-
公开(公告)号：US20120313225A1
公开(公告)日：2012-12-13
申请号：US13564158
申请日：2012-08-01
CPC分类号： H01L29/7802 , H01L21/263 , H01L21/266 , H01L21/322 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。
-
公开(公告)号：US08264033B2
公开(公告)日：2012-09-11
申请号：US12506844
申请日：2009-07-21
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。
-
公开(公告)号：US08034700B2
公开(公告)日：2011-10-11
申请号：US12648749
申请日：2009-12-29
IPC分类号： H01L21/22
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661 , H01L29/36
摘要： A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
摘要翻译： 公开了制造二极管的方法。 一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。 半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。 在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。
-
公开(公告)号：US07812368B2
公开(公告)日：2010-10-12
申请号：US11419919
申请日：2006-05-23
IPC分类号： H01L29/74
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0692 , H01L29/32 , H01L29/66128
摘要： The invention relates to a high-speed diode comprising a semiconductor body (1), in which a heavily n-doped zone (8), a weakly n-doped zone (7) and a weakly p-doped zone (6) are arranged successively in a vertical direction (v), between which a pn load junction (4) is formed. A number of heavily p-doped islands (51-57) spaced apart from one another are arranged in the weakly p-doped zone (6). In this case, it is provided that the cross-sectional area density of the heavily p-doped islands (51-57) is smaller in a first area region (100) near to the edge than in a second area region (200) remote from the edge.
摘要翻译： 本发明涉及一种包括半导体本体（1）的高速二极管，其中重度n掺杂区域（8），弱n掺杂区域（7）和弱p掺杂区域（6）被布置 在垂直方向（v）上连续地形成pn负载接合部（4）。 在弱p掺杂区域（6）中布置有彼此间隔开的多个重p掺杂岛（51-57）。 在这种情况下，提供了在靠近边缘的第一区域区域（100）中，重p掺杂岛（51-57）的横截面积密度小于远离第二区域（200）的第二区域区域 从边缘。
-
公开(公告)号：US07687826B2
公开(公告)日：2010-03-30
申请号：US11463188
申请日：2006-08-08
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L31/1113 , H01L29/0692 , H01L29/083 , H01L29/7428
摘要： A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).
摘要翻译： 主晶闸管（1）具有集成到其n掺杂发射极（25）电连接到主晶闸管控制端子（140）的驱动晶闸管（2）的恢复保护。 此外，驱动晶闸管（2）的p掺杂发射极（28）电连接到主晶闸管（1）的p掺杂发射极（18）。 在这种情况下，提供了用于实现恢复保护的各种可选措施。 一种制造具有主晶闸管和驱动晶闸管的晶闸管系统的方法，所述驱动晶闸管（2）具有阳极短路（211），包括将粒子（230）引入所述半导体本体（200）的目标区域（225） 所述驱动晶闸管（2），所述半导体本体（200）的与所述后侧（202）相对的所述目标区域（225）与所述前侧（201）之间的距离小于或等于所述半导体本体 掺杂发射极（28）和前侧（201）。
-
26.发明授权Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component 有权在半导体本体和半导体部件中制造掩埋的N掺杂半导体区域的方法公开(公告)号：US07675108B2
公开(公告)日：2010-03-09
申请号：US11201874
申请日：2005-08-11
IPC分类号： H01L29/78
CPC分类号： H01L21/266 , H01L21/263 , H01L21/26506 , H01L29/0878 , H01L29/66333 , H01L29/66712 , H01L29/7395
摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。
-
公开(公告)号：US07656011B2
公开(公告)日：2010-02-02
申请号：US11969017
申请日：2008-01-03
IPC分类号： H01L29/861 , H01L29/06
摘要： A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
-
公开(公告)号：US07511353B2
公开(公告)日：2009-03-31
申请号：US10971572
申请日：2004-10-22
申请人： Anton Mauder , Frank Hille , Vytla Rajeev Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
发明人： Anton Mauder , Frank Hille , Vytla Rajeev Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
IPC分类号： H01L29/72
CPC分类号： H01L21/263 , H01L29/32 , H01L29/6609 , H01L29/861
摘要： A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the semiconductor volume (31) that is situated in front of the cathode (33) is reduced relative to the rest of the semiconductor volume (31).
摘要翻译： 半导体二极管（30）具有设置在阳极（32）和阴极（33）之间的阳极（32），阴极（33）和半导体体积（31）。 位于阴极（33）前方的半导体体积（31）的区域（34）内的电子迁移率和/或空穴迁移率相对于半导体体积（31）的其余部分减小。
-
29.发明授权Method for production of deep p regions in silicon, and semiconductor components produced using the method 有权用于生产硅中的深p区的方法以及使用该方法制造的半导体元件公开(公告)号：US07195994B2
公开(公告)日：2007-03-27
申请号：US11023039
申请日：2004-12-23
IPC分类号： H01L21/425
CPC分类号： H01L29/66712 , H01L21/263 , H01L27/0814 , H01L27/0817 , H01L29/0634 , H01L29/32 , H01L29/66136 , H01L29/66333 , H01L29/66363
摘要： The invention relates to a method for production of deep p regions in silicon, with the method having the following step: bombardment of an n substrate section, an n epitaxial section or an exposed weakly doped n region of a semiconductor component that is to be produced with high-energy particles, whose energy is chosen such that the previous n region is redoped to form a p region to the desired depth after a specific healing time at a specific healing temperature after the bombardment, and to its use for the production of semiconductor components, for example in order to carry out isolating diffusion.
摘要翻译： 本发明涉及一种用于生产硅中深p区的方法，该方法具有以下步骤：轰击要制备的半导体组分的n衬底部分，n外延部分或暴露的弱掺杂n区域 具有高能粒子，其能量被选择为使得先前的n区域被重新加工以在轰击之后的特定愈合温度下的特定愈合时间之后形成到所需深度的ap区域，并且用于生产半导体部件 ，例如为了进行隔离扩散。
-
公开(公告)号：US20060267104A1
公开(公告)日：2006-11-30
申请号：US11315976
申请日：2005-12-21
申请人： Detlef Scholz , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Carsten Schneider
发明人： Detlef Scholz , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Carsten Schneider
IPC分类号： H01L29/76
CPC分类号： H01L29/7424 , H01L23/051 , H01L29/7408 , H01L2924/0002 , H01L2924/00
摘要： A thyristor has a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction, the p-doped base (6) having a resistance zone (65) with a predetermined electrical resistance (R.int) extending in a lateral direction (r) perpendicular to the vertical direction, an external resistor (30, R.ext) that is arranged or can be arranged outside the semiconductor body (1) being electrically connected in parallel with the resistance zone (65), and the external resistor (30) having, in a specific temperature range, a temperature coefficient whose magnitude is less than the magnitude of the temperature coefficient of the resistance zone (65) in the specific temperature range.
摘要翻译： 晶闸管具有半导体本体（1），其中配置p掺杂发射极（8），n掺杂基极（7），p掺杂基极（6）和n掺杂主发射极（5） 具有在垂直于垂直方向的横向方向（r）延伸的具有预定电阻（R.int）的电阻区（65）的p掺杂基底（6），外部电阻器（30） ，Rext）布置或布置在半导体本体（1）的外部，与电阻区（65）并联电连接，外部电阻器（30）在特定温度范围内具有温度系数 其大小小于特定温度范围内电阻区（65）的温度系数的大小。
-
-
-
-
-
-
-
-
-
搜索结果
94 条记录 (耗时 0.016 秒)