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    Electrochromic materials and devices
    21.
    发明授权
    Electrochromic materials and devices 有权
    电致变色材料和器件

    公开(公告)号：US07471437B2

    公开(公告)日：2008-12-30

    申请号：US10813885

    申请日：2004-03-31

    申请人： Jerome R. Lenhard ,  Deepak Shukla

    发明人： Jerome R. Lenhard ,  Deepak Shukla

    IPC分类号： G02F1/15

    CPC分类号： C09K9/02 ,  C09K2211/1092

    摘要： The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.

    摘要翻译： 本发明涉及一种电致变色材料，以及一种利用电致变色材料的装置，其包含通式I的取代的1,1-二氧代噻喃，其中：X为碳，氮，氧或硫; n为0,1或2; R3独立地是吸电子基团或取代或未取代的烷基或芳基; R 1和R 5各自独立地表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基; R2和R4各自独立地表示氢或吸电子基团，或取代或未取代的烷基。

    Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    22.
    发明授权
    Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US07326956B2

    公开(公告)日：2008-02-05

    申请号：US11015897

    申请日：2004-12-17

    申请人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    发明人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0067 ,  H01L51/0545 ,  H01L51/5048 ,  Y02E10/549 ,  Y02P70/521

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代 包含组。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
    23.
    发明授权
    N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
    N，N'-二（苯基烷基）取代的苝基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料

    公开(公告)号：US07198977B2

    公开(公告)日：2007-04-03

    申请号：US11021739

    申请日：2004-12-21

    申请人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    发明人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0053 ,  B82Y30/00 ,  C09B5/62 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含四羧酸二酰亚胺3,4,9,10-苝基化合物，其具有连接到每个酰亚胺氮原子上的取代或未取代的苯基烷基。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    24.
    发明申请
    Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US20060131564A1

    公开(公告)日：2006-06-22

    申请号：US11015897

    申请日：2004-12-17

    申请人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    发明人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    IPC分类号： H01L29/08 ,  H01L29/04

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0067 ,  H01L51/0545 ,  H01L51/5048 ,  Y02E10/549 ,  Y02P70/521

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代 包含组。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    Aligned liquid crystal layer containing onium salts and process for increasing the tilt
    25.
    发明申请
    Aligned liquid crystal layer containing onium salts and process for increasing the tilt 审中-公开
    含有鎓盐的对准液晶层和增加倾斜的工艺

    公开(公告)号：US20060068123A1

    公开(公告)日：2006-03-30

    申请号：US11282409

    申请日：2005-11-18

    申请人： Deepak Shukla ,  Thomas Welter ,  James Elman ,  Samir Farid

    发明人： Deepak Shukla ,  Thomas Welter ,  James Elman ,  Samir Farid

    IPC分类号： B05D3/00

    CPC分类号： C09K19/582 ,  Y10T428/1005

    摘要： A process for forming a fixed liquid crystal layer having a predetermined tilt on an orientation layer comprises: a) adding a predetermined amount of an onium salt to a liquid crystal pre-polymer coating solution containing a liquid crystal pre-polymer and a UV initiator selected from the group consisting of benzophenone and acetophenone and their derivatives; benzoin, benzoin ethers, benzil, benzil ketals, fluorenone, xanthanone, alpha and beta naphthyl carbonyl compounds and ketones; b) coating the solution over the orientation layer; c) drying the coating to form a layer; and then d) UV irradiating the layer to fix the liquid crystal molecules.

    摘要翻译： 在取向层上形成具有预定倾斜度的固定液晶层的方法包括：a）将预定量的鎓盐加入到含有液晶预聚物和选择的UV引发剂的液晶预聚物涂布溶液中 由二苯甲酮和苯乙酮及其衍生物组成的组; 苯偶姻，苯偶姻醚，苯偶酰，苯偶酰缩酮，芴酮，呫吨酮，α和β萘基羰基化合物和酮; b）将溶液涂覆在取向层上; c）干燥涂层以形成层; 然后d）UV照射该层以固定液晶分子。

    Novel electrochromic materials and devices
    27.
    发明申请
    Novel electrochromic materials and devices 有权
    新型电致变色材料及装置

    公开(公告)号：US20050219678A1

    公开(公告)日：2005-10-06

    申请号：US10813885

    申请日：2004-03-31

    申请人： Jerome Lenhard ,  Deepak Shukla

    发明人： Jerome Lenhard ,  Deepak Shukla

    IPC分类号： C09K9/02 ,  G02F1/15 ,  C07D335/02

    CPC分类号： C09K9/02 ,  C09K2211/1092

    摘要： The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.

    摘要翻译： 本发明涉及一种电致变色材料，以及一种利用电致变色材料的装置，其包含通式I的取代的1,1-二氧代噻喃，其中：X为碳，氮，氧或硫; n为0,1或2; R3独立地是吸电子基团或取代或未取代的烷基或芳基; R 1和R 5各自独立地表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基; R2和R4各自独立地表示氢或吸电子基团，或取代或未取代的烷基。

    Aligned liquid crystal layer containing azolium salts and process for increasing the tilt
    28.
    发明申请
    Aligned liquid crystal layer containing azolium salts and process for increasing the tilt 失效
    含有偶氮盐的对准液晶层和增加倾斜度的工艺

    公开(公告)号：US20050129874A1

    公开(公告)日：2005-06-16

    申请号：US10736392

    申请日：2003-12-15

    申请人： Deepak Shukla ,  Thomas Welter ,  James Elman ,  Samir Farid

    发明人： Deepak Shukla ,  Thomas Welter ,  James Elman ,  Samir Farid

    IPC分类号： C09K19/58 ,  C09K19/52 ,  C09K19/54

    CPC分类号： C09K19/584 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1036

    摘要： Disclosed is a multilayer film comprising a substrate bearing an aligned liquid crystal layer wherein the aligned liquid crystal layer contains an azolium salt represented by formula (I): wherein the subscripts represent the ring positions and each X is independently N or C—R; each Z is independently N, N—R, C—(R)(R), 0, S, S02, SO, C═O, C═S, or C═NR; each R group is independently hydrogen or a substituent; and Y is a charge balancing anion, which may be a separate moiety or part of an X, Z, or R; provided two or more X, Z and R groups may form a ring; provided the salt may be part of an oligomer or polymer. Such a film provides a predetermined increase in pre-tilt angle for use in liquid crystal devices.

    摘要翻译： 公开了一种多层膜，其包含具有取向的液晶层的基板，其中所述取向的液晶层包含由式（I）表示的唑鎓盐：其中下标表示环位置，并且每个X独立地为N或C-R; 每个Z独立地为N，N-R，C（R）（R），O，S，SO 2，SO，C-O，C-S或C-NR; 每个R基团独立地为氢或取代基; 并且Y是电荷平衡阴离子，其可以是X，Z或R的单独部分或部分; 提供两个或多个X，Z和R基团可以形成环; 条件是盐可以是低聚物或聚合物的一部分。 这样的薄膜提供用于液晶装置的预倾斜角度的预定增加。