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    High voltage breakover diode having comparable forward breakover and reverse breakdown voltages
    21.
    发明授权
    High voltage breakover diode having comparable forward breakover and reverse breakdown voltages 有权
    具有相当的前置分断和反向击穿电压的高压断流二极管

    公开(公告)号：US08878236B1

    公开(公告)日：2014-11-04

    申请号：US13892231

    申请日：2013-05-10

    申请人： IXYS Corporation

    发明人： Subhas Chandra Bose Jayappa Veeramma

    IPC分类号： H01L27/02 ,  H01L29/87 ,  H01L29/66

    CPC分类号： H01L29/87 ,  H01L23/62 ,  H01L25/074 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0646 ,  H01L29/0692 ,  H01L29/423 ,  H01L29/66121 ,  H01L2924/0002 ,  H03K17/08108 ,  H01L2924/00

    摘要： In a first embodiment, an ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In a second embodiment, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. In a third embodiment, a string of series-connected breakover diode dice is provided, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.

    摘要翻译： 在第一实施例中，超快断路二极管具有小于0.3微秒的导通时间TON，其中正向断流电压大于+400伏特并且变化小于每十摄氏度变化的1％。 在第二实施例中，分解二极管的反向击穿电压绝对值大于正向击穿电压大于+400伏特的正向击穿电压。 在第三实施例中，串联连接的断路二极管管芯与电阻器串一起提供在封装电路中。 即使封装电路不包括离散的高压反向击穿二极管，封装的电路就像具有大的正向断开电压和相当大的反向击穿电压的单个断开二极管。 封装电路可用于向电压保护电路中的晶闸管提供触发电流。

    POWER TRANSISTOR WITH INCREASED AVALANCHE CURRENT AND ENERGY RATING
    22.
    发明申请
    POWER TRANSISTOR WITH INCREASED AVALANCHE CURRENT AND ENERGY RATING 审中-公开
    功率晶体管具有增加的AVALANCHE电流和能量等级

    公开(公告)号：US20140273384A1

    公开(公告)日：2014-09-18

    申请号：US14290994

    申请日：2014-05-30

    申请人： IXYS Corporation

    发明人： Kyoung Wook Seok

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66681 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66333 ,  H01L29/66727 ,  H01L29/7395 ,  H01L29/7811

    摘要： A field-effect transistor involves a drain electrode, a drift region, a body region, a source region, a gate insulator layer, and a gate electrode. The drift region is disposed above the drain electrode. The body region extends down into the drift region from a first upper semiconductor surface. The source region is ladder-shaped and extends down in the body region from a second upper semiconductor surface. The first and second upper semiconductor surfaces are substantially planar and are not coplanar. A first portion of the body region is surrounded laterally by a second portion of the body region. The second portion of the body region and the drift region meet at a body-to-drift boundary. The body-to-drift boundary has a central portion that is non-planar. A gate insulator layer is disposed over the source region and a gate electrode is disposed over the gate insulator.

    摘要翻译： 场效应晶体管包括漏电极，漂移区，体区，源极区，栅极绝缘体层和栅电极。 漂移区设置在漏极上方。 身体区域从第一上半导体表面向下延伸到漂移区域。 源极区域是梯形的并且在第二上部半导体表面的体区域中向下延伸。 第一和第二上半导体表面基本上是平面的并且不共面。 身体区域的第一部分被身体区域的第二部分横向包围。 身体区域和漂移区域的第二部分在身体到漂移边界处相遇。 身体到漂移边界具有非平面的中心部分。 栅极绝缘体层设置在源极区上方，并且栅电极设置在栅极绝缘体上方。

    FULL BRIDGE RECTIFIER MODULE
    23.
    发明申请
    FULL BRIDGE RECTIFIER MODULE 有权
    全桥整流器模块

    公开(公告)号：US20130285210A1

    公开(公告)日：2013-10-31

    申请号：US13931599

    申请日：2013-06-28

    申请人： IXYS Corporation

    发明人： Kyoung Wook Seok

    IPC分类号： H01L27/06

    CPC分类号： H01L25/0655 ,  H01L23/3107 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5386 ,  H01L23/645 ,  H01L27/0647 ,  H01L27/0761 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M7/003 ,  H02M7/04 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A full bridge rectifier includes four bipolar transistors, each of which has an associated parallel diode. A first pair of inductors provides inductive current splitting and thereby provides base current to/from one pair of the bipolar transistors so that the collector-to-emitter voltages of the bipolar transistors are low. A second pair of inductors similarly provides inductive current splitting to provide base current to/from the other pair of bipolar transistors. In one embodiment, all components are provided in a four terminal full bridge rectifier module. The module can be used as a drop-in replacement for a conventional four terminal full bridge diode rectifier. When current flows through the rectifier module, however, the voltage drop across the module is less than one volt. Due to the reduced low voltage drop, power loss in the rectifier module is reduced as compared to power loss in a conventional full bridge diode rectifier.

    摘要翻译： 全桥整流器包括四个双极晶体管，每个具有相关的并联二极管。 第一对电感器提供感应电流分流，从而向一对双极晶体管提供基极电流，从而使双极晶体管的集电极到发射极的电压较低。 第二对电感器类似地提供感应电流分离以向/从另一对双极晶体管提供基极电流。 在一个实施例中，所有部件都设置在四端子全桥整流器模块中。 该模块可用作常规四端子全桥二极管整流器的插入式替代。 然而，当电流流过整流器模块时，模块上的电压降小于1伏。 由于降低的低压降，与传统的全桥二极管整流器中的功率损耗相比，整流器模块中的功率损耗降低。

    Breakdown voltage for power devices
    24.
    发明申请
    Breakdown voltage for power devices 有权
    功率器件的击穿电压

    公开(公告)号：US20040119087A1

    公开(公告)日：2004-06-24

    申请号：US10650451

    申请日：2003-08-27

    申请人： IXYS Corporation

    发明人： Subhas C. Bose Jayappa Veeramma ,  Ulrich Kelberlau

    IPC分类号： H01L033/00

    CPC分类号： H01L29/0834 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/861

    摘要： A power device includes a semiconductor substrate of first conductivity having an upper surface and a lower surface. An isolation diffusion region of second conductivity is provided at a periphery of the substrate and extends from the upper surface to the lower surface of the substrate. The isolation diffusion region has a first surface corresponding to the upper surface of the substrate and a second surface corresponding to the lower surface. A peripheral junction region of second conductivity is formed at least partly within the isolation diffusion region and formed proximate the first surface of the isolation diffusion region. First and second terminals are provided.

    摘要翻译： 功率器件包括具有上表面和下表面的第一导电性半导体衬底。 在基板的周边设置有第二导电性的隔离扩散区域，从基板的上表面延伸到下表面。 隔离扩散区域具有对应于基板的上表面的第一表面和对应于下表面的第二表面。 至少部分地在隔离扩散区域内形成具有第二导电性的外围连接区域，并且形成在隔离扩散区域的第一表面附近。 提供第一和第二端子。

    Hot-swap protection circuit
    26.
    发明申请
    Hot-swap protection circuit 有权
    热插拔保护电路

    公开(公告)号：US20020118501A1

    公开(公告)日：2002-08-29

    申请号：US10029593

    申请日：2001-12-21

    申请人： IXYS Corporation

    发明人： Sam Seiichiro Ochi

    IPC分类号： H02H009/08

    CPC分类号： H02H9/004 ,  H03K17/0822 ,  H03K17/163

    摘要： Embodiments of the present invention provide methods and circuitry for protecting a circuit during hot-swap events. Hot swap protection circuitry includes as overcurrent detection circuit which decouples power from a load. Circuitry is provided to detect ground-fault conditions. Noise detection circuitry is provided to reduce noise in the power that is delivered to the load.

    摘要翻译： 本发明的实施例提供了用于在热插拔事件期间保护电路的方法和电路。 热插拔保护电路包括作为使负载断电的过电流检测电路。 提供电路以检测接地故障状况。 提供噪声检测电路以减少输送到负载的电力中的噪声。

    Synchronous sensing of inductor current in a buck converter control circuit
    27.
    发明授权
    Synchronous sensing of inductor current in a buck converter control circuit 有权

    公开(公告)号：US10050527B2

    公开(公告)日：2018-08-14

    申请号：US15693494

    申请日：2017-09-01

    申请人： IXYS Corporation

    发明人： Anatoliy V. Tsyrganovich

    IPC分类号： H02M3/156 ,  H02M1/00

    摘要： A sense resistor is placed in series with an output capacitor of a buck converter. The buck converter operates in a discontinuous mode such that there is a dead time in each switching cycle. A control circuit senses a voltage across the sense resistor and thereby generates a first signal ICS. The control circuit detects an offset voltage in ICS, where the offset voltage is the voltage of ICS during the dead time in a first switching cycle. The control circuit level shifts the entire ICS by the offset voltage, thereby generating a second signal ICLS. ICLS has the same waveform as the waveform of the inductor current. In a second cycle, ICLS is used to determine when to turn off the main switch and when the start of the dead time occurs. ICLS and the offset voltage are used together to determine when to turn the main switch on.

    Low forward voltage rectifier using capacitive current splitting
    28.
    发明授权
    Low forward voltage rectifier using capacitive current splitting 有权

    公开(公告)号：US10038383B2

    公开(公告)日：2018-07-31

    申请号：US14701532

    申请日：2015-05-01

    申请人： IXYS Corporation

    发明人： Kyoung Wook Seok

    IPC分类号： H02M3/335

    CPC分类号： H02M3/33507 ,  G05F1/46 ,  H01L27/0664 ,  H02M1/083 ,  H02M3/33576 ,  H02M2001/0048 ,  H05K13/00 ,  Y02B70/1433 ,  Y02B70/1491 ,  Y10T29/49117

    摘要： A Low Forward Voltage Rectifier (LFVR) circuit includes a bipolar transistor, a parallel diode, and a capacitive current splitting network. The LFVR circuit, when it is performing a rectifying function, conducts the forward current from a first node to a second node provided that the voltage from the first node to the second node is adequately positive. The capacitive current splitting network causes a portion of the forward current to be a base current of the bipolar transistor, thereby biasing the transistor so that the forward current experiences a low forward voltage drop across the transistor. The LFVR circuit sees use in as a rectifier in many different types of switching power converters, including in flyback, Cuk, SEPIC, boost, buck-boost, PFC, half-bridge resonant, and full-bridge resonant converters. Due to the low forward voltage drop across the LFVR, converter efficiency is improved.

    Packaged Overvoltage Protection Circuit For Triggering Thyristors
    30.
    发明申请
    Packaged Overvoltage Protection Circuit For Triggering Thyristors 审中-公开

    公开(公告)号：US20180145186A1

    公开(公告)日：2018-05-24

    申请号：US15876139

    申请日：2018-01-20

    申请人： IXYS Corporation

    发明人： Subhas Chandra Bose Jayappa Veeramma

    IPC分类号： H01L29/87 ,  H01L23/62 ,  H01L29/06 ,  H01L25/07

    CPC分类号： H01L29/87 ,  H01L23/62 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/0638 ,  H01L2224/06181 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/00

    摘要： In a first embodiment, an ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In a second embodiment, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. In a third embodiment, a string of series-connected breakover diode dice is provided, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.