公开(公告)号：US07838430B2

公开(公告)日：2010-11-23

申请号：US10823364

申请日：2004-04-12

Applicant: Steven C. Shannon ,  Dennis S. Grimard ,  Theodoros Panagopoulos ,  Daniel J. Hoffman ,  Michael G. Chafin ,  Troy S. Detrick ,  Alexander Paterson ,  Jingbao Liu ,  Taeho Shin ,  Bryan Y. Pu

Inventor： Steven C. Shannon ,  Dennis S. Grimard ,  Theodoros Panagopoulos ,  Daniel J. Hoffman ,  Michael G. Chafin ,  Troy S. Detrick ,  Alexander Paterson ,  Jingbao Liu ,  Taeho Shin ,  Bryan Y. Pu

IPC: H01L21/302

CPC classification number: H01J37/32082 ,  H01J37/32165

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract translation: 提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。 该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性 形成在处理室中。

公开(公告)号：US07813103B2

公开(公告)日：2010-10-12

申请号：US11974502

申请日：2007-10-11

Applicant: Steven C. Shannon ,  Michael G. Chafin ,  Dennis S. Grimard

Inventor： Steven C. Shannon ,  Michael G. Chafin ,  Dennis S. Grimard

IPC: H02N13/00 ,  H01T23/00

CPC classification number: H02N13/00 ,  H01J37/32091 ,  H01J37/32174 ,  H01L21/6833 ,  H01L21/68742

Abstract: An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.

Abstract translation: 反应器室中的静电卡盘具有与地绝缘的阴极电极，与阴极绝缘的夹持电极和覆盖夹持电极的提供工件支撑表面的电介质层。 夹紧电压供应装置连接到夹持电极。 RF发生器耦合到阴极电极。 电压感测装置耦合到夹持电极和阴极电极，以在处理结束时去除RF和DC电力之后，在放电期间监测它们之间的电压差。 电抗器包括一个控制器，其被编程为一旦电压感测装置同时在夹紧和阴极电极上检测相同的电压，就可以在电极放电期间升高升降管脚。

公开(公告)号：US07780866B2

公开(公告)日：2010-08-24

申请号：US11751592

申请日：2007-05-21

Applicant: Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

Inventor： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01J37/3266 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32697

Abstract: A method for processing a workpiece in a plasma reactor. The method comprises constraining plasma in the chamber away from the floor of the pumping annulus, providing an annular baffle while compensating for asymmetry of gas flow attributable to the pumping port, and providing a gas flow equalizer below the baffle having an eccentrically shaped opening. The method further includes modifying the radial distribution of plasma ion density and providing a magnetic plasma steering field having an edge high plasma ion density distribution tendency. The method further comprises locating the baffle at a sufficient distance below the workpiece to provide an edge low plasma ion density distribution tendency that compensates the edge high plasma ion density distribution tendency of the magnetic plasma steering field.

Abstract translation: 一种在等离子体反应器中处理工件的方法。 该方法包括将腔室中的等离子体约束在泵送环空的地板之外，提供环形挡板，同时补偿归因于泵送端口的气流的不对称性，以及在挡板下方提供具有偏心形状的开口的气流均衡器。 该方法还包括修改等离子体离子密度的径向分布并提供具有边缘高等离子体离子密度分布倾向的磁等离子体转向场。 该方法还包括将挡板定位在工件下方足够的距离处，以提供补偿磁等离子体转向场的边缘高等离子体离子密度分布趋势的边缘低等离子体离子密度分布趋势。

公开(公告)号：US07777599B2

公开(公告)日：2010-08-17

申请号：US11934197

申请日：2007-11-02

Applicant: Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

Inventor： Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

IPC: H01P7/06 ,  H05B31/26

CPC classification number: H05H1/0081 ,  H01J37/32091 ,  H01J37/32174

Abstract: Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.

Abstract translation: 本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。 在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。

公开(公告)号：US20090294414A1

公开(公告)日：2009-12-03

申请号：US12129091

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Mathew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Mathew L. Miller ,  Kenneth S. Collins

IPC: B23K10/00

CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32935

Abstract: A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.

Abstract translation: 一种在等离子体反应室中处理工件的方法，其中根据对应于期望的过程瞬态循环的时变调制控制信号调制多个施加的RF等离子体功率中的第一个。 该方法通过响应于时变调制控制信号调制多个等离子体功率中的第二个来实现反射功率的降低。

公开(公告)号：US07554334B2

公开(公告)日：2009-06-30

申请号：US11536197

申请日：2006-09-28

Applicant: Steven C. Shannon ,  Daniel J. Hoffman ,  Steven Lane ,  Walter R. Merry ,  Jivko Dinev

Inventor： Steven C. Shannon ,  Daniel J. Hoffman ,  Steven Lane ,  Walter R. Merry ,  Jivko Dinev

IPC: G01R31/02

CPC classification number: H03H7/38 ,  H03H11/28

Abstract: Embodiments of a method of calculating the equivalent series resistance of a matching network using variable impedance analysis and matching networks analyzed using the same are provided herein. In one embodiment, a method of calculating the equivalent series resistance of a matching network includes the steps of connecting the matching network to a load; measuring an output of the matching network over a range of load impedances; and calculating the equivalent series resistance of the matching network based upon a relationship between the measured output and the load resistance. The load may be a surrogate load or may be a plasma formed in a process chamber.

Abstract translation: 本文提供了使用可变阻抗分析和使用其分析的匹配网络来计算匹配网络的等效串联电阻的方法的实施例。 在一个实施例中，计算匹配网络的等效串联电阻的方法包括将匹配网络连接到负载的步骤; 在一定范围的负载阻抗上测量匹配网络的输出; 并根据测量输出与负载电阻之间的关系计算匹配网络的等效串联电阻。 负载可以是替代负载，也可以是在处理室中形成的等离子体。

公开(公告)号：US07510665B2

公开(公告)日：2009-03-31

申请号：US11416468

申请日：2006-05-02

Applicant: Steven C. Shannon ,  Alexander Paterson ,  Theodoros Panagopoulos ,  John P. Holland ,  Dennis S. Grimard ,  Daniel J. Hoffman

Inventor： Steven C. Shannon ,  Alexander Paterson ,  Theodoros Panagopoulos ,  John P. Holland ,  Dennis S. Grimard ,  Daniel J. Hoffman

IPC: G01R31/00

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32431

Abstract: A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

Abstract translation: 提供了一种用于控制半导体衬底处理室中的等离子体的方法。 该方法包括以第一频率向处理室内的第一电极提供第一RF信号以在第一频率引起等离子体鞘振荡的步骤; 以及以第二频率从所述源向所述第一电极提供第二RF信号，所述第二频率被选择为在所述第二频率处引起等离子体鞘振荡，其中所述第二频率与所述第一频率不同，所述差异等于所选择的频率以引起等离子体 鞘振荡在所需频率。

公开(公告)号：US20090025879A1

公开(公告)日：2009-01-29

申请号：US11828713

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: H01L21/306

CPC classification number: H01J37/20 ,  H01J37/16 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.

Abstract translation: RF接地回流电流通过提供旁路电流流动路径而被转移离开反应室的非对称特征。 旁路电流流动路径避免了室底部中的泵送口，避免了晶片狭缝阀，并且由接合到晶片基座并从晶片基座延伸的导电环形挡板提供。 可以通过在侧壁中提供一个或多个绝缘环或通过提供电介质侧壁来阻止低于环形挡板水平面的电流。

公开(公告)号：US20080314522A1

公开(公告)日：2008-12-25

申请号：US12201156

申请日：2008-08-29

Applicant: Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, JR.

Inventor： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, JR.

IPC: C23F1/08

CPC classification number: H01J37/321 ,  H01J37/32633 ,  H01J37/3266

Abstract: An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

公开(公告)号：US20080180028A1

公开(公告)日：2008-07-31

申请号：US11733770

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01J7/00

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

Abstract translation: 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。