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21.发明授权In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N 有权非极性和半极性（Al，Ga，In）N的原位缺陷还原技术公开(公告)号：US07723216B2
公开(公告)日：2010-05-25
申请号：US11801283
申请日：2007-05-09
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，以及（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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22.发明授权Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管公开(公告)号：US09040327B2
公开(公告)日：2015-05-26
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/06 , H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/02 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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公开(公告)号：US08716048B2
公开(公告)日：2014-05-06
申请号：US12775119
申请日：2010-05-06
申请人： Gyu Beom Kim , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
发明人： Gyu Beom Kim , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/32 , H01S5/3063 , H01S5/3216 , H01S5/34333 , H01S2304/04
摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。
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公开(公告)号：US08716046B2
公开(公告)日：2014-05-06
申请号：US12535244
申请日：2009-08-04
申请人： Gyu Beom Kim , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
发明人： Gyu Beom Kim , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/32 , H01S5/3063 , H01S5/3216 , H01S5/34333 , H01S2304/04
摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
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25.发明授权公开(公告)号：US08183072B2
公开(公告)日：2012-05-22
申请号：US12624011
申请日：2009-11-23
申请人： Won Cheol Seo , Kwang Choong Kim , Kyung Hee Ye
发明人： Won Cheol Seo , Kwang Choong Kim , Kyung Hee Ye
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L27/156
摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.
摘要翻译： 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。
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26.发明申请LIGHT EMITTING DEVICE HAVING PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 有权具有非极性发光电池的多重性的发光装置及其制造方法公开(公告)号：US20120104424A1
公开(公告)日：2012-05-03
申请号：US13345348
申请日：2012-01-06
申请人： Won Cheol SEO , Kwang Choong KIM , Kyung Hee YE
发明人： Won Cheol SEO , Kwang Choong KIM , Kyung Hee YE
CPC分类号： H01L33/007 , H01L27/156
摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.
摘要翻译： 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。
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27.发明授权In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N 有权非极性和半极性（Al，Ga，In）N的原位缺陷还原技术公开(公告)号：US08105919B2
公开(公告)日：2012-01-31
申请号：US12759903
申请日：2010-04-14
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，以及（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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公开(公告)号：US20080179607A1
公开(公告)日：2008-07-31
申请号：US12001227
申请日：2007-12-11
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/22 , H01S5/2201 , H01S5/2231 , H01S5/3404 , H01S5/34333
摘要： An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
摘要翻译： 一种（Al，Ga，In）N发光器件，例如发光二极管（LED），其中通过以非极性或半极性III氮化物晶体几何形状制造器件来实现高发光效率。 因为非极性和半极性发射器件具有比c面发射器件显着更低的压电效应，所以可以实现在更高电流密度下的更高效率的发射器件。
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29.发明授权In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N 有权非极性和半极性（Al，Ga，In）N的原位缺陷还原技术公开(公告)号：US08643024B2
公开(公告)日：2014-02-04
申请号：US13331973
申请日：2011-12-20
IPC分类号： H01L29/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，和（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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公开(公告)号：US20090291519A1
公开(公告)日：2009-11-26
申请号：US12535244
申请日：2009-08-04
申请人： Gyu Beom KIM , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
发明人： Gyu Beom KIM , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/32 , H01S5/3063 , H01S5/3216 , H01S5/34333 , H01S2304/04
摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
摘要翻译： 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层，通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。
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