公开(公告)号：US12037701B2

公开(公告)日：2024-07-16

申请号：US17218892

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Shu-Kwan Danny Lau ,  Brian H. Burrows ,  Lori Washington ,  Herman Diniz ,  Martin A. Hilkene ,  Richard O. Collins ,  Nyi O. Myo ,  Manish Hemkar ,  Schubert S. Chu

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US10269614B2

公开(公告)日：2019-04-23

申请号：US14885016

申请日：2015-10-16

Applicant: Applied Materials, Inc.

Inventor： Schubert S. Chu ,  Kartik Shah ,  Anhthu Ngo ,  Karthik Ramanathan ,  Nitin Pathak ,  Nyi O. Myo ,  Paul Brillhart ,  Richard O. Collins ,  Kevin Joseph Bautista ,  Edric Tong ,  Zhepeng Cong ,  Anzhong Chang ,  Kin Pong Lo ,  Manish Hemkar

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

公开(公告)号：US11784076B2

公开(公告)日：2023-10-10

申请号：US17866152

申请日：2022-07-15

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Richard O. Collins ,  Richard Giljum ,  Alexander Berger

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/673 ,  H01L21/67 ,  H01L21/68

CPC classification number: H01L21/67778 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67346 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68 ,  H01L21/68707 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757

Abstract: A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

公开(公告)号：US11424149B2

公开(公告)日：2022-08-23

申请号：US16899043

申请日：2020-06-11

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Richard O. Collins ,  Richard Giljum ,  Alexander Berger

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/673 ,  H01L21/67 ,  H01L21/68

Abstract: A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

公开(公告)号：USD716240S1

公开(公告)日：2014-10-28

申请号：US29472055

申请日：2013-11-07

Applicant: Applied Materials, Inc.

Designer： Shu-Kwan Lau ,  Mehmet Tugrul Samir ,  Anzhong Chang ,  Paul Brillhart ,  Richard O. Collins

公开(公告)号：US11781212B2

公开(公告)日：2023-10-10

申请号：US17224537

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Schubert Chu ,  Nyi Oo Myo ,  Kartik Bhupendra Shah ,  Zhiyuan Ye ,  Richard O. Collins

IPC: C23C14/24 ,  H01L21/67 ,  C23C14/50

CPC classification number: C23C14/24 ,  C23C14/50 ,  H01L21/67017

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

公开(公告)号：US11171023B2

公开(公告)日：2021-11-09

申请号：US15288404

申请日：2016-10-07

Applicant: Applied Materials, Inc.

Inventor： Schubert S. Chu ,  Douglas E. Holmgren ,  Kartik Shah ,  Palamurali Gajendra ,  Nyi O. Myo ,  Preetham Rao ,  Kevin Joseph Bautista ,  Zhiyuan Ye ,  Martin A. Hilkene ,  Errol Antonio C. Sanchez ,  Richard O. Collins

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US10755955B2

公开(公告)日：2020-08-25

申请号：US15894735

申请日：2018-02-12

Applicant: Applied Materials, Inc.

Inventor： Masato Ishii ,  Richard O. Collins ,  Richard Giljum ,  Alexander Berger

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/673 ,  H01L21/68 ,  H01L21/67

Abstract: A substrate processing system is disclosed which includes a substrate input/output chamber coupled to a transfer chamber, and one or more processing chambers coupled to the transfer chamber, wherein the substrate input/output chamber includes a plurality of stacked carrier holders, and a platen, wherein the platen includes a plurality of alignment pads and a plurality of openings formed in a recessed flange along a peripheral edge of the platen.

公开(公告)号：US20130152859A1

公开(公告)日：2013-06-20

申请号：US13766230

申请日：2013-02-13

Applicant: Applied Materials, Inc.

Inventor： Richard O. Collins ,  Kailash Kiran Patalay ,  Jean R. Vatus ,  Zhepeng Cong

IPC: H01L21/68

CPC classification number: H01L21/68 ,  C30B25/12 ,  H01L21/67259 ,  H01L21/68785 ,  H01L21/68792

Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

公开(公告)号：US12188148B2

公开(公告)日：2025-01-07

申请号：US17131290

申请日：2020-12-22

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Zhiyuan Ye ,  Richard O. Collins ,  Brian Hayes Burrows

IPC: H01L21/67 ,  C30B25/08 ,  C30B25/14

Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.