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27 条记录 (耗时 0.014 秒)

    Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates
    21.
    发明申请
    Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates 有权
    选择性光增强湿氧化氮化层在基板上再生的方法

    公开(公告)号：US20120264246A1

    公开(公告)日：2012-10-18

    申请号：US13086663

    申请日：2011-04-14

    申请人： Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

    发明人： Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

    IPC分类号： H01L31/18 ,  H01L21/205

    CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/06

    摘要： Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

    摘要翻译： 本公开的各种实施方案涉及对衬底上的氮化物层再生长的选择性光增强湿氧化。 一方面，一种方法可以包括：在衬底的第一表面上形成具有第一低带隙能的第一III族氮化物层; 在所述第一III族氮化物层上形成具有第一高带隙能的第二III族氮化物层; 通过光增强湿氧化将第一III-氮化物层的部分转变成多个III-氧化物条; 在所述III氧化物条之间的所述第二III族氮化物层上形成具有第二低带隙能量的多个III族氮化物纳米线; 并且通过选择性光增强氧化将至少一些III族氮化物纳米线选择性地转化为III族氧化物纳米线。

    Bi-directional read/program non-volatile floating gate memory array, and method of formation
    23.
    发明申请
    Bi-directional read/program non-volatile floating gate memory array, and method of formation 有权
    双向读/写非挥发性浮栅存储器阵列及其形成方法

    公开(公告)号：US20070069275A1

    公开(公告)日：2007-03-29

    申请号：US11239791

    申请日：2005-09-29

    申请人： Felix Tsui ,  Jeng-Wei Yang ,  Bomy Chen ,  Chun-Ming Chen ,  Dana Lee ,  Changyuan Chen

    发明人： Felix Tsui ,  Jeng-Wei Yang ,  Bomy Chen ,  Chun-Ming Chen ,  Dana Lee ,  Changyuan Chen

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7887 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42328 ,  H01L29/42336

    摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate. An array of such memory cells comprises rows of cells in active regions adjacent to one another separated from one another by the semiconductive substrate material without any isolation material. Cells in the same column have the source/drain region in common, the drain/source region in common and a first and second control gates in each of the trenches in common. Cells in adjacent columns have the source/drain in common and the first control gate in common.

    摘要翻译： 双向读/写非易失性存储单元和阵列能够实现高密度。 每个存储单元具有两个间隔开的浮动栅极，用于在其上存储电荷。 电池具有间隔开的源极/漏极区域，其间具有沟道，沟道具有三个部分。 浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上，栅电极控制第一和第二部分之间的第三部分中的沟道的导通。 控制栅极连接到每个源极/漏极区域，并且还电容耦合到浮动栅极。 通过热通道电子注入的电池程序，并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。 双向读取允许将单元编程为存储位，每个浮动栅极中有一位。 这种存储单元的阵列包括彼此相邻的活性区域中的细胞排，所述活性区域通过没有任何隔离材料的半导体衬底材料彼此分开。 相同列中的单元具有共同的源极/漏极区域，共同的漏极/源极区域以及每个沟槽中的第一和第二控制栅极共同。 相邻列中的单元具有共同的源极/漏极，第一个控制栅极共同。

    Blood conduit with stent
    24.
    发明授权
    Blood conduit with stent 有权

    公开(公告)号：US11612475B2

    公开(公告)日：2023-03-28

    申请号：US16340645

    申请日：2017-10-10

    申请人： Jeng Wei ,  Tai-Yen Sun

    发明人： Jeng Wei

    IPC分类号： A61F2/07

    摘要： A blood conduit with stent has a flexible conduit body and an expandable stent structure. The conduit body has a first opening end through which only an inflow of a blood enters and a second opening end through which only an outflow of the blood leaves. The stent structure includes a plurality of threads adhered to the conduit body and expands in directions intersecting an axial direction of the conduit body. A boundary of one of the threads of the stent structure closest to the second opening end is away from the second opening end with a predetermined distance, thereby preventing blood back flow into the false lumen via a new tear.

    Light emitting diode with large viewing angle and fabricating method thereof
    26.
    发明授权
    Light emitting diode with large viewing angle and fabricating method thereof 有权
    具有大视角的发光二极管及其制造方法

    公开(公告)号：US08487325B2

    公开(公告)日：2013-07-16

    申请号：US13351648

    申请日：2012-01-17

    申请人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

    发明人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/20 ,  H01L33/0012 ,  H01L33/0062 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

    摘要翻译： 发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。 这些柱结构形成在基板上。 每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。 在基板上形成第一类型的半导体层。 柱结构通过第一类型半导体层彼此电连接。 填料结构形成在柱结构之间。 柱结构的填充结构和第二类型半导体层被透明导电层覆盖。 第一电极与透明导电层接触。 第二电极与第一类型半导体层接触。