公开(公告)号：US20220349051A1

公开(公告)日：2022-11-03

申请号：US17729645

申请日：2022-04-26

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Jereld Lee Winkler ,  Moataz Bellah Mousa ,  Mustafa Muhammad ,  Paul Ma ,  Hichem M'Saad ,  Ying-Shen Kuo ,  Chad Lunceford ,  Shuaidi Zhang

IPC: C23C16/44 ,  B08B7/00 ,  B08B9/08 ,  B08B5/00 ,  H01J37/32

Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

公开(公告)号：US20210180184A1

公开(公告)日：2021-06-17

申请号：US17113242

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L29/43

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

公开(公告)号：US12241158B2

公开(公告)日：2025-03-04

申请号：US17376336

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Charith Eranga Nanayakkara

IPC: C23C16/14 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for forming transition metal layers on a surface of a substrate are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.

公开(公告)号：US20240401190A1

公开(公告)日：2024-12-05

申请号：US18673554

申请日：2024-05-24

Applicant: ASM IP Holding B.V.

Inventor： Do Han Kim ,  Jereld Lee Winkler ,  Amit Mishra ,  Paul Ma ,  Todd Robert Dunn ,  Moataz Bellah Mousa

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

公开(公告)号：US20240371662A1

公开(公告)日：2024-11-07

申请号：US18651935

申请日：2024-05-01

Applicant: ASM IP Holding B.V.

Inventor： Rajkumar Jakkaraju ,  Paul Ma ,  Yi Zhang ,  Dong Li

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Described herein are example, method, system and apparatus for supporting a substrate in a chamber wherein the substrate comprises a surface, contacting the surface of the substrate with an excited species within the chamber, contacting the surface of the substrate with an etchant species within the chamber and removing organic residue or non-organic residue, or a combination thereof, from the surface of the substrate responsive to executing the above steps.

公开(公告)号：US20240258154A1

公开(公告)日：2024-08-01

申请号：US18425107

申请日：2024-01-29

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Eric Christopher Stevens ,  Amit Mishra ,  Chad Russell Lunceford ,  Paul Ma

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/3205

CPC classification number: H01L21/68735 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/4585 ,  C23C16/52 ,  H01L21/32051 ,  H01L21/68757 ,  H01L21/68764

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor plate and a susceptor attachment. The susceptor attachment can comprise a ramp region and a conductance control region above and exterior to the ramp region. Methods, systems, and assemblies can be used to obtain desired (e.g., composition and/or thickness) profiles of material on a substrate surface.

公开(公告)号：US20240191352A1

公开(公告)日：2024-06-13

申请号：US18530321

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Jacqueline Wrench ,  Paul Ma ,  Todd Robert Dunn ,  Jonathan Bakke ,  Eric James Shero ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4485 ,  C23C16/45561

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

公开(公告)号：US20240133033A1

公开(公告)日：2024-04-25

申请号：US18403024

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Jacqueline Wrench ,  Shuaidi Zhang ,  Arjav Prafulkumar Vashi ,  Shubham Garg ,  Todd Robert Dunn ,  Moataz Bellah Mousa ,  Jonathan Bakke ,  Ibrahim Mohamed ,  Paul Ma ,  Bo Wang ,  Eric Shero ,  Jereld Lee Winkler

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45561 ,  C23C16/52

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

公开(公告)号：US11901175B2

公开(公告)日：2024-02-13

申请号：US17859929

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  C23C16/24 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32724 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02315 ,  H01L21/68714 ,  H01L21/76897 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02208 ,  H01L21/67184

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US11885013B2

公开(公告)日：2024-01-30

申请号：US17113242

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: C23C16/34 ,  C23C16/455 ,  H01L29/43 ,  C23C16/52

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01L29/43

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.