Abstract:
A method for inspection of a sample having a surface layer. The method includes acquiring a first reflectance spectrum of the sample while irradiating the sample with a collimated beam of X-rays, and processing the first reflectance spectrum to measure a diffuse reflection property of the sample. A second reflectance spectrum of the sample is acquired while irradiating the sample with a converging beam of the X-rays. The second reflectance spectrum is analyzed using the diffuse reflection property so as to determine a characteristic of the surface layer of the sample.
Abstract:
A method for X-ray analysis of a sample includes directing a beam of X-rays to impinge on an area of a periodic feature on a surface of the sample and receiving the X-rays scattered from the surface in a reflection mode so as to detect a spectrum of diffraction in the scattered X-rays as a function of azimuth. The spectrum of diffraction is analyzed in order to determine a dimension of the feature.
Abstract:
A method for testing a surface of a sample includes irradiating the surface at a grazing incidence with a beam of radiation having a focal region, whereby the radiation is reflected from the surface. At least one of the focal region and the sample is adjusted through a plurality of adjustment stages within an adjustment range so as to vary a location of the focal region relative to the surface. Respective angular profiles of the radiation reflected from the surface are measured at the plurality of adjustment stages, and the angular profiles are compared in order to select an adjustment within the range at which the surface is in a desired alignment with the beam.
Abstract:
A method for testing a surface includes finding respective first and second critical angles for total external reflection of radiation from an area of the surface at first and second wavelengths. The first and second critical angles are compared to determine an orientation of a tangent to the surface in the area.
Abstract:
A method for measurement of critical dimensions includes irradiating a surface of a substrate with a beam of X-rays. A pattern of the X-rays scattered from the surface due to features formed on the surface is detected and analyzed to measure a dimension of the features in a direction parallel to the surface.
Abstract:
A method and apparatus are described for cleaving a relatively thin semiconductor wafer for inspecting a target feature on a workface thereof by: producing, on a first lateral face of the semiconductor wafer, laterally of the workface on one side of the target feature, an indentation in alignment with the target feature; and inducing by impact, in a second lateral face of the semiconductor wafer, laterally of the workface on the opposite side of the target feature, a shock wave substantially in alignment with the target feature and the indentation on the first lateral face, to split the semiconductor wafer along a cleavage plane essentially coinciding with the target feature and the indentation.
Abstract:
Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.
Abstract:
A method for inspection includes irradiating a sample using an X-ray beam, which is focused so as to define a spot on a surface of the sample. At least one of the sample and the X-ray beam is shifted so as to scan the spot along a scan path that crosses a feature on the surface. Respective intensities of X-ray fluorescence emitted from the sample responsively to the X-ray beam are measured at a plurality of locations along the scan path, at which the spot has different, respective degrees of overlap with the feature. The intensities measured at the plurality of the locations are processed in order to compute an adjusted value of the emitted X-ray fluorescence over the scan path. A thickness of the feature is estimated based on the adjusted value.
Abstract:
A computer-implemented method for inspection of a sample includes defining a plurality of locations on a surface of the sample, irradiating the surface at each of the locations with a beam of X-rays, and measuring an angular distribution of the X-rays that are emitted from the surface responsively to the beam, so as to produce a respective plurality of X-ray spectra. The X-ray spectra are analyzed to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective locations. One or more locations are selected out of the plurality of locations responsively to the figures-of-merit, and a property of the sample is estimated using the X-ray spectra measured at the selected locations.
Abstract:
A method for inspection includes irradiating a sample using an X-ray beam, which is focused so as to define a spot on a surface of the sample. At least one of the sample and the X-ray beam is shifted so as to scan the spot along a scan path that crosses a feature on the surface. Respective intensities of X-ray fluorescence emitted from the sample responsively to the X-ray beam are measured at a plurality of locations along the scan path, at which the spot has different, respective degrees of overlap with the feature. The intensities measured at the plurality of the locations are processed in order to compute an adjusted value of the emitted X-ray fluorescence over the scan path. A thickness of the feature is estimated based on the adjusted value.