公开(公告)号：US06734102B2

公开(公告)日：2004-05-11

申请号：US10252195

申请日：2002-09-23

Applicant: Sudha Rathi ,  Ping Xu ,  Judy Huang

Inventor： Sudha Rathi ,  Ping Xu ,  Judy Huang

IPC: H01L23205

CPC classification number: H01L21/32136 ,  B08B7/0035 ,  C23C16/0245 ,  C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/76807 ,  H01L21/76883 ,  Y10S438/907

Abstract: The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

公开(公告)号：US06724592B1

公开(公告)日：2004-04-20

申请号：US10248018

申请日：2002-12-11

Applicant: Paul C. F. Tong ,  Ming-Dou Ker ,  Ping Ping Xu ,  Kwong Shing Lin ,  Anna Tam

Inventor： Paul C. F. Tong ,  Ming-Dou Ker ,  Ping Ping Xu ,  Kwong Shing Lin ,  Anna Tam

IPC: H02H900

CPC classification number: H01L27/0266

Abstract: Pin-to-pin electro-static-discharge (ESD) protection is provided for a bus-switch transistor that is connected to I/O pins at its source and drain. A p-type substrate is normally pumped below ground by a substrate bias generator when power is applied. However, during a pin-to-pin ESD test, power and ground are floating. A gate node is pulled high through a coupling capacitor by the ESD pulse. The gate node turns on a shunting transistor to couple the ESD pulse to the floating ground bus. The gate node also turns on a shorting transistor that connects the floating ground bus to the floating substrate. A resistor drains the coupling capacitor to the substrate, rather than to ground. Current is injected into the substrate by the resistor. The snapback voltage is lowered by substrate-triggering.

Abstract translation: 针对与源极和漏极上的I / O引脚连接的总线开关晶体管提供引脚对引脚静电放电（ESD）保护。 当施加电力时，p型衬底通常由衬底偏压发生器在地下被泵送。 然而，在引脚到引脚ESD测试期间，电源和接地是浮动的。 通过ESD脉冲通过耦合电容将栅极节点拉高。 栅极节点接通分流晶体管，将ESD脉冲耦合到浮地接地总线。 栅极节点还接通将浮动接地总线连接到浮置基板的短路晶体管。 电阻器将耦合电容器排入衬底，而不是接地。 通过电阻将电流注入衬底。 通过基板触发降低快速恢复电压。

公开(公告)号：US06699784B2

公开(公告)日：2004-03-02

申请号：US10096503

申请日：2002-03-12

Applicant: Li-Qun Xia ,  Ping Xu ,  Louis Yang ,  Tzu-Fang Huang ,  Wen H. Zhu

Inventor： Li-Qun Xia ,  Ping Xu ,  Louis Yang ,  Tzu-Fang Huang ,  Wen H. Zhu

IPC: H01L2131

CPC classification number: H01L21/31144 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31138 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

Abstract translation: 提供了一种在低k电介质层上沉积碳氧化硅硬掩模的方法。 还公开了在低k电介质层上含有碳氧化硅硬掩模的衬底。 硅碳化硅硬掩模可以由包含硅氧烷的处理气体形成。

公开(公告)号：US6094074A

公开(公告)日：2000-07-25

申请号：US116645

申请日：1998-07-16

Applicant: Kuang-Kai Chi ,  Ping Xu

Inventor： Kuang-Kai Chi ,  Ping Xu

IPC: H03K19/086 ,  H03K19/094 ,  H03K19/0944 ,  H03K19/21

CPC classification number: H03K19/215 ,  H03K19/09432

Abstract: A common mode logic (CML) circuit having an improved bias circuit and an active MOS load operating exclusively in the triode region to provide improved performance characteristics including a high speed of operation. The bias circuit of the CML circuit comprises a pair of MOS transistors, one of which has an aspect ratio (W.sub.P /L.sub.P) and the other of which has an aspect ratio (W.sub.P /L.sub.P)/n, wherein 1

Abstract translation: 一种共模逻辑（CML）电路，其具有改进的偏置电路和仅在三极管区域中工作的有源MOS负载，以提供包括高速操作的改进的性能特性。 CML电路的偏置电路包括一对MOS晶体管，其中一个具有纵横比（WP / LP），另一个具有纵横比（WP / LP）/ n，其中1

公开(公告)号：US11162195B2

公开(公告)日：2021-11-02

申请号：US16407053

申请日：2019-05-08

Applicant: Rui Ping Xu

Inventor： Rui Ping Xu

IPC: D02G3/12 ,  D02G3/38 ,  D02G3/44 ,  A41D19/015

Abstract: In one aspect, a method of manufacturing a protective textile may include steps of (a) twisting a first yarn with a tungsten filament; and (b) using a second yarn to cover the yarn-tungsten product generated in step (a). The yarn generated in step (b) is further twisted with an elastic spandex. In one embodiment, the first yarn is selected from a group of Nylon, Polyethylene Terephthalate (PET), cotton yarn, bamboo fiber and Tencel. In another embodiment, a Polyethylene (PE) fiber is the second yarn, and the third yarn may include Nylon, PET or PE. The protective textile is advantageous because it is light, thin, soft and highly cut resistant. Also, it has great electrical conductivity and chemical stability, and it is not easy to deform after washing.

公开(公告)号：US09322049B2

公开(公告)日：2016-04-26

申请号：US13516198

申请日：2010-12-14

Applicant: Anthony Sauve ,  Ping Xu

Inventor： Anthony Sauve ,  Ping Xu

IPC: A61K31/70 ,  A61K31/185 ,  C12Q1/48

CPC classification number: C12Q1/48 ,  G01N2333/91142 ,  G01N2500/04

Abstract: The invention provides a method of increasing a deacetylated activity of SIRT6 by contacting SIRT6 with an agent that binds SIRT6 and reduces the Km of SIRT6 for a substrate, thereby increasing the deacetylase activity of SIRT6. The invention also provides compounds of the formulas (II) and (III).

Abstract translation: 本发明提供了通过使SIRT6与结合SIRT6的试剂接触并降低底物的SIRT6的Km，从而增加SIRT6的脱乙酰酶活性而提高SIRT6脱乙酰化活性的方法。 本发明还提供式（II）和（III）的化合物。

公开(公告)号：US08658707B2

公开(公告)日：2014-02-25

申请号：US12886817

申请日：2010-09-21

Applicant: Ping Xu ,  Jack J. Hegenbarth ,  Rachel Radspinner ,  Paul D. Drumheller ,  William B. Johnson ,  Wen K. Liu ,  Xin Kang Chen

Inventor： Ping Xu ,  Jack J. Hegenbarth ,  Rachel Radspinner ,  Paul D. Drumheller ,  William B. Johnson ,  Wen K. Liu ,  Xin Kang Chen

IPC: C08J9/16 ,  C08F214/26 ,  C08F228/02 ,  C08F220/50 ,  C08F220/28

CPC classification number: A61L31/041 ,  A61L31/048 ,  A61L31/16 ,  B01D67/0093 ,  B01D71/32 ,  B01J39/18 ,  B29C55/005 ,  B29K2027/18 ,  B29K2105/04 ,  B29K2995/0092 ,  C08F14/26 ,  C08F214/26 ,  C08F214/262 ,  C08F214/265 ,  C08F220/28 ,  C08F220/50 ,  C08F228/02 ,  C08J5/2237 ,  C08J9/28 ,  C08J9/35 ,  C08J2201/0502 ,  C08J2327/18 ,  C08L27/18 ,  C08L2205/02 ,  Y10T428/31544 ,  C08L2666/04 ,  C08F2/22

Abstract: A functional TFE copolymer fine powder is described, wherein the TFE copolymer is a polymer of TFE and at least one functional comonomer, and wherein the TFE copolymer has functional groups that are pendant to the polymer chain. The functional TFE copolymer fine powder resin is paste extrudable and expandable. Methods for making the functional TFE copolymer are also described. The expanded functional TFE copolymer material may be post-reacted after expansion.

Abstract translation: 描述了一种功能性TFE共聚物细粉末，其中TFE共聚物是TFE和至少一种官能共聚单体的聚合物，并且其中TFE共聚物具有垂直于聚合物链的官能团。 功能性TFE共聚物细粉末树脂是可挤出和可膨胀的糊状物。 还描述了制备功能性TFE共聚物的方法。 膨胀的功能性TFE共聚物材料可以在膨胀后进行后反应。

公开(公告)号：US08623963B2

公开(公告)日：2014-01-07

申请号：US12353514

申请日：2009-01-14

Applicant: Ping Xu ,  Jack Hegenbarth

Inventor： Ping Xu ,  Jack Hegenbarth

IPC: C08F8/00 ,  C08J3/05

CPC classification number: C08L29/10 ,  C08K3/36 ,  C08L27/12 ,  C08L27/18 ,  C08L33/22 ,  C08L2205/02 ,  C08L2666/04

Abstract: High purity perfluoroelastomer composites and processes for producing the same are provided. High purity composites may be formed from compositions comprising a crosslinkable fluoroelastomer terpolymer of TFE, PAVE, and CNVE, and functionalized PTFE, which may be crosslinked to form crosslinked composites having low metal content and low compression set. Emulsion mixtures for forming the high purity composites are also provided.

Abstract translation: 提供了高纯度全氟弹性体复合材料及其制备方法。 高纯度复合材料可以由包含TFE，PAVE和CNVE的交联性含氟弹性体三元共聚物和官能化PTFE的组合物形成，其可以交联以形成具有低金属含量和低压缩永久变形的交联复合材料。 还提供了用于形成高纯度复合材料的乳液混合物。

公开(公告)号：US20130143286A1

公开(公告)日：2013-06-06

申请号：US13698708

申请日：2010-11-22

Applicant: Ping XU ,  Limin Wang ,  Bo Zhao ,  Cuiqing Ma ,  Fei Su ,  Fei Tao ,  Hongzhi Tang

Inventor： Ping XU ,  Limin Wang ,  Bo Zhao ,  Cuiqing Ma ,  Fei Su ,  Fei Tao ,  Hongzhi Tang

IPC: C12N15/75

CPC classification number: C12N15/75 ,  C12P7/56 ,  C12P2203/00 ,  C12R1/07

Abstract: The invention is concerned with the strains of B. coagulans for lactic acid production and the related methods, in which the carbon sources are pentose or hexose or the agricultural or industrial wastes containing pentose or hexose or a mixture of both. According to the invention, the highest amount of L-lactic acid produced from glucose is 173 g/L, the optical purity is over 99%, the yield is up to 0.98, and the productivity is up to 2.4 g/L per hour. The highest amount of L-lactic acid produced from xylose is 195 g/L, the optical purity is over 99%, the yield is up to 0.98, and the productivity is up to 2.7 g/L per hour. The highest amount of L-lactic acid produced from reducing sugars in xylitol byproducts is 106 g/L, the optical purity is over 99%, and the productivity is up to 2.08 g/L per hour. The B. coagulans strains XZL4 (DSM No. 23183) and XZL9 (DSM No. 23184) of the invention can directly utilize various reducing sugars in xylitol byproducts to produce high amounts of L-lactic acid, which improves the production efficiency at low costs, and the strains are, thus, appropriate for industrial productions.

Abstract translation: 本发明涉及用于乳酸生产的凝固芽孢杆菌菌株及其相关方法，其中碳源为戊糖或己糖，或者含有戊糖或己糖的农业或工业废物或两者的混合物。 根据本发明，葡萄糖产生的L-乳酸量最高为173g / L，光学纯度超过99％，产率高达0.98，生产率高达2.4g / L。 由木糖产生的L-乳酸含量最高为195g / L，光学纯度超过99％，产率高达0.98，生产率高达2.7g / L。 由木糖醇副产物中的还原糖产生的最大量的L-乳酸为106g / L，光学纯度为99％以上，生产率高达每小时2.08g / L。 本发明的凝结芽孢杆菌菌株XZL4（DSM No.23183）和XZL9（DSM No.23184）可以直接利用木糖醇副产物中的各种还原糖来生产大量的L-乳酸，以低成本提高生产效率 ，因此适用于工业生产。

公开(公告)号：USD662469S1

公开(公告)日：2012-06-26

申请号：US29404385

申请日：2011-10-20

Applicant: Mitch Mulder ,  Ping Xu

Designer： Mitch Mulder ,  Ping Xu