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36 条记录 (耗时 0.022 秒)

    Chemically amplified silsesquioxane resist compositions
    21.
    发明授权
    Chemically amplified silsesquioxane resist compositions 有权
    化学扩增倍半硅氧烷抗蚀剂组合物

    公开(公告)号：US08426113B2

    公开(公告)日：2013-04-23

    申请号：US12856338

    申请日：2010-08-13

    申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    IPC分类号： G03F7/075 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

    CPC分类号： G03F7/0382 ,  G03F7/0757

    摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

    摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-取代的和取代的烷基。 β-和γ-取代的烷基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物生成并用电子束成像的抗蚀剂具有@ 60nm线/空间的分辨率。

    CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS
    22.
    发明申请
    CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS 有权
    化学放大硅烷氧化物组合物

    公开(公告)号：US20120040289A1

    公开(公告)日：2012-02-16

    申请号：US12856338

    申请日：2010-08-13

    申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0382 ,  G03F7/0757

    摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

    摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-和γ-取代的烷基。 取代基和取代基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物产生的并用电子束成像的抗蚀剂具有60nm线/空间的分辨率。

    Preparation of topcoat compositions and methods of use thereof
    27.
    发明授权
    Preparation of topcoat compositions and methods of use thereof 失效
    面漆组合物的制备及其使用方法

    公开(公告)号：US07473749B2

    公开(公告)日：2009-01-06

    申请号：US11159477

    申请日：2005-06-23

    申请人： Hiroshi Ito ,  Linda Karin Sundberg

    发明人： Hiroshi Ito ,  Linda Karin Sundberg

    IPC分类号： C07C69/52

    CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/11

    摘要： A topcoat composition that includes a fluorine-containing polymer and a casting solvent selected from an alcohol is provided. Also provided is a method of forming an image on a photoresist that includes forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.

    摘要翻译： 提供了包含含氟聚合物和选自醇的流延溶剂的面漆组合物。 还提供了在光致抗蚀剂上形成图像的方法，其包括在基板上形成光致抗蚀剂; 将面漆组合物，包含至少一种含氟聚合物和浇铸溶剂的面漆组合物涂覆到光致抗蚀剂上; 除去顶涂层组合物的浇铸溶剂，导致在光致抗蚀剂上形成顶涂层材料; 将光致抗蚀剂暴露于辐射，辐射改变暴露于辐射的光刻胶的区域的化学组成，在光致抗蚀剂中形成暴露和未曝光的区域; 并去除i）面漆材料和ii）光致抗蚀剂的曝光区域或光致抗蚀剂的未曝光区域。

    PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS
    28.
    发明申请
    PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS 有权
    用于光刻机工艺的光刻胶贴片

    公开(公告)号：US20080227028A1

    公开(公告)日：2008-09-18

    申请号：US12128171

    申请日：2008-05-28

    申请人： Robert David Allen ,  Rutnam Sooriyakumaran ,  Linda Karin Sundberg

    发明人： Robert David Allen ,  Rutnam Sooriyakumaran ,  Linda Karin Sundberg

    IPC分类号： C08L83/06 ,  C08G77/14 ,  G03F7/004

    CPC分类号： C08G77/04 ,  C08G77/045 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/2041

    摘要： A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

    摘要翻译： 一种组合物，其包含式T m 3的功能化多面体低聚倍半硅氧烷衍生物，其中m等于8,10或12和Q n M R1，R2，R3其中n等于8,10或12。 官能团包括碱水溶性部分。 官能化多面体低聚倍半硅氧烷衍生物的混合物非常适合用作光刻和浸没光刻应用中的光致抗蚀剂的顶涂层。