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    PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    22.
    发明申请
    PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20070243659A1

    公开(公告)日：2007-10-18

    申请号：US11733131

    申请日：2007-04-09

    Applicant: Hee-Ju SHIN ,  Jong-Chan SHIN ,  Soon-Oh PARK ,  Hyeong-Geun AN ,  Han-Bong KO

    Inventor： Hee-Ju SHIN ,  Jong-Chan SHIN ,  Soon-Oh PARK ,  Hyeong-Geun AN ,  Han-Bong KO

    IPC: H01L21/06

    CPC classification number: H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1683

    Abstract: In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.

    Abstract translation: 在半导体存储器件及其制造方法中，在具有设置有第一焊盘的逻辑区域的衬底上形成绝缘层，并且随后设置有第二焊盘和下电极的单元区域。 绝缘层被蚀刻成具有第一开口的第一绝缘层图案，该第一开口露出第一焊盘。 第一插头形成在第一开口中。 将形成有第一插塞的第一绝缘层图案蚀刻成具有暴露下电极的第二开口的第二绝缘层图案。 包括相变材料的第二插头形成在第二开口中。 导线和上电极分别形成在第一插头和第二插头上。

    Methods of forming pattern structures
    24.
    发明申请
    Methods of forming pattern structures 有权
    形成图案结构的方法

    公开(公告)号：US20110272380A1

    公开(公告)日：2011-11-10

    申请号：US13184127

    申请日：2011-07-15

    Applicant: Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

    Inventor： Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

    IPC: B44C1/22

    CPC classification number: H01L27/228 ,  H01L43/12

    Abstract: An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

    Abstract translation: 示例性实施例涉及一种形成图案结构的方法，包括在基底上形成物体层，并在物体层上形成硬掩模。 使用包含含氟气体和氨（NH 3）气体的蚀刻气体与氧气一起在物体层上进行等离子体反应蚀刻工艺以形成图案。 氧气用于在蚀刻过程中抑制硬掩模的去除。

    PHASE CHANGE MEMORY DEVICE
    25.
    发明申请
    PHASE CHANGE MEMORY DEVICE 审中-公开
    相变存储器件

    公开(公告)号：US20110031461A1

    公开(公告)日：2011-02-10

    申请号：US12910672

    申请日：2010-10-22

    Applicant: Myung-Jin KANG ,  Yong-Ho HA ,  Doo-Hwan PARK ,  Jeong-Hee PARK ,  Hee-Ju SHIN

    Inventor： Myung-Jin KANG ,  Yong-Ho HA ,  Doo-Hwan PARK ,  Jeong-Hee PARK ,  Hee-Ju SHIN

    IPC: H01L45/00

    CPC classification number: G11C11/5678 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1683 ,  Y10T428/24273

    Abstract: A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening.

    Abstract translation: 一种制造相变存储器件的方法包括在第一层中形成开口，在开口和第一层上形成相变材料，将相变材料加热至足以使相变材料回流的第一温度 在所述开口中，其中所述第一温度小于所述相变材料的熔点，并且在将所述相变材料加热到所述第一温度之后，对所述相变材料进行图案化以在所述开口中限定相变元件。

    METHODS FOR MANUFACTURING A PHASE-CHANGE MEMORY DEVICE
    26.
    发明申请
    METHODS FOR MANUFACTURING A PHASE-CHANGE MEMORY DEVICE 有权
    制造相变存储器件的方法

    公开(公告)号：US20100197076A1

    公开(公告)日：2010-08-05

    申请号：US12762560

    申请日：2010-04-19

    Applicant: Yong-Ho Ha ,  Bong-Jin Kuh ,  Han-Bong Ko ,  Doo-Hwan Park ,  Sang-Wook Lim ,  Hee-Ju Shin

    Inventor： Yong-Ho Ha ,  Bong-Jin Kuh ,  Han-Bong Ko ,  Doo-Hwan Park ,  Sang-Wook Lim ,  Hee-Ju Shin

    IPC: H01L21/06

    CPC classification number: H01L45/06 ,  C04B35/56 ,  C04B35/573 ,  C04B2235/3817 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/40 ,  C04B2235/402 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/408 ,  C04B2235/428 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675 ,  H01L45/1683

    Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.

    Abstract translation: 在形成硫属化物化合物靶的方法中，制备包括碳化锗或锗的第一粉末，并制备包含锑或锑的第二粉末。 制备包括碲化镉或碲的第三种粉末。 通过混合第一至第三粉末形成粉末混合物。 通过模制粉末混合物形成成形体后。 通过烧结粉末混合物获得硫属化物化合物靶。 考虑到碳，金属和氮的含量，硫属化物化合物靶可以包括含有碳和金属或碳，金属和氮的硫属化物化合物，使得使用硫属化物化合物靶形成的相变材料层可以稳定的相变，增强 结晶温度和阻力增加。 包括相变材料层的相变存储器件可以降低设定电阻和驱动电流，同时提高耐久性和感测裕度。

    MAGNETIC DEVICE
    27.
    发明申请
    MAGNETIC DEVICE 有权
    磁性装置

    公开(公告)号：US20140327095A1

    公开(公告)日：2014-11-06

    申请号：US14254858

    申请日：2014-04-16

    Applicant: Young-hyun KIM ,  Hee-ju SHIN ,  Woo-jin KIM ,  Sang-hwan PARK

    Inventor： Young-hyun KIM ,  Hee-ju SHIN ,  Woo-jin KIM ,  Sang-hwan PARK

    IPC: H01L43/02

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.

    Abstract translation: 磁性装置可以包括隧道沐浴器和邻近隧道屏障设置的混合磁化层。 混合磁化层可以包括第一垂直磁各向异性（PMA）层，第二PMA层和设置在第一和第二PMA层之间的非晶形阻挡层。 第一PMA层可以包括多层膜，其中由Co形成的第一层和由Pt或Pd形成的第二层交替堆叠。 由与第一层和第二层不同的元素形成的第一掺杂剂也可以包括在第一PMA层中。 第二PMA层可以设置在第一PMA层和隧道势垒之间，并且可以包括选自由Co，Fe和Ni组成的组中的至少一种元素。

    Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same
    28.
    发明授权
    Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same 有权
    用于形成磁隧道结结构的方法和使用其形成磁性随机存取存储器的方法

    公开(公告)号：US08796042B2

    公开(公告)日：2014-08-05

    申请号：US13286630

    申请日：2011-11-01

    Applicant: Hee-Ju Shin ,  Jun-Ho Jeong ,  Jang-Eun Lee ,  Se-Chung Oh

    Inventor： Hee-Ju Shin ,  Jun-Ho Jeong ,  Jang-Eun Lee ,  Se-Chung Oh

    IPC: H01L21/00

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228

    Abstract: A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.

    Abstract translation: 制造磁性隧道结结构的方法包括在衬底上形成磁性隧道结层。 在第二磁性层的区域上形成掩模图案。 通过多次执行至少一个蚀刻工艺和至少一个氧化工艺来形成在磁性隧道结层图案的至少一个侧壁上的磁性隧道结层图案和侧壁电介质层图案。 所述至少一个蚀刻工艺可以包括使用惰性气体蚀刻磁性隧道结层的一部分并且掩模图案以形成第一蚀刻产物的第一蚀刻工艺。 所述至少一个氧化工艺可以包括第一氧化工艺以氧化附着在磁性隧道结层的蚀刻侧上的第一蚀刻产物。

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