公开(公告)号：US20170316992A1

公开(公告)日：2017-11-02

申请号：US15143575

申请日：2016-04-30

申请人： IXYS Corporation

发明人： Thomas Spann

IPC分类号： H01L23/049 ,  H01L23/367 ,  H01L23/32 ,  H01L23/492 ,  H01L23/08

CPC分类号： H01L23/049 ,  H01L23/04 ,  H01L23/08 ,  H01L23/32 ,  H01L23/3672 ,  H01L23/492 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/014 ,  H01L2924/00014

摘要： A power semiconductor device module includes a metal baseplate and a plastic housing that together form a tray. Power electronics are disposed in the tray. A plastic cap covers the tray. Electrical press-fit terminals are disposed along the periphery of the tray. Each electrical terminal has a press-fit pin portion that sticks up through a hole in the cap. In addition, the module includes four mechanical corner press-fit anchors disposed outside the tray. One end of each anchor is embedded into the housing. The other end is an upwardly extending press-fit pin portion. The module is manufactured and sold with the press-fit pin portions of the electrical terminals and the mechanical corner anchors unattached to any printed circuit board (PCB). The mechanical anchors help to secure the module to a printed circuit board. Due to the anchors, screws or bolts are not needed to hold the module to the PCB.

公开(公告)号：US20170125322A1

公开(公告)日：2017-05-04

申请号：US15224588

申请日：2016-07-31

申请人： IXYS Corporation

发明人： Thomas Spann ,  Ira Balaj-Loos

IPC分类号： H01L23/373 ,  H01L25/07 ,  H01L23/00

CPC分类号： H01L23/3735 ,  H01L23/057 ,  H01L23/24 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5381 ,  H01L23/5385 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and through a second bonding wire. The strip-shaped island of the bridging DMB serves as a section of the overall electrical path. Another bonding wire of a separate electrical path passes transversely over the strip-shaped island without any wire crossing any other wire. Use of the bridging DMB promotes bonding wire mechanical strength as well as heat sinking from bonding wires down to the substrate DMB.

公开(公告)号：US10000423B1

公开(公告)日：2018-06-19

申请号：US15088088

申请日：2016-03-31

申请人： IXYS Corporation

发明人： Thomas Spann

IPC分类号： C04B37/00 ,  B23K1/20 ,  C04B37/02

CPC分类号： C04B37/021 ,  B23K1/20 ,  C04B37/026 ,  C04B2235/6584 ,  C04B2235/945 ,  C04B2237/086 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/407 ,  C04B2237/54 ,  C04B2237/592 ,  C04B2237/64 ,  C04B2237/704

摘要： Top and bottom metal plates of a DMB panel stack are simultaneously direct-bonded to the central ceramic sheet in a single high-temperature step. During this step, the DMB panel rests on an array of very small upwardly projecting ceramic contacts of a ceramic carrier. An amount of unoxidized carbon (e.g., a layer of graphite) is disposed on each contact projection such that an amount of carbon is disposed between the top of the contact projection and the metal oxide skin of the bottom metal plate. The carbon bonds with oxygen from the metal oxide skin, thereby preventing connection or direct-bonding of the ceramic contact projection to the second metal plate. This reduces imperfections in the metal of the bottom plate and reduces the amount of ceramic particles bonded to metal at contact sites. As a result, less post-bonding processing is required to make a high quality DMB substrate.

公开(公告)号：US20170316993A1

公开(公告)日：2017-11-02

申请号：US15376662

申请日：2016-12-13

申请人： IXYS Corporation

发明人： Thomas Spann

IPC分类号： H01L23/049 ,  H01L23/367 ,  H01L23/32 ,  H01L23/492 ,  H01L23/08

CPC分类号： H01L23/049 ,  H01L23/10 ,  H01L23/4006 ,  H01L25/072 ,  H01R12/52 ,  H01R12/585

摘要： A power semiconductor device module includes a metal baseplate and a plastic housing that together form a tray. Power electronics are disposed in the tray. A plastic cap covers the tray. Electrical press-fit terminals are disposed along the periphery of the tray. Each electrical terminal has a press-fit pin portion that sticks up through a hole in the cap. In addition, the module includes four mechanical corner press-fit anchors disposed outside the tray. One end of each anchor is embedded into the housing. The other end is an upwardly extending press-fit pin portion. The module is manufactured and sold with the press-fit pin portions of the electrical terminals and the mechanical corner anchors unattached to any printed circuit board (PCB). The mechanical anchors help to secure the module to a printed circuit board. Due to the anchors, screws or bolts are not needed to hold the module to the PCB.

公开(公告)号：US20130252381A1

公开(公告)日：2013-09-26

申请号：US13874479

申请日：2013-04-30

申请人： IXYS Corporation

发明人： Thomas Spann ,  Holger Ostmann ,  Kang Rim Choi

IPC分类号： H01L21/56

CPC分类号： H01L23/4006 ,  H01L21/52 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/97 ,  H01L2023/4031 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2224/48091 ,  H01L2224/49113 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A packaged power semiconductor device is provided with voltage isolation between a metal backside and terminals of the device. The packaged power semiconductor device is arranged in an encapsulant defining a hole for receiving a structure for physically coupling the device to an object. A direct-bonded copper (“DBC”) substrate is used to provide electrical isolation and improved thermal transfer from the device to a heatsink. At least one power semiconductor die is mounted to a first metal layer of the DBC substrate. The first metal layer spreads heat generated by the semiconductor die. In one embodiment, the packaged power semiconductor device conforms to a TO-247 outline and is capable of receiving a screw for physically coupling the device to a heatsink.

摘要翻译： 封装的功率半导体器件在金属背面和器件的端子之间提供电压隔离。 封装的功率半导体器件被布置在限定孔的密封剂中，用于接收用于将器件物理耦合到物体的结构。 直接键合铜（“DBC”）基板用于提供电气隔离和改善从器件到散热片的热传递。 至少一个功率半导体管芯安装在DBC衬底的第一金属层上。 第一金属层扩散由半导体管芯产生的热量。 在一个实施例中，封装的功率半导体器件符合TO-247概要，并且能够接收用于将器件物理耦合到散热器的螺钉。

公开(公告)号：US09640461B1

公开(公告)日：2017-05-02

申请号：US15224588

申请日：2016-07-31

申请人： IXYS Corporation

发明人： Thomas Spann ,  Ira Balaj-Loos

IPC分类号： H01L23/373 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/3735 ,  H01L23/057 ,  H01L23/24 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5381 ,  H01L23/5385 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and through a second bonding wire. The strip-shaped island of the bridging DMB serves as a section of the overall electrical path. Another bonding wire of a separate electrical path passes transversely over the strip-shaped island without any wire crossing any other wire. Use of the bridging DMB promotes bonding wire mechanical strength as well as heat sinking from bonding wires down to the substrate DMB.

公开(公告)号：US20180286778A1

公开(公告)日：2018-10-04

申请号：US15476976

申请日：2017-04-01

申请人： IXYS Corporation

发明人： Thomas Spann

IPC分类号： H01L23/367 ,  H01L23/495 ,  H01L21/48 ,  H01L23/34 ,  H01L23/32 ,  H01L23/38

CPC分类号： H01L23/32 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/4006 ,  H01L25/07 ,  H01L2023/405 ,  H01L2023/4068

摘要： A power semiconductor device module includes, among other parts, a DMB structure. The DMB structure includes a ceramic sheet, a top metal plate that is directly bonded to the top of the ceramic, and a bottom metal plate that is directly bonded to the bottom of the ceramic. A power semiconductor device die is attached to the top metal plate. The bottom surface of the bottom metal plate has a plurality small cavities. When the bottom metal plate is attached to another metal member, a material between the plate and the member (for example, thermal grease or a PCM or solder) is forced into the cavities. This results in an improvement in thermal transfer between the plate and the member. Such cavities can alternatively, or in addition, be included on a metal surface other than a DMB, such as the bottom surface of a baseplate of the module.

公开(公告)号：US09929066B1

公开(公告)日：2018-03-27

申请号：US15378011

申请日：2016-12-13

申请人： IXYS Corporation

发明人： Thomas Spann

IPC分类号： H01L23/34 ,  H01L23/057 ,  H01L23/367 ,  H01L21/52 ,  H01L23/08 ,  H01L21/48 ,  H01L23/40

CPC分类号： H01L21/4882 ,  H01L21/52 ,  H01L23/04 ,  H01L23/053 ,  H01L23/08 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/4006

摘要： The baseplate of a power semiconductor device module makes reliable and superior thermal contact with a heatsink when fixed to the heatsink. The baseplate includes a rectangular plate portion, a first downward-extending peripheral heel extension portion, and a second downward-extending peripheral heel extension portion. In one example, the plate portion has four mounting holes for receiving mounting bolts. There is one mounting hole located adjacent each of four corners of the rectangular plate portion. The central portion of the bottom surface of the plate portion has a slightly convex downward shape. The strip-shaped first heel extension portion extends along a first edge of the bottom surface. The strip-shaped second heel extension portion extends along a second edge of the bottom surface opposite the first edge. Each of the first and second heel extension portions extends downward from the bottom surface for a distance of between thirty and five hundred microns.

公开(公告)号：US09443792B1

公开(公告)日：2016-09-13

申请号：US14929308

申请日：2015-10-31

申请人： IXYS Corporation

发明人： Thomas Spann ,  Ira Balaj-Loos

IPC分类号： H01L23/495

CPC分类号： H01L23/3735 ,  H01L23/057 ,  H01L23/24 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5381 ,  H01L23/5385 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and through a second bonding wire. The strip-shaped island of the bridging DMB serves as a section of the overall electrical path. Another bonding wire of a separate electrical path passes transversely over the strip-shaped island without any wire crossing any other wire. Use of the bridging DMB promotes bonding wire mechanical strength as well as heat sinking from bonding wires down to the substrate DMB.

摘要翻译： 功率模块包括基板DMB（Direct Metal Bonded）。 新型桥接DMB与功率半导体器件芯片一起表面安装到衬底DMB。 桥接DMB的顶部金属层具有一个或多个岛，键合线可以连接到该岛。 在一个示例中，电路径从模块端子延伸穿过第一接合线并且穿过岛状的第一位置延伸到第二位置，并且从第二位置延伸穿过第二接合线。 桥接DMB的带状岛作为整个电路的一部分。 单独的电路径的另一个接合线横向穿过条形岛，而没有任何线穿过任何其他线。 使用桥接DMB可以提高接合线的机械强度以及从接合线到基板DMB的散热。

公开(公告)号：US09177888B2

公开(公告)日：2015-11-03

申请号：US14556940

申请日：2014-12-01

申请人： IXYS Corporation

发明人： Thomas Spann ,  Holger Ostmann ,  Kang Rim Choi

IPC分类号： H01L21/56 ,  H01L23/40 ,  H01L23/31 ,  H01L23/373 ,  H01L23/433 ,  H01L23/495 ,  H01L23/00 ,  H01L21/52

CPC分类号： H01L23/4006 ,  H01L21/52 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/97 ,  H01L2023/4031 ,  H01L2023/405 ,  H01L2023/4087 ,  H01L2224/48091 ,  H01L2224/49113 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A packaged power semiconductor device is provided with voltage isolation between a metal backside and terminals of the device. The packaged power semiconductor device is arranged in an encapsulant defining a hole for receiving a structure for physically coupling the device to an object. A direct-bonded copper (“DBC”) substrate is used to provide electrical isolation and improved thermal transfer from the device to a heatsink. At least one power semiconductor die is mounted to a first metal layer of the DBC substrate. The first metal layer spreads heat generated by the semiconductor die. In one embodiment, the packaged power semiconductor device conforms to a TO-247 outline and is capable of receiving a screw for physically coupling the device to a heatsink.

摘要翻译： 封装的功率半导体器件在金属背面和器件的端子之间提供电压隔离。 封装的功率半导体器件被布置在限定孔的密封剂中，用于接收用于将器件物理耦合到物体的结构。 直接键合铜（“DBC”）基板用于提供电气隔离和改善从器件到散热片的热传递。 至少一个功率半导体管芯安装在DBC衬底的第一金属层上。 第一金属层扩散由半导体管芯产生的热量。 在一个实施例中，封装的功率半导体器件符合TO-247概要，并且能够接收用于将器件物理耦合到散热器的螺钉。