公开(公告)号：US4872040A

公开(公告)日：1989-10-03

申请号：US41812

申请日：1987-04-23

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/167 ,  H01L29/207 ,  H01L29/267 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/167 ,  H01L29/207

摘要： A vertical heterojunction equal area transistor and starting structure therefor is provided in which three epitaxial layers structure with wide band gap external layers and narrower band gap center layer is provided with peripheral impurity concentrations such that the area around the wide gap electrodes is high resistivity and the area around the center narrower gap region is high conductivity. A bipolar transistor of GaAs-Ge-GaAs is described.

公开(公告)号：US4615766A

公开(公告)日：1986-10-07

申请号：US705959

申请日：1985-02-27

申请人： Thomas N. Jackson ,  Gwen Pepper ,  Richard F. Rutz

发明人： Thomas N. Jackson ,  Gwen Pepper ,  Richard F. Rutz

IPC分类号： H01L21/265 ,  H01L21/314 ,  H01L21/324

CPC分类号： H01L21/3245 ,  H01L21/314 ,  Y10S148/084 ,  Y10S438/902

摘要： A method of manufacturing GaAs semiconductor devices includes the steps of emplacing doping impurities by ion implantation on at least one surface of a GaAs substrate, and a step of annealing to remove damage resulting from the implantation of the impurities in the GaAs material. Prior to the annealing, a silicon capping layer is deposited on the surface by either sputtering, evaporation, or vapor deposition to a thickness of 100-10,000 angstroms. Subsequent to the annealing, the silicon capping layer is removed by etching. The silicon cap prevents out-diffusion of arsenic from the GaAs, and has a coefficient of thermal expansion which is sufficiently close to that of the GaAs to inhibit the formation of cracks in the capping layer.

摘要翻译： 一种制造GaAs半导体器件的方法包括以下步骤：通过离子注入在GaAs衬底的至少一个表面上放置掺杂杂质;以及退火步骤，以消除在GaAs材料中注入杂质所引起的损伤。 在退火之前，通过溅射，蒸发或气相沉积将表面上的硅覆盖层沉积到100-10,000埃的厚度。 在退火之后，通过蚀刻去除硅覆盖层。 硅帽防止砷从GaAs的扩散扩散，并且具有足够接近于GaAs的热膨胀系数以抑制覆盖层中的裂纹的形成。

公开(公告)号：US4525731A

公开(公告)日：1985-06-25

申请号：US454784

申请日：1982-12-30

申请人： Terry I. Chappell ,  Thomas N. Jackson ,  Jerry M. Woodall

发明人： Terry I. Chappell ,  Thomas N. Jackson ,  Jerry M. Woodall

IPC分类号： H01L31/10 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/109 ,  H01L27/14 ,  H01L29/88 ,  H01L31/06

CPC分类号： H01L27/1446 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/109

摘要： Optical-to-electrical conversion is accomplished using an undoped region bounded by a tunneling junction of the order of the mean free path of an electron. A number of regions are assembled in series with larger thickness away from the light incident surface. The thickness and doping of the regions for maximum effectiveness in monochromatic light are tailored to produce similar quantities of carriers from the light. A nine section GaAs structure with 50 .ANG. n.sup.+ and p.sup.+ tunneling bounding regions has a 90% quantum efficiency and delivers a 5 volt output with a 0.35 picosecond transit time.

摘要翻译： 使用由电子平均自由程的阶数的隧道结界定的未掺杂区域实现光电转换。 许多区域与光入射表面相比较大地组合成较大的厚度。 针对在单色光中最大效能的区域的厚度和掺杂被定制以从光产生相似量的载流子。 具有50个ANGSTROM n +和p +隧道界限区域的九段GaAs结构具有90％的量子效率，并以0.35皮秒的传输时间提供5伏输出。

公开(公告)号：US08183745B2

公开(公告)日：2012-05-22

申请号：US11745615

申请日：2007-05-08

申请人： Susan Trolier-McKinstry ,  Thomas N. Jackson ,  Kyusun Choi ,  Richard L. Tutwiler ,  In Soo Kim ,  Hyun Soo Kim ,  Sung Kyu Park ,  Ioanna G. Mina

发明人： Susan Trolier-McKinstry ,  Thomas N. Jackson ,  Kyusun Choi ,  Richard L. Tutwiler ,  In Soo Kim ,  Hyun Soo Kim ,  Sung Kyu Park ,  Ioanna G. Mina

IPC分类号： H01L41/08

CPC分类号： B06B1/0629

摘要： An example ultrasound device, such as a transducer array, includes a plurality of ultrasound transducers, each ultrasound transducer having a first electrode, a second electrode, a thin piezoelectric film located between the electrodes, and a substrate supporting the plurality of ultrasound transducers. In some examples, the electrode separation is less than 10 microns, facilitating lower voltage operation than conventional ultrasound transducers.

摘要翻译： 诸如换能器阵列的示例性超声装置包括多个超声换能器，每个超声换能器具有第一电极，第二电极，位于电极之间的薄压电薄膜和支撑多个超声换能器的基板。 在一些示例中，电极间隔小于10微米，便于比传统的超声换能器更低的电压操作。

公开(公告)号：US07190317B2

公开(公告)日：2007-03-13

申请号：US11125432

申请日：2005-05-10

申请人： Douglas H. Werner ,  Thomas N. Jackson ,  Craig S. Deluccia

发明人： Douglas H. Werner ,  Thomas N. Jackson ,  Craig S. Deluccia

IPC分类号： H01Q7/00 ,  H01Q9/00

CPC分类号： H01Q3/26 ,  H01Q7/00

摘要： An antenna comprises an arrangement of electrically conducting segments, the arrangement including intersection points where two or more electrically conducting segments are in electrical communication. Example antennas include a plurality of capacitors located within some or all of the electrically conducting segments. Capacitance values can be determined using an optimization algorithm to obtain desired values of antenna resonance frequency (or frequencies), bandwidth, and/or radiation pattern, and may be adjusted in order to control an antenna parameter such as beam steering direction.

摘要翻译： 天线包括导电段的布置，该布置包括两个或多个导电段电连通的交点。 示例性天线包括位于部分或全部导电段内的多个电容器。 可以使用优化算法来确定电容值，以获得天线谐振频率（或频率），带宽和/或辐射图案的期望值，并且可以调整以控制诸如波束转向方向的天线参数。

公开(公告)号：US5049955A

公开(公告)日：1991-09-17

申请号：US61036

申请日：1987-06-12

申请人： John L. Freeouf ,  Thomas N. Jackson ,  Peter D. Kirchner ,  Jeffrey Y. Tang ,  Jerry M. Woodall

发明人： John L. Freeouf ,  Thomas N. Jackson ,  Peter D. Kirchner ,  Jeffrey Y. Tang ,  Jerry M. Woodall

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76

CPC分类号： H01L29/7606

摘要： A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

摘要翻译： 一种半导体器件，其中发射极材料组成和掺杂分布在邻近带偏移异质结界面的基底中产生电子气，基底中的电子气中的电子受到低屏障的限制，而弹道载体具有其动能 被控制以防止在偏置影响下的静电屏障的间隔散射提供邻近收集器的基部的基本上水平的导带。

公开(公告)号：US4860067A

公开(公告)日：1989-08-22

申请号：US137033

申请日：1987-12-23

申请人： Thomas N. Jackson ,  Alan W. Kleinsasser ,  Jerry M. Woodall

发明人： Thomas N. Jackson ,  Alan W. Kleinsasser ,  Jerry M. Woodall

IPC分类号： H01L29/205 ,  H01L29/66 ,  H01L39/22

CPC分类号： H01L29/66992 ,  H01L29/205 ,  H01L39/228 ,  Y10S257/912

摘要： A low band gap semiconductor heterostructure having a surface adaptable to planar processing and all semiconductor properties supported by a fabrication constraint relaxing substrate that does not provide a low impedance parallel current path. A superconductor normal superconductor device of n-InAs-100 nanometers thick with niobium superconductor electrodes spaced 250 nanometers apart and a 100 nanometer gate in the space. The N-InAs is supported by an undoped GaAs layer on a semi-insulating GaAs substrate. A heterojunction field effect transistor device having a GaAlAs gate over a channel 100 nanometers thick on an undoped GaAs layer on a semi-insulating GaAs substrate.

摘要翻译： 具有适于平面处理的表面的低带隙半导体异质结构和由不提供低阻抗并联电流路径的制造约束放松衬底支持的所有半导体特性。 具有间隔250纳米的铌超导体电极的n-InAs-100纳米厚的超导体正常超导体器件和空间中的100纳米栅极。 N-InAs由半绝缘GaAs衬底上的未掺杂的GaAs层支撑。 一种异质结场效应晶体管器件，其在半绝缘GaAs衬底上的未掺杂的GaAs层上在100纳米厚的沟道上具有GaAlAs栅极。

公开(公告)号：US4849802A

公开(公告)日：1989-07-18

申请号：US233851

申请日：1988-08-16

申请人： Thomas N. Jackson ,  Masanori Murakami ,  William H. Price ,  Sandip Tiwari ,  Jerry M. Woodall ,  Steven L. Wright

发明人： Thomas N. Jackson ,  Masanori Murakami ,  William H. Price ,  Sandip Tiwari ,  Jerry M. Woodall ,  Steven L. Wright

IPC分类号： H01L29/45

CPC分类号： H01L29/452

摘要： In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.

摘要翻译： 在半导体器件中，使用耐火材料和少量的铟作为接触材料制造具有低耐III-V化合物半导体衬底的接触。 通过将Mo，Ge和W与少量的In沉积到掺杂的GaAs晶片上形成接触材料。 800℃退火后获得小于1.0欧姆毫米的接触电阻，在400℃下经过长时间的退火后，电阻不增加。

公开(公告)号：US4751708A

公开(公告)日：1988-06-14

申请号：US363193

申请日：1982-03-29

申请人： Thomas N. Jackson ,  Jerry M. Woodall

发明人： Thomas N. Jackson ,  Jerry M. Woodall

IPC分类号： H01S5/00 ,  H01L33/00 ,  H01S5/028 ,  H01S3/19

CPC分类号： H01S5/0281 ,  H01L33/00

摘要： Degradation of the cleaved light output surface of a semiconductor crystal injection laser is reduced through control of surface recombination by providing an annealed optically transparent coating at least one ingredient of which has a higher bandgap than said crystal over the cleaved light output surface. Crystals of GaAs, GaAlAs and GaInAsP are provided with annealed coatings of ZnS, CdS, CdTe and CdSe.

摘要翻译： 通过提供退火的光学透明涂层，通过控制表面复合来降低半导体晶体注入激光器的切割光输出表面的降解，其中至少一种成分在切割的光输出表面上具有比所述晶体更高的带隙。 提供GaAs，GaAlAs和GaInAsP的晶体，其具有ZnS，CdS，CdTe和CdSe的退火涂层。

公开(公告)号：US4587540A

公开(公告)日：1986-05-06

申请号：US705287

申请日：1985-01-17

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01L21/28 ,  H01L21/308 ,  H01L29/06 ,  H01L29/80 ,  H01L29/08 ,  H01L29/40

CPC分类号： H01L21/308 ,  H01L21/28 ,  H01L29/0653

摘要： The edge of a conformal coating over a mesa is usable to define a shoulder in the vertical dimension of the mesa which in turn is used for positioning. Structures are provided that permit electrodes at precise locations along the length of a mesa. A vertical field effect transistor is set forth with a mesa serving as the channel and the gate electrode positioned at a shoulder formed by the edge dimension of a coating on the sides of the mesa.

摘要翻译： 在台面上的保形涂层的边缘可用于限定台面的垂直尺寸中的肩部，其又用于定位。 提供了允许沿着台面长度的精确位置处的电极的结构。 设置有作为沟道的台面的平面场效应晶体管，位于由台面的侧面上的涂层的边缘尺寸形成的肩部的栅电极。