性杂散磁场; 使得当磁性隧道结处于高温阈值时，存储磁化可以被磁性杂散场切换。 所公开的MRAM单元具有低功耗。

    MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL, METHOD FOR WRITING AND READING THE MRAM CELL USING A SELF-REFERENCED READ OPERATION
    10.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL, METHOD FOR WRITING AND READING THE MRAM CELL USING A SELF-REFERENCED READ OPERATION 审中-公开
    磁性随机访问存储器（MRAM）单元，使用自动读取操作来写入和读取MRAM单元的方法

    公开(公告)号：US20130077390A1

    公开(公告)日：2013-03-28

    申请号：US13622513

    申请日：2012-09-19

    申请人： Crocus Technology SA

    发明人： Lucien Lombard ,  Ioan Lucian Prejbeanu

    IPC分类号： G11C11/16 ,  H01L29/82

    CPC分类号： G11C11/1673 ,  G11C11/16 ,  G11C11/161

    摘要： The present disclosure concerns a magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction comprising a synthetic storage layer; a sense layer having a sense magnetization that is reversible; and a tunnel barrier layer between the sense layer and the storage layer; wherein a net local magnetic stray field couples the storage layer with the sense layer; and wherein the net local magnetic stray field being such that the net local magnetic stray field coupling the sense layer is below 50 Oe. The disclosure also pertains to a method for writing and reading the MRAM cell. The disclosed MRAM cell can be written and read with lower consumption in comparison to conventional MRAM cells.

    摘要翻译： 本公开涉及包括包含合成存储层的磁性隧道结的磁随机存取存储器（MRAM）单元; 具有可逆的感测磁化的感测层; 以及在感测层和存储层之间的隧道势垒层; 其中净局部磁性杂散场将所述存储层与所述感测层耦合; 并且其中净局部磁性杂散场使得耦合感测层的净局部磁性杂散场低于50Oe。 本公开还涉及用于写入和读取MRAM单元的方法。 与常规MRAM单元相比，可以以较低的消耗量写入和读取所公开的MRAM单元。