公开(公告)号：US20230160060A1

公开(公告)日：2023-05-25

申请号：US18100637

申请日：2023-01-24

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: C23C16/24 ,  C23C16/455 ,  C23C16/02

CPC classification number: C23C16/24 ,  C23C16/45536 ,  C23C16/0209

Abstract: A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

公开(公告)号：US20230098575A1

公开(公告)日：2023-03-30

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20230084552A1

公开(公告)日：2023-03-16

申请号：US17902272

申请日：2022-09-02

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: H01L21/02

Abstract: A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface, and providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface.

公开(公告)号：US20220223411A1

公开(公告)日：2022-07-14

申请号：US17571835

申请日：2022-01-10

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: H01L21/02 ,  H01L21/033 ,  B05D1/00

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises a Si—H bond.

公开(公告)号：US20210249303A1

公开(公告)日：2021-08-12

申请号：US17157467

申请日：2021-01-25

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses and a plurality of lateral spaces. The recesses and lateral spaces are at least partially filled with a gap filling fluid.

公开(公告)号：US10784102B2

公开(公告)日：2020-09-22

申请号：US16280964

申请日：2019-02-20

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02 ,  H01L21/033

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.

公开(公告)号：US10665452B2

公开(公告)日：2020-05-26

申请号：US16018692

申请日：2018-06-26

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC: H01L21/02 ,  H01L21/265 ,  H01L29/36 ,  H01L29/417 ,  H01L21/225 ,  H01L29/08

Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US10269558B2

公开(公告)日：2019-04-23

申请号：US15388410

申请日：2016-12-22

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.

公开(公告)号：US20240030064A1

公开(公告)日：2024-01-25

申请号：US18374832

申请日：2023-09-29

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/76837 ,  H01L21/02274 ,  H01L21/02211 ,  H01L21/0234 ,  H01J37/32449 ,  H01J37/32899 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32834 ,  H01J2237/332

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses and a plurality of lateral spaces. The recesses and lateral spaces are at least partially filled with a gap filling fluid.

公开(公告)号：US20230335392A1

公开(公告)日：2023-10-19

申请号：US18300301

申请日：2023-04-13

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Makoto Igarashi ,  Hideaki Fukuda ,  Aurelie Kuroda ,  Timothee Blanquart ,  Takahiro Onuma

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/482 ,  C23C16/52 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.