公开(公告)号：US08767450B2

公开(公告)日：2014-07-01

申请号：US12662949

申请日：2010-05-13

Applicant: Doo-gon Kim ,  Hui-kwon Seo ,  Cheol-kyu Kim ,  Sei-jin Kim ,  Yoon-ho Khang ,  Han-gu Sohn ,  Tae-yon Lee ,  Dae-won Ha

Inventor： Doo-gon Kim ,  Hui-kwon Seo ,  Cheol-kyu Kim ,  Sei-jin Kim ,  Yoon-ho Khang ,  Han-gu Sohn ,  Tae-yon Lee ,  Dae-won Ha

IPC: G11C11/00

CPC classification number: G11C16/3431 ,  G11C11/005 ,  G11C13/0004 ,  G11C13/0033 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/0088 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1616

Abstract: A memory system includes a memory cell array having a plurality of memory sectors. Each memory sector includes a plurality of memory cells. The memory system further includes a controller configured to write data to the memory cell array in response to a writing signal. The controller is further configured to refresh a memory sector among the plurality of memory sectors each time a writing signal is provided. When N (N is a positive integer) memory cells are programmed, a programming current is less than or equal to about 0.75 mA*N.

Abstract translation: 存储器系统包括具有多个存储器扇区的存储单元阵列。 每个存储器扇区包括多个存储单元。 存储器系统还包括配置成响应于写入信号将数据写入存储单元阵列的控制器。 控制器还被配置为在每次提供写入信号时刷新多个存储器扇区中的存储器扇区。 当N（N是正整数）存储单元被编程时，编程电流小于或等于大约0.75mA * N。

公开(公告)号：US20120132804A1

公开(公告)日：2012-05-31

申请号：US13222522

申请日：2011-08-31

Applicant: Tae-yon Lee ,  Dong-seok Suh ,  Yoon-dong Park

Inventor： Tae-yon Lee ,  Dong-seok Suh ,  Yoon-dong Park

IPC: H01L31/0248 ,  H01L31/0256 ,  H01L31/09 ,  H01L31/18

CPC classification number: G01J5/20 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/046 ,  G11C13/0004 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14669

Abstract: A thermal image sensor including a chalcogenide material, and a method of fabricating the thermal image sensor are provided. The thermal image sensor includes a first metal layer formed on a substrate; a cavity exiting the first metal layer adapted for absorbing infrared rays; a bolometer resistor formed on the cavity and including a chalcogenide material; and a second metal layer formed on the bolometer resistor. The thermal image sensor includes a first metal layer formed on a substrate; an insulating layer formed on the first metal layer; a bolometer resistor formed on the insulating layer, including a chalcogenide material and having a thickness corresponding to ¼ of an infrared wavelength (λ); the thermal image sensor further includes a second metal layer formed on the bolometer resistor.

Abstract translation: 提供了包括硫族化物材料的热图像传感器和制造热图像传感器的方法。 热图像传感器包括形成在基板上的第一金属层; 离开第一金属层的适于吸收红外线的空腔; 形成在空腔上并包含硫族化物材料的辐射热电阻器; 以及形成在测辐射热计电阻器上的第二金属层。 热图像传感器包括形成在基板上的第一金属层; 形成在所述第一金属层上的绝缘层; 形成在绝缘层上的辐照热电阻器，包括硫属化物材料，其厚度对应于红外波长（λ）的1/4; 热图像传感器还包括形成在测辐射热计电阻器上的第二金属层。

公开(公告)号：US07994492B2

公开(公告)日：2011-08-09

申请号：US12232661

申请日：2008-09-22

Applicant: Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

Abstract: Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05≦x1≦0.30, 0.00≦y≦0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

Abstract translation: 公开了相变材料合金，包括该相变材料合金的相变存储器，以及制造和操作相变存储器件的方法。 相变材料合金可以包括Si和Sb。 该合金可以是进一步包括O的Si-O-Sb合金.Si-O-Sb合金可以是SixOySbz，其中当x /（x + z）可以是x1,0.05＆nlE; x1＆nlE; 0.30,0.00＆ y和nl; 0.50和x + y + z可以为1.Si-O-Sb合金还可以包含除Si，O和Sb以外的元素。

公开(公告)号：US20090283738A1

公开(公告)日：2009-11-19

申请号：US12213234

申请日：2008-06-17

Applicant: Tae-yon Lee ,  Ki-Joon Kim ,  Jun-ho Lee ,  Cheol-Kyu Kim

Inventor： Tae-yon Lee ,  Ki-Joon Kim ,  Jun-ho Lee ,  Cheol-Kyu Kim

IPC: H01L45/00

CPC classification number: H01L45/1233 ,  H01L45/06 ,  H01L45/148

Abstract: Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.

Abstract translation: 提供了使用单元件半金属薄膜的相变存储器。 该装置包括具有相变材料层和连接到存储节点的开关元件的存储节点，其中存储节点包括形成在上电极和下电极之间的单元件半金属薄膜。 因此，与基于Ge-Sb-Te（GST）的材料的情况相比，可以提高相变存储器的写入速度。

公开(公告)号：US20090196089A1

公开(公告)日：2009-08-06

申请号：US12232661

申请日：2008-09-22

Applicant: Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

IPC: G11C11/00 ,  C01B33/113 ,  C01B21/068 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

Abstract: Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05≦x1≦0.30, 0.00≦y≦0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

Abstract translation: 公开了相变材料合金，包括该相变材料合金的相变存储器，以及制造和操作相变存储器件的方法。 相变材料合金可以包括Si和Sb。 该合金可以是还包含O的Si-O-Sb合金.Si-O-Sb合金可以是SixOySbz，其中当x /（x + z）可以是x1时，0.05 <= x1 <= 0.30,0.00 < = y <= 0.50，x + y + z可以为1.Si-O-Sb合金还可以包含除Si，O和Sb以外的元素。

公开(公告)号：US20090179185A1

公开(公告)日：2009-07-16

申请号：US12285449

申请日：2008-10-06

Applicant: Youn-seon Kang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Yoon-ho Khang ,  Cheol-kyu Kim ,  Dong-seok Suh ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Yoon-ho Khang ,  Cheol-kyu Kim ,  Dong-seok Suh ,  Tae-yon Lee

IPC: H01L47/00 ,  C09K5/00

CPC classification number: H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.

Abstract translation: 相变材料层包括锑（Sb）和铟（In）和镓（Ga）中的至少一种。 相变存储器件包括：存储节点，包括相变材料层和连接到存储节点的开关器件。 相变材料层包括Sb和In和Ga中的至少一种。

公开(公告)号：US06753059B2

公开(公告)日：2004-06-22

申请号：US10138232

申请日：2002-05-01

Applicant: Byung-ki Cheong ,  Soon-Gwang Kim ,  Won-Mok Kim ,  Taek-Sung Lee ,  Sung-Jin Park ,  Tae-Yon Lee ,  Ki-Bum Kim

Inventor： Byung-ki Cheong ,  Soon-Gwang Kim ,  Won-Mok Kim ,  Taek-Sung Lee ,  Sung-Jin Park ,  Tae-Yon Lee ,  Ki-Bum Kim

IPC: B32B302

CPC classification number: G11B7/2433 ,  G11B7/2531 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10T428/21

Abstract: Disclosed in this invention is a phase change optical recording material for a rewritable recording medium with a high speed crystallization and excellent erasibility, which comprises a composition having the formula of: (AaBbCc)x(GeaSbbTec)1−x wherein, A is an element selected from the elements belonging to the IVB group in the periodic table; B is an element selected from the elements belonging to the VB group in the periodic table; C is an element selected from the elements belonging to the VIB group in the periodic table; a, b and c are atomic ratios; x is a mole fraction in the range of 0 to 1; and at least one of A, B and C has a higher atomic number and thus a smaller diatomic bond strength than that of the corresponding element in the GeSbTe part.

Abstract translation: 本发明公开了一种用于具有高速结晶和优异的可擦除性的可重写记录介质的相变光学记录材料，其包括具有下式的组合物：其中，A是选自属于IVB基团的元素的元素 周期表; B是从属于周期表中的VB组的元素中选择的元素; C是从属于周期表中的VIB基的元素中选出的元素; a，b和c是原子比; x是0至1范围内的摩尔分数; 并且A，B和C中的至少一个具有比GeSbTe部分中的相应元素更高的原子数，因此具有更小的双原子键强度。

公开(公告)号：US20150172573A1

公开(公告)日：2015-06-18

申请号：US14481460

申请日：2014-09-09

Applicant: Yibing Michelle WANG ,  Tae-Yon LEE

Inventor： Yibing Michelle WANG ,  Tae-Yon LEE

IPC: H04N5/363 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/363

Abstract: Provided are an imaging device implementing pseudo correlated double sampling (CDS), a pixel of the imaging device and a control method of the image device. The imaging device includes: a pixel array including a pixel, the pixel including a reset transistor to control a reset of the pixel, a row select transistor to control a selection of the pixel to be read out, and a photodiode configured to generate a current in response to incident light; a readout circuit configured to read out an output signal of the pixel, based on the detected incident light, via a pixel output line; a feedback loop configured to receive a voltage from the pixel output line and to apply a reset gate voltage to a gate terminal of the reset transistor based on the received voltage; and a controller configured to control an application of a row select signal to the row select transistor to select the pixel to be read out, and to selectively add an offset to the photodiode to prevent the pixel from being reset despite the reset gate voltage applied to the reset transistor.

Abstract translation: 提供了实现伪相关双采样（CDS），成像设备的像素和图像设备的控制方法的成像设备。 该成像装置包括：包括像素的像素阵列，该像素包括用于控制像素的复位的复位晶体管，用于控制要读出的像素的选择的行选择晶体管，以及被配置为产生电流的光电二极管 响应入射光; 读出电路，被配置为经由像素输出线，基于检测到的入射光读出所述像素的输出信号; 反馈回路，被配置为基于所接收的电压从所述像素输出线接收电压并且将复位栅极电压施加到所述复位晶体管的栅极端子; 以及控制器，被配置为控制对行选择晶体管的行选择信号的应用以选择要读出的像素，并且选择性地向光电二极管添加偏移，以防止复位栅极电压施加到像素 复位晶体管。

公开(公告)号：US20140151530A1

公开(公告)日：2014-06-05

申请号：US14074035

申请日：2013-11-07

Applicant: Tae Yon LEE ,  Jung Kyu JUNG ,  Yoon Dong PARK ,  Hyun Seok LEE

Inventor： Tae Yon LEE ,  Jung Kyu JUNG ,  Yoon Dong PARK ,  Hyun Seok LEE

IPC: H04N5/378

CPC classification number: H04N5/378 ,  H01L2924/0002 ,  H04N5/374 ,  H04N5/3745 ,  H01L2924/00

Abstract: A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit. The pixel includes a thermoelectric element having a thermoelectric-junction, and the readout circuit is configured to control the pixel such that the thermoelectric element performs a thermoelectric-cooling operation and a photoelectric conversion operation.

Abstract translation: 操作图像传感器的方法包括：使用具有与像素集成的热电结的热电元件对像素进行热电冷却; 以及使用该热电元件进行光电转换操作。 图像传感器包括像素和读出电路。 像素包括具有热电结的热电元件，并且读出电路被配置为控制像素，使得热电元件执行热电冷却操作和光电转换操作。

公开(公告)号：US20140104469A1

公开(公告)日：2014-04-17

申请号：US14051802

申请日：2013-10-11

Applicant: Tae Chan KIM ,  Min Ho KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Jung Hoon JUNG ,  Young Gu JIN

Inventor： Tae Chan KIM ,  Min Ho KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Jung Hoon JUNG ,  Young Gu JIN

IPC: H04N5/335

CPC classification number: H04N5/335 ,  H04N5/378

Abstract: An image sensor includes a pixel array and a row driver block. The pixel array includes a plurality of subpixel groups, each including a plurality of subpixels. Each of the plurality of subpixels is configured to generate a subpixel signal corresponding to photocharge accumulated in response to a photon. The row driver block is configured to generate a first control signal to control the subpixels included in each of the plurality of subpixel groups to accumulate the photocharge in parallel from a first time point to a second time point.

Abstract translation: 图像传感器包括像素阵列和行驱动器块。 像素阵列包括多个子像素组，每个子像素组包括多个子像素。 多个子像素中的每一个被配置为产生对应于响应于光子累积的光电荷的子像素信号。 行驱动块被配置为生成第一控制信号，以控制包括在多个子像素组中的每个子像素组中的子像素，以从第一时间点到第二时间点并行地累积光电荷。