Abstract:
A resistive memory device may include a substrate, gate electrode structures, a first impurity region, a second impurity region, a first metal silicide pattern and a second metal silicide pattern. The substrate may have a first region where isolation patterns and first active patterns may be alternately arranged in a first direction, and a second region where linear second active patterns may be extended in the first direction. The gate electrode structures may be arranged between the first region and the second region of the substrate. The first and second impurity regions may be formed in the first and second impurity regions. The first metal silicide pattern may have an isolated shape configured to make contact with an upper surface of the first impurity region. The second metal silicide pattern may make contact with an upper surface of the second impurity region.
Abstract:
The image scanning apparatus includes a light source including at least one light emitting diode (LED) to irradiate light to a document which is a scan target, a light source control unit to control a lighting-up point of time of the light source, an image sensor to transform an image formed by light reflected from the document into an electric signal according to a result of controlling the lighting-up point of time, and an output unit to output image data corresponding to the transformed electric signal.
Abstract:
An illuminator of a door outside handle for a vehicle may perform both a function of a light source and a light guiding function. The illuminator may further employ a light guide having a mood lamp function on an inner surface of the door outside handle and a top LED combined with the light guide to illuminate the outer panel together with the illuminator, making it possible to enhance a product value due to realization of various illumination effects. The illuminator of a door outside handle for a vehicle can be turned on or off through various operation logics by employing multiple different illumination methods where lights of different colors can be realized according to the operation condition, making it possible to enhance product value.
Abstract:
Methods of fabricating integrated circuit devices include forming a trench in a face of an integrated circuit substrate. The trench has a trench sidewall and a trench floor. The method further including forming a first insulating layer on the trench sidewall that exposes at least part of the trench floor and forming a conductive plug in the trench on the trench floor. The conductive plug is electrically connected to the substrate at the trench floor through the trench sidewall that exposes the at least part of the trench floor. The conductive plug also has a plug top opposite the trench floor that is recessed beneath the face of the substrate. The method further includes forming a second insulating layer on the plug top.
Abstract:
A method for forming a shallow well of a semiconductor device using low-energy ion implantation is described. A well region is formed to the depth of a trench isolation layer using a low-energy, high-dose ion implantation process. The method for forming a well using low-energy ion implantation can minimize well margin reduction caused by impurity spread and well margin reduction caused by shrinkage of a thick photoresist pattern.
Abstract:
Integrated circuit devices include an integrated circuit substrate having a face and a trench in the face. The trench has a trench sidewall and a trench floor. A first insulating layer is provided on the trench sidewall that exposes at least part of the trench floor and a conductive plug is provided in the trench on the trench floor. The conductive plug is electrically connected to the substrate at the trench floor through the trench sidewall that exposes the at least part of the trench floor. The conductive plug also has a plug top opposite the trench floor that is recessed beneath the face of the substrate. A second insulating layer is provided on the plug top. Methods of fabricating integrated circuit devices include forming a trench in a face of an integrated circuit substrate. The trench has a trench sidewall and a trench floor. The method further including forming a first insulating layer on the trench sidewall that exposes at least part of the trench floor and forming a conductive plug in the trench on the trench floor. The conductive plug is electrically connected to the substrate at the trench floor through the trench sidewall that exposes the at least part of the trench floor. The conductive plug also has a plug top opposite the trench floor that is recessed beneath the face of the substrate. The method further includes forming a second insulating layer on the plug top.
Abstract:
This disclosure generally relates to various directional input units of a mobile communication terminal, where such directional input units receive a single user input or multiple concurrent user inputs and then acquires at least one selecting (user) sub-input therefrom while a terminal is in its powered-off state or its off-state. After acquiring the selecting user sub-input, a terminal runs at least one pre-selected operation which is selected from a set of multiple pre-selected operations and which matches the selecting user sub-input when a terminal powers on from its powered-off state or wakes up from its off-state. A directional input unit may acquire the selecting user sub-input from a movement of at least a portion thereof, a contact between at least a portion thereof and a user body part, or the like. As a result, a terminal can provide a user with more seamless operations.
Abstract:
This disclosure relates to various configurations or methods of displaying push information such as a number or a substance of push information which is received by an app implemented to a data processing terminal such as a smartphone. More particularly, this disclosure relates to various methods of creating and using (1) an unread content which a sender selects a user as a labeled receiver but the user has not yet confirmed or read), and (2) a labeled icon badge which can represent a number of such unread labeled contents or a substance of such labeled contents. This disclosure also relates to various methods of creating and using a labeled icon badge which can distinguish a labeled content from an unlabeled content, where the labeled content is the one with more need for a user to confirm and where the unlabeled content is the one with less need for a user to confirm.
Abstract:
An integrated circuit (IC) device may include a single substrate that includes a single chip, and a plurality of memory cells spaced apart from one another on the substrate and having different structures. Manufacturing the IC device may include forming a plurality of first word lines in a first region of the substrate, and forming a plurality of second word lines in or on a second region of the substrate. Capacitors may be formed on the first word lines. Source lines may be formed on the second word lines. An insulation layer that covers the plurality of capacitors and the plurality of source lines may be formed in the first region and the second region. A variable resistance structure may be formed at a location spaced apart from an upper surface of the substrate by a first vertical distance, in the second region.
Abstract:
An integrated circuit (IC) device may include a single substrate that includes a single chip, and a plurality of memory cells spaced apart from one another on the substrate and having different structures. Manufacturing the IC device may include forming a plurality of first word lines in a first region of the substrate, and forming a plurality of second word lines in or on a second region of the substrate. Capacitors may be formed on the first word lines. Source lines may be formed on the second word lines. An insulation layer that covers the plurality of capacitors and the plurality of source lines may be formed in the first region and the second region. A variable resistance structure may be formed at a location spaced apart from an upper surface of the substrate by a first vertical distance, in the second region.