公开(公告)号：US06325696B1

公开(公告)日：2001-12-04

申请号：US09395393

申请日：1999-09-13

申请人： Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael F. Lofaro ,  Adam D. Ticknor ,  Ronald D. Fiege

发明人： Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael F. Lofaro ,  Adam D. Ticknor ,  Ronald D. Fiege

IPC分类号： B24B4900

CPC分类号： B24B37/30 ,  B24B37/32 ,  B24B49/12 ,  B24B49/16

摘要： A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.

摘要翻译： 化学机械抛光（CMP）控制系统控制正在抛光的半导体晶片背面的压力分布。 该系统包括具有用于支撑半导体晶片的载体的CMP装置。 载体包括多个双功能压电致动器。 致动器感测半导体晶片上的压力变化，并且可以单独控制。 控制器连接到致动器，用于监测感测的压力变化并控制致动器以提供横跨半导体晶片的受控压力分布。

公开(公告)号：US6030275A

公开(公告)日：2000-02-29

申请号：US40088

申请日：1998-03-17

申请人： Michael F. Lofaro

发明人： Michael F. Lofaro

IPC分类号： B24B37/30 ,  B24B49/10 ,  B24B5/01

CPC分类号： B24B37/30 ,  B24B49/10

摘要： A semiconductor wafer carrier for holding a wafer is provided, where the wafer has edge portions and central portions. The carrier has a fixed permanent magnet having portions defining a cavity and a first coil slidably disposed within the cavity of the fixed permanent magnet. Also provided is a speaker cone having a conical portion and a diaphragm portion. The conical portion has a first end of a first diameter and a second end of a second diameter larger than the first diameter. The first end is fixed to the first coil. The diaphragm covers the second end and has edge portions constrained from movement and central portions free to deflect. A backing film is sealingly affixed to the diaphragm for isolating the speaker from the outside environment. Lastly, a wafer retaining means is provided for retaining the wafer against the backing film along its edge portions. With the application of a voltage to the first coil, the first coil is made to translate within the cavity of the permanent magnet which in turn results in the diaphragm, backing film, and wafer affixed thereto to deflect a predetermined distance at their central portions.

摘要翻译： 提供了用于保持晶片的半导体晶片载体，其中晶片具有边缘部分和中心部分。 载体具有固定永磁体，其具有限定空腔的部分和可滑动地设置在固定永磁体的空腔内的第一线圈。 还提供了具有锥形部分和隔膜部分的扬声器锥体。 锥形部分具有第一直径的第一端和比第一直径大的第二直径的第二端。 第一端固定在第一线圈上。 隔膜覆盖第二端并且具有限制运动的边缘部分和中心部分自由偏转。 背衬膜密封地固定在隔膜上，用于将扬声器与外部环境隔离。 最后，提供晶片保持装置用于将晶片沿其边缘部分保持抵靠背衬膜。 通过向第一线圈施加电压，使第一线圈在永磁体的空腔内平移，这又导致固定到其上的隔膜，背衬膜和晶片在其中心部分偏转预定距离。

公开(公告)号：US6012968A

公开(公告)日：2000-01-11

申请号：US127344

申请日：1998-07-31

申请人： Michael F. Lofaro

发明人： Michael F. Lofaro

IPC分类号： B24B53/007 ,  B24B53/017 ,  B24C1/00 ,  B24C3/22 ,  B24B53/00

CPC分类号： B24B53/017 ,  B24C1/003 ,  B24C3/22

摘要： A method and apparatus for conditioning a polishing pad. In this method and apparatus a glazed polishing pad is conditioned by being contacted with a stream of cryogenic pellets.

摘要翻译： 一种用于调理抛光垫的方法和装置。 在这种方法和装置中，通过与低温颗粒物流接触来调节玻璃抛光垫。

公开(公告)号：US5558563A

公开(公告)日：1996-09-24

申请号：US392591

申请日：1995-02-23

申请人： William J. Cote ,  Michael F. Lofaro

发明人： William J. Cote ,  Michael F. Lofaro

IPC分类号： B24B37/04 ,  B24D13/14 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/26 ,  B24B37/042

摘要： A method and apparatus for improved control of polishing in chemical-mechanical polishing operations is provided. The polishing is controlled by applying different amounts of pressure to the surface of a substrate during polishing. A polishing pad which includes raised portions is used to apply the varying amounts of pressure. In addition, the position, size and height of the raised portions is used to affect the amount of pressure applied.

摘要翻译： 提供了一种用于改善化学机械抛光操作中抛光控制的方法和装置。 抛光是通过在抛光期间将不同量的压力施加到基底表面来控制的。 使用包括凸起部分的抛光垫来施加变化的压力。 此外，凸起部分的位置，尺寸和高度用于影响施加的压力量。

公开(公告)号：US5558111A

公开(公告)日：1996-09-24

申请号：US382724

申请日：1995-02-02

申请人： Michael F. Lofaro

发明人： Michael F. Lofaro

IPC分类号： B08B3/02 ,  B24B37/34

CPC分类号： B24B37/34 ,  B08B3/02 ,  Y10S134/902

摘要： An apparatus and method for cleaning and reconditioning a wafer carrier backing film. The apparatus comprises a flat perforated surface plate with a perforated film or perforated embossed glass plate on its surface; a backing plate connected to the surface plate which is fitted for connection to a cleaning solution supply and a vacuum source; and a contacting mechanism for extension/retraction of the surface plate until it contacts the carrier backing film. Following a wafer unload cycle, the carrier backing film is reconditioned by spraying a cleaning solution at the carrier backing film so as to rinse slurry deposits from the film material; extending the surface plate to make sealed contact with the wafer carrier; initiating a vacuum condition to press the carrier backing film and draw out slurry residuals and excessive water content from within the film; and retracting the surface plate to reconstitute the film as the material draws in surrounding air to break the vacuum condition.

摘要翻译： 一种用于清洁和修复晶片载体背衬膜的设备和方法。 该装置包括在其表面上具有穿孔膜或穿孔压花玻璃板的扁平穿孔表面板; 连接到表面板的背板，其被安装用于连接到清洁溶液供应源和真空源; 以及用于表面板的延伸/缩回的接触机构，直到其接触载体背衬膜。 在晶片卸载循环之后，通过在载体背衬膜上喷射清洁溶液来重新调整载体背衬膜，以便从膜材料中冲洗浆料沉积物; 延伸表面板以与晶片载体密封接触; 启动真空条件以压制载体背衬膜并从膜内抽出浆液残留物和过多的含水量; 并且当材料吸入周围的空气中以折回真空条件时，缩回表面板以重构膜。

公开(公告)号：US08535118B2

公开(公告)日：2013-09-17

申请号：US13237374

申请日：2011-09-20

申请人： Michael A. Cobb ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Dennis G. Manzer

发明人： Michael A. Cobb ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Dennis G. Manzer

IPC分类号： B24B1/00

CPC分类号： B24B37/30 ,  B24B27/0069 ,  B24B27/0076 ,  B24B37/105 ,  B24B37/245 ,  B24B37/345 ,  B24B41/047

摘要： An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.

摘要翻译： 用于化学机械平面化的装置包括主轴组件结构和至少一个基板载体，其在主轴组件结构中的多个圆柱形主轴的磨削表面接触并相对于彼此相对地相互线性地横向移动，并且至少旋转 一个衬底安装在所述至少一个衬底载体上。 线性横向移动的方向在切向接触多个圆柱形主轴的平面内，并且可以与多个圆柱形主轴的旋转轴线正交。

公开(公告)号：US08507383B2

公开(公告)日：2013-08-13

申请号：US13012879

申请日：2011-01-25

申请人： Takashi Ando ,  Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

发明人： Takashi Ando ,  Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

IPC分类号： H01L21/302 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

摘要： Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.

摘要翻译： 用于抛光多个电介质层以形成替换金属栅极结构的方法包括第一化学机械抛光步骤，以去除覆盖层并平坦化顶层以在栅极结构上留下平坦化的厚度。 第二化学机械抛光步骤包括去除厚度以暴露栅极结构的电介质的下面覆盖的表面，其中浆料被配置成基本上等同地抛光顶层和下面的被覆表面以实现平面形貌。 采用第三种化学机械抛光步骤来去除栅极结构的电介质并露出栅极导体。

公开(公告)号：US08497210B2

公开(公告)日：2013-07-30

申请号：US13012142

申请日：2011-01-24

申请人： Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

发明人： Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

摘要： A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.

摘要翻译： 抛光方法包括在第一抛光剂中抛光晶片以去除覆盖层并平坦化顶层，留下保留在下层上的部分。 第二抛光步骤包括两个阶段。 在第一阶段中，去除顶层并暴露下层，其顶层至基层选择性为约1:1至约2:1，以提供平面形貌。 在第二阶段中，顶层的残余部分从下层的顶部去除，以确保下层的表面完全曝光。

公开(公告)号：US08445313B2

公开(公告)日：2013-05-21

申请号：US13546684

申请日：2012-07-11

申请人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Shih-Hung Chen ,  Eric A. Joseph ,  Chung Hon Lam ,  Michael F. Lofaro ,  Hsiang-Lan Lung ,  Alejandro G. Schrott ,  Min Yang

发明人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Shih-Hung Chen ,  Eric A. Joseph ,  Chung Hon Lam ,  Michael F. Lofaro ,  Hsiang-Lan Lung ,  Alejandro G. Schrott ,  Min Yang

IPC分类号： H01L21/00

CPC分类号： H01L45/06 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1683

摘要： A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

摘要翻译： 一种形成与相变材料对准的位线的方法，包括在下电极的一部分上形成牺牲材料的基座并且形成与所述牺牲材料相邻的至少一个电介质材料，其中所述至少一种电介质材料具有 上表面与牺牲材料的基座的上表面基本共面。 牺牲材料的基座被选择性地移除到至少一个电介质材料和下电极以提供到下电极的暴露表面的开口。 在下电极的暴露表面上形成相变材料，并且用导电填充材料填充开口。 还提供了自对准的回蚀工艺。

公开(公告)号：US20120202333A1

公开(公告)日：2012-08-09

申请号：US13020051

申请日：2011-02-03

申请人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Shih-Hung Chen ,  Eric A. Joseph ,  Chung Hon Lam ,  Michael F. Lofaro ,  Hsiang-Lan Lung ,  Alejandro G. Schrott ,  Min Yang

发明人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Shih-Hung Chen ,  Eric A. Joseph ,  Chung Hon Lam ,  Michael F. Lofaro ,  Hsiang-Lan Lung ,  Alejandro G. Schrott ,  Min Yang

IPC分类号： H01L21/02

CPC分类号： H01L45/06 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1683

摘要： A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and fowling at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

摘要翻译： 一种形成与相变材料对准的位线的方法，其包括在下电极的一部分上形成牺牲材料的基座并且与邻近所述牺牲材料的至少一个电介质材料相连，其中所述至少一种电介质材料具有 上表面与牺牲材料的基座的上表面基本共面。 牺牲材料的基座被选择性地移除到至少一个电介质材料和下电极以提供到下电极的暴露表面的开口。 在下电极的暴露表面上形成相变材料，并且用导电填充材料填充开口。 还提供了自对准的回蚀工艺。