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    Method for fabricating semiconductor device with self-aligned storage node
    2.
    发明授权
    Method for fabricating semiconductor device with self-aligned storage node 失效
    用于制造具有自对准存储节点的半导体器件的方法

    公开(公告)号：US06838341B2

    公开(公告)日：2005-01-04

    申请号：US10688079

    申请日：2003-10-16

    Applicant: Jae-Man Yoon ,  Yun-Jae Lee ,  Sang-Hyun Lee ,  Wook-Je Kim

    Inventor： Jae-Man Yoon ,  Yun-Jae Lee ,  Sang-Hyun Lee ,  Wook-Je Kim

    IPC: H01L21/02 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

    CPC classification number: H01L27/10814 ,  H01L21/76802 ,  H01L21/76897 ,  H01L27/10855 ,  H01L28/91

    Abstract: A method for fabricating a semiconductor device includes preparing a semiconductor substrate having a contact pad; forming a first insulating film having a storage node contact exposing the contact pad and having a stack structure of an upper interlayer insulating film, a bottom interlayer insulating film, and an etching stopper between the upper and bottom interlayer insulating layers that protrudes into the storage node contact; forming a first conductive film for a storage node on the substrate; forming a second insulating film where a portion of a surface corresponding to the storage node contact is recessed; forming an etching mask layer on the recessed portion of the second insulating film; etching the second insulating film using the etching mask layer; forming a second conductive film for a storage node on the substrate; etching the first and second conductive films to isolate nodes; and removing the etching mask layer, the second insulating film and the upper interlayer insulating film.

    AUTOMOTIVE DOOR HAVING INTERIOR DOOR HANDLE FOR PREVENTING ACCIDENT
    3.
    发明申请
    AUTOMOTIVE DOOR HAVING INTERIOR DOOR HANDLE FOR PREVENTING ACCIDENT 审中-公开

    公开(公告)号：US20180258672A1

    公开(公告)日：2018-09-13

    申请号：US15979618

    申请日：2018-05-15

    Applicant: Yun Jae Lee

    Inventor： Yun Jae LEE ,  Go eun LEE ,  Si eun LEE

    IPC: E05B85/12

    CPC classification number: E05B85/12

    Abstract: Provided is an automotive door having an interior door handle for preventing an accident. The door handle is connected to a rod to control operation of a door lock assembly inside a vehicle and is disposed on a door of the vehicle at a position corresponding to the shoulder of an adult sitting in the vehicle. Since the door handle is disposed on a door at a position corresponding to the shoulder of an adult sitting in the vehicle, when a passenger opens a door to exit a vehicle, his/her body is naturally turned back, so his/her eyes also naturally face the rear area. Accordingly, a collision with another vehicle, a motorcycle, or a bicycle approaching from behind can be prevented. Further, since the passenger looks back every time he/she opens a door, his/her consciousness about a safety accident when opening a door is increased.

    PHOTOSENSITIVE RESIN COMPOSITION
    6.
    发明申请
    PHOTOSENSITIVE RESIN COMPOSITION 有权
    感光树脂组合物

    公开(公告)号：US20130344437A1

    公开(公告)日：2013-12-26

    申请号：US13574354

    申请日：2010-11-19

    Applicant: Pil Rye Yang ,  Kyung Keun Yoon ,  Yun Jae Lee

    Inventor： Pil Rye Yang ,  Kyung Keun Yoon ,  Yun Jae Lee

    IPC: G03F7/028

    CPC classification number: G03F7/028 ,  G03F7/0007 ,  G03F7/038 ,  G03F7/0758

    Abstract: Disclosed is a photosensitive resin composition for an organic insulating layer. More specifically, the photosensitive resin composition is suitable for forming a substrate of a transflective thin film transistor liquid crystal display (TFT-LCD) or a pattern of an interlayer insulating layer by improving remarkably a pattern property with a high taper angle besides improvement of flatness, sensitivity, heat resistance, and transparency. Particularly, the photosensitive resin composition can provide low power dissipation besides a wide viewing angle and high visibility when being applied to a transflective type display. In addition, the photosensitive resin composition can provide a clear screen under natural light without a backlight by maintaining the brightness of a screen and prominent field visibility.

    Abstract translation: 公开了一种有机绝缘层用感光性树脂组合物。 更具体地，感光性树脂组合物适合于通过除了改善平坦度以外，通过显着提高具有高锥角的图案特性来形成透反射薄膜晶体管液晶显示器（TFT-LCD）的基板或层间绝缘层的图案 ，灵敏度，耐热性和透明度。 特别是，当应用于半透反射型显示器时，感光性树脂组合物除了具有广视角和高可见度外，还能够提供低功耗。 此外，感光性树脂组合物可以通过保持屏幕的亮度和突出的视场可视性而在自然光下提供无背光的清晰屏幕。

    Method of processing a defect source at a wafer edge region in a semiconductor manufacturing
    8.
    发明授权
    Method of processing a defect source at a wafer edge region in a semiconductor manufacturing 失效
    在半导体制造中在晶片边缘区域处理缺陷源的方法

    公开(公告)号：US06607983B1

    公开(公告)日：2003-08-19

    申请号：US09707353

    申请日：2000-11-06

    Applicant: Kwang-Youl Chun ,  Yun-Jae Lee ,  Won-Seong Lee ,  Jeong-Hoon Oh ,  Kyu-Hyun Lee

    Inventor： Kwang-Youl Chun ,  Yun-Jae Lee ,  Won-Seong Lee ,  Jeong-Hoon Oh ,  Kyu-Hyun Lee

    IPC: H01L21461

    CPC classification number: H01L21/02063 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

    Abstract: The present invention provides a method of eliminating or covering a defect source in a wafer edge region for semiconductor fabrication. During the etching process of a sacrificial oxide layer for storage node openings, the sacrificial oxide layer has a rumple topology in the wafer edge region due to etching non-uniformity of a photoresist layer formed on the sacrificial oxide layer. Subsequent deposition of a conductive layer and planarization etching, the conductive layer undesirably remains at the wafer edge region as a defect source. Such conductive contaminant particles dislodge, causing many problems in the wafer main region. The present invention removes such a defect source via two methods. One is to directly remove the defect source using a photoresist pattern exposing thereof. The other is to fix the defect source in place in the wafer edge region by protecting thereof by a photoresist pattern during subsequent cleaning processes.

    Abstract translation: 本发明提供一种消除或覆盖用于半导体制造的晶片边缘区域中的缺陷源的方法。 在用于存储节点开口的牺牲氧化物层的蚀刻工艺期间，由于蚀刻在牺牲氧化物层上形成的光致抗蚀剂层的不均匀性，牺牲氧化物层在晶片边缘区域中具有隆起的拓扑结构。 随后沉积导电层和平坦化蚀刻，导电层不期望地保留在晶片边缘区域作为缺陷源。 这种导电性污染物颗粒移动，在晶片主区域引起许多问题。 本发明通过两种方法去除这种缺陷源。 一个是使用其曝光的光致抗蚀剂图案直接去除缺陷源。 另一种是通过在随后的清洁过程中通过光致抗蚀剂图案的保护来将缺陷源固定在晶片边缘区域中。

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