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公开(公告)号：US4860067A
公开(公告)日：1989-08-22
申请号：US137033
申请日：1987-12-23
IPC分类号： H01L29/205 , H01L29/66 , H01L39/22
CPC分类号： H01L29/66992 , H01L29/205 , H01L39/228 , Y10S257/912
摘要： A low band gap semiconductor heterostructure having a surface adaptable to planar processing and all semiconductor properties supported by a fabrication constraint relaxing substrate that does not provide a low impedance parallel current path. A superconductor normal superconductor device of n-InAs-100 nanometers thick with niobium superconductor electrodes spaced 250 nanometers apart and a 100 nanometer gate in the space. The N-InAs is supported by an undoped GaAs layer on a semi-insulating GaAs substrate. A heterojunction field effect transistor device having a GaAlAs gate over a channel 100 nanometers thick on an undoped GaAs layer on a semi-insulating GaAs substrate.
摘要翻译： 具有适于平面处理的表面的低带隙半导体异质结构和由不提供低阻抗并联电流路径的制造约束放松衬底支持的所有半导体特性。 具有间隔250纳米的铌超导体电极的n-InAs-100纳米厚的超导体正常超导体器件和空间中的100纳米栅极。 N-InAs由半绝缘GaAs衬底上的未掺杂的GaAs层支撑。 一种异质结场效应晶体管器件，其在半绝缘GaAs衬底上的未掺杂的GaAs层上在100纳米厚的沟道上具有GaAlAs栅极。
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公开(公告)号：US4757369A
公开(公告)日：1988-07-12
申请号：US60700
申请日：1987-06-10
IPC分类号： H01L21/338 , H01L21/28 , H01L21/285 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812 , H01L29/167 , H01L23/48 , H01L29/161 , H01L29/62
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
摘要： A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
摘要翻译： 在III-V族金属间半导体晶体表面上的两性掺杂剂层将在形成稳定接触的加热循环中扩散到晶体表面。 接触可以是欧姆的或整流的，这取决于过量的一种晶体成分的局部存在。 在加热时GaAs上的Si层形成整流接触。 当Si层含有As时，接触是欧姆的。
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公开(公告)号：US4638342A
公开(公告)日：1987-01-20
申请号：US419381
申请日：1982-09-17
IPC分类号： H01L29/80 , H01L21/338 , H01L29/772 , H01L29/812 , H01L29/56
CPC分类号： H01L29/8122 , H01L29/7722
摘要： An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.
摘要翻译： 一种在半导体结构中采用二维空间电荷调制的电子装置。 该器件在半导体本体上的德拜长度和远程定位的触点之间具有大致德拜长度的宽触点和整流触点彼此相邻定位。 整流触点的偏压将影响其他触点之间的导通。
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4.发明授权
公开(公告)号：US4597825A
公开(公告)日：1986-07-01
申请号：US718987
申请日：1985-04-02
IPC分类号： H01L21/314 , H01L23/29 , H01L23/31 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L23/3171 , H01L21/314 , H01L23/291 , H01L23/298 , H01L2924/0002
摘要： Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm.sup.2 while the GaAs immersed in a 1:1 HCl:H.sub.2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.
摘要翻译： 结晶化合物半导体被其最易挥发的元素层钝化以防止会妨碍进一步加工的氧化物的形成。 GaAs晶体设置有砷的表面层。 通过暴露于具有大于1.8eV的光子能量的光而形成砷层，功率密度为0.01至0.5瓦特/ cm2，而GaAs浸入1:1的HCl:H 2 O溶液中10-30分钟 。 中间处理钝化GaAs晶体可以在空气中储存和处理，并且通过低温烘烤除去As层。
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公开(公告)号：US4525731A
公开(公告)日：1985-06-25
申请号：US454784
申请日：1982-12-30
IPC分类号： H01L31/10 , H01L27/144 , H01L31/0352 , H01L31/101 , H01L31/109 , H01L27/14 , H01L29/88 , H01L31/06
CPC分类号： H01L27/1446 , H01L31/0352 , H01L31/101 , H01L31/109
摘要： Optical-to-electrical conversion is accomplished using an undoped region bounded by a tunneling junction of the order of the mean free path of an electron. A number of regions are assembled in series with larger thickness away from the light incident surface. The thickness and doping of the regions for maximum effectiveness in monochromatic light are tailored to produce similar quantities of carriers from the light. A nine section GaAs structure with 50 .ANG. n.sup.+ and p.sup.+ tunneling bounding regions has a 90% quantum efficiency and delivers a 5 volt output with a 0.35 picosecond transit time.
摘要翻译： 使用由电子平均自由程的阶数的隧道结界定的未掺杂区域实现光电转换。 许多区域与光入射表面相比较大地组合成较大的厚度。 针对在单色光中最大效能的区域的厚度和掺杂被定制以从光产生相似量的载流子。 具有50个ANGSTROM n +和p +隧道界限区域的九段GaAs结构具有90％的量子效率，并以0.35皮秒的传输时间提供5伏输出。
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6.发明授权
公开(公告)号：US5098859A
公开(公告)日：1992-03-24
申请号：US252634
申请日：1988-10-03
申请人： Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
发明人： Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
IPC分类号： H01L29/45
CPC分类号： H01L29/452
摘要： The control of barriers to carrier flow in a contact between a metal and a higher band gap semiconductor employing an intermediate lower band gap semiconductor with doping and greater than 1.5% lattice mismatch. A WSi metal contact of doped InAs on GaAs of 7.times.10.sup.-6 ohm/cm.sup.2 is provided.This is a continuation application of pending prior application Ser. No. 183,473, filed on Apr. 15, 1988 now abandoned which is a continuation of Ser. No. 876,063, filed on June 14, 1986, now abandoned.
摘要翻译： 控制在金属与较高带隙半导体之间的接触中载流子的障碍，采用具有掺杂和大于1.5％晶格失配的中间低带隙半导体。 提供了7×10-6欧姆/厘米2的GaAs上掺杂InAs的WSi金属接触。 这是待决的先前申请Ser的继续申请。 1988年4月15日提交的第183,473号现在已经放弃，这是Ser的延续。 1986年6月14日提交的876,063号现在已经放弃。
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7.发明授权
公开(公告)号：US4550047A
公开(公告)日：1985-10-29
申请号：US501571
申请日：1983-06-06
申请人： Thomas N. Jackson , Peter D. Kirchner , George D. Pettit , James J. Rosenberg , Jerry M. Woodall , Steven L. Wright
发明人： Thomas N. Jackson , Peter D. Kirchner , George D. Pettit , James J. Rosenberg , Jerry M. Woodall , Steven L. Wright
IPC分类号： C01B33/02 , C30B23/02 , C30B23/06 , C30B23/08 , C30B29/06 , H01L21/203 , B32B3/10 , C30B23/04
CPC分类号： C30B29/06 , C30B23/06 , Y10S148/169 , Y10T428/24314
摘要： A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.
摘要翻译： 用作分子束外延生长装置中用作元素硅的源的硅量，其中硅是单晶晶片的形式，其具有多个通过完全穿过晶片的狭缝分开的电平行细丝，每个 长度尺寸大于宽度和高度尺寸，在每个灯丝端处在宽接触区域处连接并且电流通过宽的接触区域通过细丝。
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公开(公告)号：US5049955A
公开(公告)日：1991-09-17
申请号：US61036
申请日：1987-06-12
IPC分类号： H01L29/73 , H01L21/331 , H01L29/68 , H01L29/737 , H01L29/76
CPC分类号： H01L29/7606
摘要： A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
摘要翻译： 一种半导体器件，其中发射极材料组成和掺杂分布在邻近带偏移异质结界面的基底中产生电子气，基底中的电子气中的电子受到低屏障的限制，而弹道载体具有其动能 被控制以防止在偏置影响下的静电屏障的间隔散射提供邻近收集器的基部的基本上水平的导带。
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公开(公告)号：US4849802A
公开(公告)日：1989-07-18
申请号：US233851
申请日：1988-08-16
申请人： Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
发明人： Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
IPC分类号： H01L29/45
CPC分类号： H01L29/452
摘要： In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.
摘要翻译： 在半导体器件中，使用耐火材料和少量的铟作为接触材料制造具有低耐III-V化合物半导体衬底的接触。 通过将Mo，Ge和W与少量的In沉积到掺杂的GaAs晶片上形成接触材料。 800℃退火后获得小于1.0欧姆毫米的接触电阻，在400℃下经过长时间的退火后，电阻不增加。
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公开(公告)号：US4751708A
公开(公告)日：1988-06-14
申请号：US363193
申请日：1982-03-29
CPC分类号： H01S5/0281 , H01L33/00
摘要： Degradation of the cleaved light output surface of a semiconductor crystal injection laser is reduced through control of surface recombination by providing an annealed optically transparent coating at least one ingredient of which has a higher bandgap than said crystal over the cleaved light output surface. Crystals of GaAs, GaAlAs and GaInAsP are provided with annealed coatings of ZnS, CdS, CdTe and CdSe.
摘要翻译： 通过提供退火的光学透明涂层，通过控制表面复合来降低半导体晶体注入激光器的切割光输出表面的降解，其中至少一种成分在切割的光输出表面上具有比所述晶体更高的带隙。 提供GaAs，GaAlAs和GaInAsP的晶体，其具有ZnS，CdS，CdTe和CdSe的退火涂层。
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