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149 条记录 (耗时 0.027 秒)

    Method of manufacturing a semiconductor device
    21.
    发明申请
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20050093037A1

    公开(公告)日：2005-05-05

    申请号：US10994390

    申请日：2004-11-23

    申请人： Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki ,  Jun Koyama ,  Yasuko Watanabe

    发明人： Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki ,  Jun Koyama ,  Yasuko Watanabe

    IPC分类号： H01L21/77 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786 ,  H01L31/062 ,  H01L31/12

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/14625 ,  H01L27/14665 ,  H01L27/14678 ,  H01L27/14692 ,  H01L29/78621 ,  H01L31/125

    摘要： The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source region, a drain region, and a channel formation region of a transistor are formed at the same time an n type semiconductor layer and p type semiconductor layer of a photoelectric conversion element are formed. Connection wiring lines to be electrically connected to the n type semiconductor layer and p type semiconductor layer of the photoelectric conversion element are formed at the same time a source wiring line and a drain wiring line of a transistor are formed. In a doping step using an impurity element that gives one conductivity type, a semiconductor layer of an n-channel transistor and the n type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element and a semiconductor layer of a p-channel transistor and the p type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element.

    摘要翻译： 在制造在绝缘表面上具有晶体管和光电转换元件的半导体器件的方法中，掩模的数量减少。 在本发明的制造方法中，同时形成用作晶体管的源极区，漏极区和沟道形成区的半导体层，同时形成光电转换元件的n型半导体层和p型半导体层 形成。 与晶体管的源极配线和漏极布线同时形成与电子转换元件的n型半导体层和p型半导体层电连接的连接配线。 在使用提供一种导电类型的杂质元素的掺杂步骤中，n沟道晶体管的半导体层和光电转换元件的n型半导体层同时掺杂有杂质元素和p沟道的半导体层 晶体管和光电转换元件的p型半导体层同时掺杂有杂质元素。

    Display device and electronic apparatus
    24.
    发明授权
    Display device and electronic apparatus 有权
    显示设备和电子设备

    公开(公告)号：US08907868B2

    公开(公告)日：2014-12-09

    申请号：US12269921

    申请日：2008-11-13

    申请人： Yu Yamazaki

    发明人： Yu Yamazaki

    IPC分类号： G09G3/30 ,  G09G3/20 ,  H01L27/32 ,  G09G3/00 ,  H04M1/02 ,  H01L51/52

    CPC分类号： H01L27/3267 ,  G09G3/00 ,  G09G3/20 ,  G09G3/30 ,  G09G2300/0426 ,  G09G2300/0443 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0847 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2310/0267 ,  H01L27/3211 ,  H01L27/322 ,  H01L51/5271 ,  H04M1/0214 ,  H04M2250/16 ,  H04M2250/52

    摘要： According to one feature of the invention, a display device comprises a pixel including a first sub-pixel having a first light-emitting element and a second sub-pixel having a second light-emitting element, a first source driver connected to a first source line included in the first sub-pixel, and a second source driver connected to a second source line included in the second sub-pixel. The first sub-pixel and the second sub-pixel are provided over one surface of a light-transmitting substrate, and a first display region using the first sub-pixel over one surface of the substrate and a second display region using the second sub-pixel over the opposite surface the substrate are provided. Accordingly, it is possible to provide a display device that realizes sophistication and a high added value, which includes a display region in each of one and the opposite sides.

    摘要翻译： 根据本发明的一个特征，一种显示装置包括：像素，包括具有第一发光元件的第一子像素和具有第二发光元件的第二子像素;第一源极驱动器，连接到第一源极 包括在第一子像素中的线，以及连接到包括在第二子像素中的第二源极线的第二源极驱动器。 第一子像素和第二子像素设置在透光基板的一个表面上，并且在基板的一个表面上使用第一子像素的第一显示区域和使用第二子像素的第二显示区域， 提供衬底的相对表面上的像素。 因此，可以提供实现复杂性和高附加值的显示装置，该显示装置包括一侧和相对侧的显示区域。

    Display device having a light emitting element
    25.
    发明授权
    Display device having a light emitting element 有权
    具有发光元件的显示装置

    公开(公告)号：US08760374B2

    公开(公告)日：2014-06-24

    申请号：US11121587

    申请日：2005-05-04

    申请人： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki

    发明人： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki

    IPC分类号： G09G3/32

    CPC分类号： G09G3/3241 ,  G09G3/2022 ,  G09G3/3283 ,  G09G3/3291 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2320/0238 ,  G09G2320/043

    摘要： When a thin film transistor has an LDD structure or a double gate structure, the number of manufacturing steps increases, which may decrease the yield. The invention provides a display device where the influence of off current is reduced by a method different from the conventional one. According to the invention, a pass element is provided at one electrode of a light emitting element so as not to flow the off current of a transistor for driving the light emitting element through the light emitting element in a non-lighting period. The pass element allows the off current to flow outside, that is, the off current can be bypassed outside through the pass element.

    摘要翻译： 当薄膜晶体管具有LDD结构或双栅结构时，制造步骤的数量增加，这可能降低产量。 本发明提供了一种显示装置，其中通过与常规方法不同的方法来减小关断电流的影响。 根据本发明，在发光元件的一个电极处提供通过元件，以便在非发光时间段内不通过发光元件流过用于驱动发光元件的晶体管的截止电流。 通过元件允许关闭电流流出外部，即，可以通过通过元件将关断电流旁路到外部。

    Method of driving light-emitting device
    26.
    发明授权
    Method of driving light-emitting device 有权

    公开(公告)号：US08593381B2

    公开(公告)日：2013-11-26

    申请号：US13609712

    申请日：2012-09-11

    申请人： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Tomoyuki Iwabuchi

    发明人： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Tomoyuki Iwabuchi

    IPC分类号： G09G3/32

    CPC分类号： G09G3/2007 ,  G09G2320/043

    摘要： Degradations in light emitting elements occur with the passage of time. The invention provides a method of driving a light-emitting device provided with a plurality of pixels, which includes a light-emitting means with a first and a second electrodes, a drive means for supplying the light-emitting means with a current in response to an analog video signal, and a setting means for setting a sustaining period and an off time period within a frame period. The method of driving a light-emitting device is characterized by including the steps of: supplying the light-emitting means with the current in response to the analog video signal during the sustaining period; and turning the drive means off thereby to make the light-emitting means nonluminous or making the first and the second electrodes identical in potential thereby to make the light-emitting means nonluminous during the off time period.

    Capacitor, semiconductor device and manufacturing method thereof
    27.
    发明授权
    Capacitor, semiconductor device and manufacturing method thereof 有权
    电容器，半导体器件及其制造方法

    公开(公告)号：US08502232B2

    公开(公告)日：2013-08-06

    申请号：US12077161

    申请日：2008-03-14

    申请人： Satoshi Murakami ,  Yoshiharu Hirakata ,  Etsuko Fujimoto ,  Yu Yamazaki ,  Shunpei Yamazaki

    发明人： Satoshi Murakami ,  Yoshiharu Hirakata ,  Etsuko Fujimoto ,  Yu Yamazaki ,  Shunpei Yamazaki

    IPC分类号： H01L27/12

    CPC分类号： H01L28/40 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

    摘要： A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.

    摘要翻译： 提供了高度可靠的电容器，具有高操作性能和可靠性的半导体器件及其制造方法。 由第一导电膜102，由绝缘材料制成的电介质103和第二导电膜104形成的电容器的特征在于，在电介质103中偶然形成的销孔106填充有绝缘材料（填料） 107由树脂材料制成。 这可以防止第一导电膜102和第二导电膜104之间的短路。该电容器用作设置在半导体器件的像素中的存储电容器。

    Light emitting device and driving method thereof
    29.
    发明授权
    Light emitting device and driving method thereof 有权
    发光装置及其驱动方法

    公开(公告)号：US08248330B2

    公开(公告)日：2012-08-21

    申请号：US12844041

    申请日：2010-07-27

    申请人： Mitsuaki Osame ,  Yu Yamazaki

    发明人： Mitsuaki Osame ,  Yu Yamazaki

    IPC分类号： G09G3/00

    CPC分类号： G09G3/3275 ,  G09G3/22 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/0289 ,  G09G2320/043 ,  G09G2320/0666 ,  G09G2330/02 ,  G09G2330/028

    摘要： A light emitting device which is able to suppress power consumption while a balance of white light is maintained is provided. According to the present invention, either the potential level of the Hi video signal or Lo video signal which is given to a gate electrode of a transistor, and the potential level of the power source lines are changed by the respective corresponding colors. Concretely, the potential level at the side of Lo and the potential level of the power source line are made to be changed by the respective corresponding colors when a transistor which controls current supplied to a light emitting element is a p-channel type. Conversely, the potential level at the side of the Hi and potential level of the power source line are made to be changed by the respective corresponding colors when a transistor which controls current supplied to a light emitting element is an n-channel type.

    摘要翻译： 提供一种能够在维持白光平衡的同时抑制功耗的发光装置。 根据本发明，赋予晶体管的栅电极的Hi视频信号或Lo视频信号的电位电平和电源线的电位电平被各自相应的颜色改变。 具体地说，当控制提供给发光元件的电流为p沟道型的晶体管时，通过各自的相应颜色，使Lo侧的电位电平和电源线的电位电平变化。 相反，当控制提供给发光元件的电流为n沟道型的晶体管时，使电源线的一侧的电位电平和电源线的电位电位变化为各自的相应颜色。