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公开(公告)号：US20240038589A1
公开(公告)日：2024-02-01
申请号：US17877500
申请日：2022-07-29
申请人： IMEC VZW
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L21/76897 , H01L21/76885 , H01L23/5226 , H01L23/53285
摘要： A method for forming a superconducting interconnect structure, comprising: providing a substrate, forming a superconductive layer, forming a layer of a first dielectric material, removing parts of the layer of the first dielectric material and of the superconductive layer so as to form a pattern comprising a first set of line structures comprising: a first set of superconductive line structures, and a first set of line structures made of the first dielectric material, forming a second dielectric material between the line structures of the first set, forming a layer formed of a third dielectric material, providing a patterned mask, transferring the pattern into the first dielectric material and into the layer formed of the third dielectric material, so as to form the at least one via hole, removing the patterned mask, and forming a superconductive material layer so as to form at least one via.
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公开(公告)号：US20240036470A1
公开(公告)日：2024-02-01
申请号：US18356700
申请日：2023-07-21
申请人： IMEC VZW
CPC分类号： G03F7/11 , G03F7/0035 , G03F1/38 , G03F1/56 , G03F7/094
摘要： A method is provided for forming an interconnect structure for an integrated circuit. The method includes: forming a metal layer over a substrate; forming a hard mask layer over the metal layer; forming a first resist layer of a first resist material over the hard mask layer and patterning the first resist layer in a first lithography process to define a first resist pattern; forming over the first resist pattern a second resist layer of a second resist material different from the first resist material and patterning the second resist layer in a second lithography process to define a second resist pattern of resist lines extending in parallel along a first direction, wherein at least a portion of the first resist pattern is overlapped by the second resist pattern; patterning the hard mask layer using the second resist pattern as an etch mask to define a hard mask line pattern underneath the second resist pattern, and subsequently the metal layer to define a metal line pattern underneath the hard mask line pattern; removing the second resist pattern and subsequently patterning the hard mask line pattern using said at least a portion of the first resist pattern as an etch mask to define a hard mask pillar pattern over the metal line pattern; and forming a metal pillar pattern in accordance with the hard mask pillar pattern.
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公开(公告)号：US20240023459A1
公开(公告)日：2024-01-18
申请号：US18351308
申请日：2023-07-12
发明人： Van Dai Nguyen , Eline Raymenants , Sebastien Couet , Maxwel Gama Monteiro Junior , Bob Vermeulen
CPC分类号： H10N50/10 , H10N50/01 , H10N50/85 , H10B61/00 , G11C11/161
摘要： A magnetic device may include at least two MTJ pillars, each MTJ pillar comprising a stack of a heavy metal layer portion, a second free magnetic layer portion, a spacer portion, a first free magnetic layer portion, a tunnel barrier layer portion, and a fixed magnetic layer portion, wherein at least the heavy metal layer portions, the second free magnetic layer portions and the spacer portions extend between the MTJ pillars through respectively an interconnecting heavy metal layer portion, an interconnecting second free magnetic layer portion and an interconnecting spacer portion, and wherein the interconnecting second free magnetic layer portion has an in-plane magnetization and the second free magnetic layer portions have an out-of-plane magnetization.
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公开(公告)号：US20240018686A1
公开(公告)日：2024-01-18
申请号：US18351402
申请日：2023-07-12
摘要： In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.
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公开(公告)号：US20230413504A1
公开(公告)日：2023-12-21
申请号：US18335310
申请日：2023-06-15
IPC分类号： H10B10/00
CPC分类号： H10B10/125
摘要： A bit cell for a Static Random-Access Memory (SRAM) is provided that includes first and second sets of transistors. Each set of transistors includes a respective pass-gate transistor and a respectively stacked complementary transistor pair of an upper transistor and a lower transistor. A source/drain terminal of a lower transistor of each set of transistors is connected to a respective first power supply extending in a first power supply track arranged below the lower transistor, whereas a source/drain terminal of an upper transistor of each set of transistors is connected to a respective second power supply extending in a second power supply track arranged above the upper transistor.
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公开(公告)号：US20230382758A1
公开(公告)日：2023-11-30
申请号：US18325823
申请日：2023-05-30
申请人： IMEC VZW
IPC分类号： C01G30/00 , H01L29/786
CPC分类号： C01G30/005 , H01L29/78693 , C01P2002/02
摘要： Mixed metal oxides and methods for making the mixed metal oxides are disclosed. A mixed metal oxide includes metal or metalloid elements including 0.50 to 0.90 parts by mole Mg, 0.05 to 0.30 parts by mole Al, 0.01 to 0.20 parts by mole Sb, and 0.00 to 0.31 parts by mole of other elements selected from metals and metalloids. The sum of all parts by mole of Mg, Al, Sb, and the other elements selected from metals and metalloids may amount to about 1.00. The mixed metal oxide additionally includes oxygen, and less than 0.01 parts by mole of non-metallic and non-metalloid impurities.
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公开(公告)号：US11822118B2
公开(公告)日：2023-11-21
申请号：US17851647
申请日：2022-06-28
申请人： IMEC VZW , Universiteit Gent
CPC分类号： G02B6/12019 , G02B6/4215
摘要： An integrated photonic device for wavelength division multiplexing comprises: a wavelength-splitting/combining component configured to be re-used for both splitting a single signal to be split, wherein the signal to be split comprises plural wavelengths, to plural split signals, wherein each of the plural split signals is related to a unique wavelength band, and combining plural signals to be combined, wherein each of the plural signals to be combined is related to a unique wavelength band, to a single combined signal, wherein the wavelength-splitting/combining component comprises at least one output channel for providing an output signal and at least one response channel for receiving a response input signal from a light interaction induced by the output signal, wherein the output channel and the response channel are connected to different ports of the wavelength-splitting/combining component.
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公开(公告)号：US11819864B2
公开(公告)日：2023-11-21
申请号：US17988874
申请日：2022-11-17
申请人： IMEC VZW , UNIVERSITEIT HASSELT
摘要： A method for applying thin film material onto a substrate comprises: forming microdroplets of a solvent and a solute material forming the thin film material; depositing the microdroplets on an upper surface of a micro-structured mesh, wherein the microdroplets are deposited to allow coalescing into droplets extending into the micro-structured mesh; and arranging a surface of the substrate in close relation to a bottom surface of the micro-structured mesh such that a capillary force draws liquid of the droplets onto the surface of the substrate, whereby forced dynamic wetting of the surface of the substrate is provided to form a liquid film on the surface of the substrate.
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公开(公告)号：US20230352615A1
公开(公告)日：2023-11-02
申请号：US18065918
申请日：2022-12-14
申请人： IMEC VZW
发明人： Pieter Bex , Alain Phommahaxay
IPC分类号： H01L33/00 , H01L25/075
CPC分类号： H01L33/005 , H01L25/0753 , H01L33/486 , H01L2933/0066
摘要： The present disclosure provides that a plurality of dies are temporarily attached to a rigid transfer substrate through a light-releasable temporary bonding layer. The transfer substrate is a rigid substrate that is transparent for the type of light that is capable of releasing the dies, i.e. the type of light that is capable of removing or releasing the light-releasable layer. This may be laser light or other visible or invisible light such as UV, IR or LED light. The assembly comprising the transfer substrate and the dies is positioned relative to a carrier substrate with the dies facing respective interface areas on a surface of the carrier substrate. By illuminating a die through the back side of the transfer substrate, the die is released and transferred to the carrier substrate. The method is suitable for bonding dies to a carrier without any mechanical handling of individual dies.
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公开(公告)号：US11793085B2
公开(公告)日：2023-10-17
申请号：US17445557
申请日：2021-08-20
申请人： IMEC vzw
摘要： According to an aspect, there is provided a method of forming a magnetic tunneling junction (MTJ) device, including: forming a layer stack including an MTJ layer structure and a spin-orbit torque (SOT) layer below the MTJ layer structure; forming a first etch mask over the layer stack, the first etch mask including a first mask line extending in a first horizontal direction; patterning the layer stack to form an MTJ line extending in the first horizontal direction, the patterning including etching while the first etch mask masks the layer stack, and stopping etching on or above the SOT-layer; forming sidewall spacers on one or both sides of the MTJ line; while the sidewall spacers mask the SOT-layer, etching the SOT-layer to form a patterned layer stack including the MTJ line and a first patterned SOT-layer; forming a second etch mask over the patterned layer stack, the second etch mask including a second mask line extending in a second horizontal direction across the MTJ line; and patterning the patterned layer stack to form a twice patterned SOT-layer, the twice patterned SOT-layer including an SOT-line extending in the second horizontal direction, and to form an MTJ pillar on the SOT-line, the patterning including etching while the second etch mask masks the patterned layer stack.
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