Abstract:
Three-dimensional structures are provided which improve manufacturing yield for certain structures in semiconductor devices. The three-dimensional structures take into account the interaction between an upper layer and a lower layer where the lower layer has a tendency to form a non-planar surface due to its design. Accordingly, design changes are performed to make structures more likely to function, either by forming a more planar surface on the lower layer or by compensating in the upper layer for the lack of planarity. The changes to improve manufacturing yield are made at the design stage rather than at the fabrication stage.
Abstract:
A method, system and program product for merging cloned and original circuit shapes such that a union thereof does not include a notch. The invention determines, for a cell including an original circuit shape and at least one overlapping clone of the original circuit shape, whether each clone corner point of each overlapping clone is within a threshold distance of a corresponding original corner point of the original circuit shape; and generates, in the case that each clone corner point of each overlapping clone circuit shape is within a threshold distance, a union of each overlapping clone and the original circuit shape such that the union does not contain a notch. The union is generated using a point code that sets a new position for a union corner point to remove a notch based on the original shape's direction and the edge orientations previous to and next to the corner point.
Abstract:
A method, and computer readable medium for the dynamic CPU (Central Processing Unit) usage and function call tracing on a target application. The setup of the tracing uses a -pg like solution, and is implemented using the DPCL (Dynamic Probe Class Library). The output is presented in a gmon.out format, which allows the use of popular analysis tools. The program being traced need not be recompiled or re-linked. This is particularly important if the source code is not available. The dynamic feature allows for different choices of profiling and the choice can even be changed once the target application is running.
Abstract:
A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
Abstract:
A method, apparatus, system, and computer program product that performs yield estimates using critical area analysis on integrated circuits having redundant and non-redundant elements. The non-redundant elements are ignored or removed from the critical area analysis performed for undesired opens.
Abstract:
Disclosed is a method that predicts test yield for a semiconductor product, prior to design layout. This is accomplished by applying a critical area analysis to individual library elements that are used to form a specific product and by estimating the test yield impact of combining these library elements. For example, the method considers the test yield impact of sensitivity to library element to library element shorts and the test yield impact of sensitivity to wiring faults. The disclosed method further allows die size growth to be traded off against the use of library elements with higher test yield in order to provide an optimal design solution. Thus, the method may be used to modify library element selection so as to optimize test yield. Lastly, the method further repeats itself at key design checkpoints to revalidate initial test yield (and cost) assumptions made when the product was quoted to a customer. Thus, the method provides increased accuracy of test yield estimate from initial sizing through design and further allows designs to be modified to improve test yield.
Abstract:
An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and Fourth wires form a path between the first and second wires redundant to the first via.
Abstract:
A method is provided to convert commercial microprocessors to radiation-hardened processors and, more particularly, a method is provided to modify a commercial microprocessor for radiation hardened applications with minimal changes to the technology, design, device, and process base so as to facilitate a rapid transition for such radiation hardened applications. The method is implemented in a computing infrastructure and includes evaluating a probability that one or more components of an existing commercial design will be affected by a single event upset (SEU). The method further includes replacing the one or more components with a component immune to the SEU to create a final device.
Abstract:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.
Abstract:
Disclosed are embodiments of a method, service, and computer program product for performing yield-aware IC routing for a design. The method performs an initial global routing which satisfies wiring congestion constraints. Next, the method performs wire spreading and wire widening on the global route, layer by layer, based on, for example, a quadratic congestion optimization. Following this, timing closure is performed on the global route using results of the wire spreading and wire widening. Post-routing wiring width and wire spreading adjustments are made using the critical area yield model. In addition, the method allows for the optimization of already-routed data.