公开(公告)号：US08349647B2

公开(公告)日：2013-01-08

申请号：US13064080

申请日：2011-03-04

Applicant: Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/00

CPC classification number: H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/7869

Abstract: A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

Abstract translation: TFT包括具有多个半导体层的基于氧化锌（ZnO）的沟道层。 多个半导体层的最上部的Zn浓度比下半导体层的Zn浓度低，以抑制由于等离子体引起的氧空位。 沟道层的最上半导体层还具有对等离子体具有相对稳定的结合能的锡（Sn）氧化物，氯化物，氟化物等。 最高的半导体层相对于等离子体冲击相对较强，当暴露于等离子体时分解较少，从而抑制载流子浓度的增加。

公开(公告)号：US08158976B2

公开(公告)日：2012-04-17

申请号：US12659153

申请日：2010-02-26

Applicant: Kyoung-seok Son ,  Jang-yeon Kwon ,  Hyoung-sub Kim ,  Hoo-jeong Lee ,  Mi-ran Moon ,  Kyung Park

Inventor： Kyoung-seok Son ,  Jang-yeon Kwon ,  Hyoung-sub Kim ,  Hoo-jeong Lee ,  Mi-ran Moon ,  Kyung Park

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer.

Abstract translation: 示例性实施例涉及薄膜晶体管（TFT）及其制造方法。 根据示例性实施例的薄膜晶体管可以包括栅极，栅极绝缘层，包括第一氧化物半导体层和第二氧化物半导体层的沟道层，以及在沟道层的相对侧上的源极和漏极。 与第二氧化物半导体层相比，第一氧化物半导体层可以具有相对较大的晶粒。

公开(公告)号：US07871872B2

公开(公告)日：2011-01-18

申请号：US11876650

申请日：2007-10-22

Applicant: Jong-man Kim ,  Kyung-bae Park ,  Jang-yeon Kwon ,  Ji-sim Jung

Inventor： Jong-man Kim ,  Kyung-bae Park ,  Jang-yeon Kwon ,  Ji-sim Jung

IPC: H01L21/84

CPC classification number: H01L29/78621 ,  H01L29/66757

Abstract: Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.

Abstract translation: 提供一种制造薄膜晶体管的方法，该方法包括：在衬底上形成非晶硅层; 通过使非晶硅层结晶而形成多晶硅层; 形成掩模所述多晶硅的一部分的掩模结构; 在所述多晶硅层中形成源极和漏极区域以及介于所述源极和漏极区域之间的沟道区域; 使用离子束注入将具有第一浓度的杂质注入未被掩模结构覆盖的多晶硅层的一端和另一端。 然后对其上具有掩模的多晶硅层的端部进行离子轰击以增加源极和漏极区域中的杂质的水平，同时缩小掩模区域的尺寸。

公开(公告)号：US20100321279A1

公开(公告)日：2010-12-23

申请号：US12591914

申请日：2009-12-04

Applicant: Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

Inventor： Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

IPC: G09G3/30 ,  H01L29/12 ,  H01L29/786 ,  G09G3/20

CPC classification number: H01L29/7869 ,  H01L27/3272

Abstract: Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor.

Abstract translation: 公开了晶体管，电子器件及其制造方法，晶体管包括沟道层和栅极绝缘层之间的光弛豫层，以抑制由于光引起的晶体管的特性变化。 光弛豫层可以是能够抑制由于光引起的晶体管的阈值电压的变化的材料层。 光弛豫层可以含有氧化铝（Al）等金属氧化物。 沟道层可以含有氧化物半导体。

公开(公告)号：US20100276683A1

公开(公告)日：2010-11-04

申请号：US12659837

申请日：2010-03-23

Applicant: Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

Inventor： Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

IPC: H01L29/786 ,  H01L29/22

CPC classification number: H01L29/7869

Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Abstract translation: 提供了包括氧化物半导体的氧化物半导体和氧化物薄膜晶体管。 氧化物半导体可以由其中含有铪（Hf）的铟（In） - 锌（Zn）氧化物形成，其中以预定或给定的组成比包含In，Zn和Hf。

公开(公告)号：US07799625B2

公开(公告)日：2010-09-21

申请号：US11856251

申请日：2007-09-17

Applicant: Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

Inventor： Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

IPC: H01L21/84

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

Abstract translation: 有机电致发光显示器及其制造方法包括有机发光二极管，驱动有机发光二极管的驱动晶体管和控制驱动晶体管的操作的开关晶体管，其中开关的有源层 并且使用具有不同密度的硅化物使驱动晶体管结晶，使得驱动晶体管的有源层具有比开关层的有源层更大的晶粒尺寸。

公开(公告)号：US07767505B2

公开(公告)日：2010-08-03

申请号：US12153651

申请日：2008-05-22

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: H01L21/84

CPC classification number: H01L29/7869 ,  H01L29/66969

Abstract: Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

Abstract translation: 提供了制造氧化物半导体薄膜晶体管的方法。 所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。 可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。 源极和漏极可以形成在沟道层的相对侧上。 所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。

公开(公告)号：US07745314B2

公开(公告)日：2010-06-29

申请号：US11692236

申请日：2007-03-28

Applicant: Kyung-bae Park ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

IPC: H01L21/20

CPC classification number: H01L21/3221 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02667

Abstract: A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H2, Ar, He, Xe, O2, and the like present in the silicon thin film so as to remove the impurities from the silicon thin film. A wavelength of the microwaves is equal to a natural frequency of an element of an object to be removed. According to a resonance of impurities induced by microwaves, the impurities can be very effectively removed from the silicon thin film so as to obtain a high quality silicon thin film. In particular, the microwaves are very suitable to be used in the manufacture of silicon thin films at low temperature.

Abstract translation: 对薄层进行脱气的方法和制造硅薄膜的方法包括将微波施加到沉积在基板上的硅薄膜，以引起存在于其中的H 2，Ar，He，Xe，O 2等杂质的共振 硅薄膜，以从硅薄膜中除去杂质。 微波的波长等于要去除的物体的元素的固有频率。 根据由微波引起的杂质的共振，可以非常有效地从硅薄膜除去杂质，从而获得高质量的硅薄膜。 特别地，微波非常适用于在低温下制造硅薄膜。

公开(公告)号：US07700954B2

公开(公告)日：2010-04-20

申请号：US11621627

申请日：2007-01-10

Applicant: Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

Inventor： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

Abstract: A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

Abstract translation: 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US07648866B2

公开(公告)日：2010-01-19

申请号：US11958719

申请日：2007-12-18

Applicant: Ji-sim Jung ,  Jung-seok Hahn ,  Sang-yoon Lee ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

Inventor： Ji-sim Jung ,  Jung-seok Hahn ,  Sang-yoon Lee ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

IPC: H01L21/00

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/3262

Abstract: Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes. The method includes: forming an amorphous silicon layer including a first amorphous region and a second amorphous region disposed on the same plane of a substrate; forming an SAM (self-assembled monolayer) having a hydrophobic property on the first amorphous region; coating an aqueous solution in which nickel particles are dispersed, on the second amorphous region and the SAM, wherein a larger amount of nickel particles than on the SAM are dispersed on the second amorphous region using a hydrophilicity difference between the second amorphous region and the SAM; vaporizing the SAM through an annealing process and simultaneously performing metal induced crystallization in which the nanoparticles are used as a medium, to crystallize the first and second amorphous regions and to form first and second crystallization regions; patterning the first and second crystallization regions to form first and second channel regions; and forming first and second electrodes on the first and second channel regions.

Abstract translation: 提供一种制造有机发光显示器的单位像素的驱动装置的方法，该有机发光显示器具有改进的制造工艺，其中驱动装置可以以较少的工艺和更简单的工艺制造。 该方法包括：形成包括设置在基板的同一平面上的第一非晶区和第二非晶区的非晶硅层; 在第一非晶区上形成具有疏水性的SAM（自组装单层）; 在所述第二非晶区域和所述SAM上涂覆其中分散有镍颗粒的水溶液，其中比所述SAM上更大量的所述镍颗粒分散在所述第二非晶区域上，使用所述第二非晶区域和所述SAM之间的亲水性差异 ; 通过退火工艺蒸发SAM，同时进行金属诱导结晶，其中纳米颗粒用作介质，使第一和第二非晶区域结晶并形成第一和第二结晶区域; 图案化第一和第二结晶区域以形成第一和第二通道区域; 以及在所述第一和第二通道区域上形成第一和第二电极。