Flow controlled liner having spatially distributed gas passages

    公开(公告)号:US10170342B2

    公开(公告)日:2019-01-01

    申请号:US15716142

    申请日:2017-09-26

    Abstract: Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.

    SUSCEPTOR SUPPORT SHAFT FOR IMPROVED WAFER TEMPERATURE UNIFORMITY AND PROCESS REPEATABILITY
    22.
    发明申请
    SUSCEPTOR SUPPORT SHAFT FOR IMPROVED WAFER TEMPERATURE UNIFORMITY AND PROCESS REPEATABILITY 有权
    用于改进波浪温度均匀性和过程可重复性的SUSCEPTOR支持轴

    公开(公告)号:US20140251208A1

    公开(公告)日:2014-09-11

    申请号:US14182634

    申请日:2014-02-18

    CPC classification number: H01L21/68792 B05C11/08 H01L21/68742

    Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber.

    Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座,其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化,即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量,这增加了处理室的斜坡上升和下降速率。

    Chamber injector
    25.
    发明授权

    公开(公告)号:US11807931B2

    公开(公告)日:2023-11-07

    申请号:US17961040

    申请日:2022-10-06

    CPC classification number: C23C16/45572 C23C16/4583 C23C16/46

    Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

    PROCESSING CHAMBER FOR THERMAL PROCESSES
    28.
    发明申请

    公开(公告)号:US20200373195A1

    公开(公告)日:2020-11-26

    申请号:US16854295

    申请日:2020-04-21

    Abstract: Embodiments of the disclosure include methods and apparatus for a thermal chamber with a low thermal mass. In one embodiment, a chamber is disclosed that includes a body, a susceptor positioned within the body, a first set of heating devices positioned in an upper portion of the body above the susceptor and a second set of heating devices positioned in a lower portion of the body below the susceptor, wherein each of the first set of heating devices have a heating element having a longitudinal axis extending in a first direction, and each of the second set of heating devices have a heating element having a longitudinal axis extending in a second direction that is orthogonal to the first direction, and wherein each of the heating elements have ends that are exposed to ambient environment.

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