公开(公告)号：US11450509B2

公开(公告)日：2022-09-20

申请号：US16735494

申请日：2020-01-06

Applicant: Applied Materials, Inc.

Inventor： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/455

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

公开(公告)号：US09929029B2

公开(公告)日：2018-03-27

申请号：US15292680

申请日：2016-10-13

Applicant: Applied Materials, Inc.

Inventor： Jeffrey Tobin

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67201 ,  H01L21/68 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

Abstract: Embodiments described herein relate to a substrate carrier system. The substrate carrier system includes a carrier for transferring a substrate within a multi-chamber processing system. The carrier may be placed in a load lock chamber for receiving the substrate, and the substrate is transferred to a processing chamber on the carrier. In the processing chamber, the carrier, with substrate, is disposed on a susceptor. The carrier can also enhance thermal control of the edge of the substrate in the processing chamber. The substrate carrier system further includes positioning features for repeatable positioning of the substrate in the processing chamber and repeatable positioning of the carrier in the load lock chamber and the processing chamber.

公开(公告)号：US09905454B2

公开(公告)日：2018-02-27

申请号：US14965228

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Jeffrey Tobin

IPC: H01L21/68 ,  H01L21/687 ,  C23C16/458 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677 ,  C30B35/00

CPC classification number: H01L21/68742 ,  C23C16/4582 ,  C23C16/4583 ,  C30B25/12 ,  C30B35/005 ,  H01L21/67115 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68735 ,  H01L21/68764

Abstract: In one embodiment, a substrate support assembly includes a susceptor for supporting a substrate, and a supporting transfer mechanism coupled to the susceptor, the supporting transfer mechanism having a surface for supporting a peripheral edge of the substrate, the supporting transfer mechanism being movable relative to an upper surface of the susceptor.

公开(公告)号：US10529541B2

公开(公告)日：2020-01-07

申请号：US15462507

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

IPC: H01J37/32

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

公开(公告)号：US09403251B2

公开(公告)日：2016-08-02

申请号：US14042864

申请日：2013-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sairaju Tallavarjula ,  Kevin Joseph Bautista ,  Jeffrey Tobin

IPC: F26B19/00 ,  A45D20/40 ,  F27D5/00 ,  B23Q3/18 ,  H05B3/00 ,  H01L21/67 ,  H01L21/687

CPC classification number: B23Q3/18 ,  H01L21/67115 ,  H01L21/6875 ,  H05B3/0038 ,  H05B3/0047

Abstract: Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.

Abstract translation: 本文提供了用于半导体衬底处理室的衬底支撑件的边缘环的实施例。 在一些实施例中，用于半导体处理室的边缘环可以包括具有中心开口，内边缘，外边缘，上表面和下表面的环形主体，靠近内边缘设置并向下延伸的内唇缘 以及从所述内唇缘向上延伸并且沿着所述环形体的内边缘设置的多个突起，其中所述多个突起被布置成将衬底支撑在所述内唇缘上方且在所述中心开口上方，其中， 内唇被配置为当衬底设置在多个突起上时，基本上防止光辐射在设置在边缘环上方的第一容积和设置在边缘环下方的第二体积之间行进。

公开(公告)号：US09048190B2

公开(公告)日：2015-06-02

申请号：US14044090

申请日：2013-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey Tobin ,  Bernard L. Hwang ,  Canfeng Lai ,  Lara Hawrylchak ,  Wei Liu ,  Johanes Swenberg

IPC: H01L21/311 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽下方的处理室下部处理体积中，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。

公开(公告)号：US10428441B2

公开(公告)日：2019-10-01

申请号：US15627149

申请日：2017-06-19

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Theresa K. Guarini ,  Jeffrey Tobin ,  Lara Hawrylchak ,  Peter Stone ,  Chi Wei Lo ,  Saurabh Chopra

IPC: C30B25/18 ,  C30B29/06 ,  C30B29/08

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US10221483B2

公开(公告)日：2019-03-05

申请号：US14691496

申请日：2015-04-20

Applicant: Applied Materials, Inc.

Inventor： Kartik Shah ,  Chaitanya A. Prasad ,  Kevin Joseph Bautista ,  Jeffrey Tobin ,  Umesh M. Kelkar ,  Lara Hawrylchak

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67

Abstract: Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.

公开(公告)号：US09558982B2

公开(公告)日：2017-01-31

申请号：US14030728

申请日：2013-09-18

Applicant: Applied Materials, Inc.

Inventor： Heng Pan ,  Sairaju Tallavarjula ,  Kevin J. Bautista ,  Jeffrey Tobin

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/6835 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68735

Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.

Abstract translation: 本公开的实施例一般涉及在处理室中支撑衬底的支撑环。 在一个实施例中，支撑环包括内环，通过平坦部分连接到内环的外周边的外环，从内环的内周径向向内延伸以形成支撑凸缘的边缘，以及 从边缘唇缘的顶表面向上延伸的基底支撑件。 衬底支撑件可以是围绕边缘唇缘的圆周设置的连续环形体。 衬底支撑件从后侧支撑基底围绕其整个周边，具有最小化的接触表面，以使衬底与边缘唇缘热断开。 特别地，基板支撑件提供与基板的背面的实质的线接触。

公开(公告)号：US09385004B2

公开(公告)日：2016-07-05

申请号：US14298389

申请日：2014-06-06

Applicant: Applied Materials, Inc.

Inventor： Mehran Behdjat ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Norman Tam ,  Jeffrey Tobin ,  Jiping Li ,  Martin Tran

IPC: H01L21/683 ,  H01L21/324 ,  F16C13/00 ,  B05D7/22 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/68735 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68757

Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring body having an inner peripheral surface and an outer peripheral surface, wherein the ring body comprises an opaque quartz glass material and wherein the ring body is coated with an optical transparent layer. The optical transparent layer has a coefficient of thermal expansion that is substantially matched or similar to the opaque quartz glass material to reduce thermal expansion mismatch that may cause thermal stress under high thermal loads. In one example, the opaque quartz glass material is synthetic black quartz and the optical transparent layer comprises a clear fused quartz material.

Abstract translation: 本公开的实施例一般涉及在热处理室中使用的支撑筒。 在一个实施例中，支撑筒包括具有内周表面和外周表面的环体，其中环体包括不透明的石英玻璃材料，并且其中环体涂覆有光学透明层。 光学透明层的热膨胀系数基本上与不透明的石英玻璃材料匹配或类似，以减少在高热负荷下可能引起热应力的热膨胀失配。 在一个实例中，不透明石英玻璃材料是合成黑色石英，光学透明层包括透明的熔融石英材料。