公开(公告)号：US20250149516A1

公开(公告)日：2025-05-08

申请号：US18780730

申请日：2024-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Kang ,  Daegon Kim

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/49 ,  H01L23/498 ,  H01L23/538 ,  H01L27/144 ,  H10B80/00

Abstract: A semiconductor package including a package substrate, a plurality of photonics bridge chips located on the package substrate, a molding layer located on the package substrate, surrounding the plurality of photonics bridge chips, and including a plurality of via electrodes, and a plurality of chiplets located on the molding layer and the plurality of photonics bridge chips, the chiplets each including a photonics chip and a semiconductor chip located on the photonics chip, wherein the plurality of chiplets are spaced apart from each other in a horizontal direction, and at least two chiplets adjacent to each other from among the plurality of chiplets overlap one photonics bridge chip from among the plurality of photonics bridge chips in a vertical direction.

公开(公告)号：US20250149494A1

公开(公告)日：2025-05-08

申请号：US18940264

申请日：2024-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekyung Yoo ,  Jinwoo Park ,  Kyonghwan Koh ,  Woohyeong Kim ,  Taeryong Kim

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/29 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H10B80/00

Abstract: A semiconductor package includes a first substrate, a first semiconductor chip on an upper surface of the first substrate, a first bump between the first substrate and the first semiconductor chip, a first underfill layer that fills a center portion of a space between the first substrate and the first semiconductor chip, and a first molding member that covers an upper surface and side surfaces of the first semiconductor chip, and fills a periphery portion of the space between the first substrate and the first semiconductor chip, wherein a volume occupied by the first molding member in the space between the first substrate and the first semiconductor chip is greater than a volume occupied by the first underfill layer in the space between the first substrate and the first semiconductor chip.

公开(公告)号：US20250149443A1

公开(公告)日：2025-05-08

申请号：US18533031

申请日：2023-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUJIN PARK ,  HONGSOO KIM ,  HEE-SUNG KAM ,  BYUNGJOO GO ,  Janghee JUNG

IPC: H01L23/528 ,  H01L23/522 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device may include a source structure including a cell region and an extension region adjacent to the cell region, a gate stack in the cell and extension regions, a penetration contact disposed in the extension region, a stepwise insulating layer disposed on the gate, and an interconnection structure on the stepwise insulating layer. The interconnection structure may include a first interconnection insulating layer, a first lower conductive pattern in the first interconnection insulating layer, a capping layer on the first interconnection insulating layer, and a via structure penetrating the capping layer. The via structure may include a plurality of first vias connected to the first lower conductive pattern and connected to an upper conductive pattern, and the first vias may be disposed in the extension region.

公开(公告)号：US20250149340A1

公开(公告)日：2025-05-08

申请号：US18678183

申请日：2024-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungchan Yun ,  Kang-Ill Seo

IPC: H01L21/28 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: Transistor devices are provided. A transistor device includes a substrate and a transistor stack on the substrate. The transistor stack includes a lower transistor and an upper transistor that is on top of the lower transistor. Moreover, the transistor device includes a gate-cut on the substrate, adjacent the transistor stack. The gate-cut has a first sloped sidewall and a second sloped sidewall that is opposite the first sloped sidewall. Related methods of forming transistor devices are also provided.

公开(公告)号：US20250149311A1

公开(公告)日：2025-05-08

申请号：US18762910

申请日：2024-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho IM ,  Younseon WANG ,  Keonwoo KIM ,  Youngjin NOH ,  Dougyong SUNG ,  Wonhee LEE ,  Sungwook JUNG

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/683

Abstract: A substrate processing apparatus may include a chucking member configured to support a substrate, a base plate configured to support the chucking member, a bonding layer located between the chucking member and the base plate, the bonding layer configured to adhere the chucking member to the base plate, a coating layer on an outer side surface of the bonding layer, and a bonding protective member surrounding an outer side surface of the coating layer, wherein the coating layer conformally covers the outer side surface of the bonding layer.

公开(公告)号：US20250149301A1

公开(公告)日：2025-05-08

申请号：US19009570

申请日：2025-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Hoon PARK ,  Jung Hwan UM ,  Jin Young PARK ,  Ho Yong PARK ,  Jin Young BANG ,  Jong Woo SUN ,  Sang Jean JEON ,  Je Woo HAN

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

公开(公告)号：US20250149080A1

公开(公告)日：2025-05-08

申请号：US18784796

申请日：2024-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhee Cho ,  Incheol Nam ,  Kyuchang Kang ,  Sangyun Kim ,  Sunyoung Kim ,  Jongwook Park ,  Hoseok Lee ,  Kangsub Jeong

IPC: G11C11/4091 ,  G11C11/4094

Abstract: A memory device includes a memory cell array, a sense amplifier, a voltage generation circuit and a control circuit. The memory cell array includes a plurality of bit lines to which a plurality of memory cells are connected, and a shielding bit line arranged between the plurality of bit lines and on lower portions of the plurality of bit lines. The sense amplifier is configured to sense and amplify data stored in a memory cell selected from among the plurality of memory cells. The voltage generation circuit is configured to generate a bit line precharge voltage and an internal power voltage based on a power voltage of the memory device. The control circuit is configured to selectively provide the shielding bit line with the bit line precharge voltage or the internal power voltage.

公开(公告)号：US20250149044A1

公开(公告)日：2025-05-08

申请号：US19013349

申请日：2025-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonguk YOO ,  Dokyun LEE ,  Jaeyoung ROH ,  Youngmoon JUNG ,  Changwoo HAN ,  Jungwook HWANG

IPC: G10L17/06

Abstract: An electronic device is provided. The electronic device includes: a voice reception unit comprising circuitry, memory storing an artificial intelligence model configured to acquire a voice signal of a user from an audio signal and information on characteristics of a plurality of users, and at least one processor, comprising processing circuitry, individually and/or collectively, configured to: based on an audio signal being received through the voice reception unit, obtain a first audio signal by inputting information on a characteristic of a first user set as a target speaker among the plurality of users and the received audio signal to the artificial intelligence model, based on voice recognition based on the first audio signal failing, identify a similarity between information on a characteristic of a second audio signal excluding the first audio signal among the received audio signals and information on characteristics of remaining users excluding the first user among the plurality of users, and change the target speaker to a second user among the plurality of users.

公开(公告)号：US20250148940A1

公开(公告)日：2025-05-08

申请号：US19002254

申请日：2024-12-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghoon LEE ,  Kyungpil KIM ,  Dooryong KIM ,  Sanghyun KIM ,  Jongyoon KIM ,  Kwonho SON ,  Ohhee LEE ,  Jongchul CHOI

IPC: G09F3/00 ,  H04M1/02

Abstract: An electronic device includes: a housing including a through hole connecting an outside of the electronic device and an inside of the electronic device; a printed circuit board within the housing; an interface bracket including a first portion within the through hole and a second portion facing a first surface of the printed circuit board; a sealing member around the first portion of the interface bracket and contacting an inner surface of the through hole; and an indicator label on the first surface of the printed circuit board and a lateral surface of the printed circuit board facing the through hole, where the indicator label is changeable by moisture introduced from the outside of the electronic device through the through hole.

公开(公告)号：US20250148898A1

公开(公告)日：2025-05-08

申请号：US19020354

申请日：2025-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rahul AGRAWAL ,  Kaushik DAS ,  Sreedeep MOULIK ,  Muthukumaran NATARAJAN ,  Aneri UDESHI

IPC: G08B21/18 ,  G08B21/22

Abstract: A method includes detecting one or more entities in an interior space; obtaining information associated with at least one outside activity performed by the one or more entities; monitoring at least one subsequent activity of the one or more entities that is performed in the interior space; and identifying at least one location with a likelihood of being hazardous by correlating the at least one subsequent activity with the obtained information.