公开(公告)号：US20250037994A1

公开(公告)日：2025-01-30

申请号：US18782382

申请日：2024-07-24

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Hirotsugu Sugiura ,  Yoshiyuki Kikuchi ,  Abhudaya Mishra ,  Alexey Remnev

IPC: H01L21/02 ,  H01J37/32

Abstract: A method of filling trenches on a surface of a substrate is provided. The method may comprise the steps of: positioning a substrate on a substrate support, the substrate support disposed within a reaction chamber, wherein a pressure of the reaction chamber is less than 200 Pa; flowing a carbon precursor into the reaction chamber continuously; flowing an etching gas into the reaction chamber continuously; generating a plasma in the reaction chamber by applying a first radio frequency (RF) power to one of one or more electrodes of the reaction chamber; and depositing an amorphous carbon layer in the trenches on the substrate.

公开(公告)号：US12125700B2

公开(公告)日：2024-10-22

申请号：US17148391

申请日：2021-01-13

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Hirotsugu Sugiura ,  Yoshio Susa

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/0228

Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.

公开(公告)号：US20240043990A1

公开(公告)日：2024-02-08

申请号：US18227485

申请日：2023-07-28

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa

IPC: C23C16/04 ,  C23C16/50 ,  C23C16/56 ,  C23C16/26 ,  C23C16/32 ,  C23C16/40 ,  C23C16/34 ,  C23C16/36

CPC classification number: C23C16/045 ,  C23C16/50 ,  C23C16/56 ,  C23C16/26 ,  C23C16/325 ,  C23C16/401 ,  C23C16/345 ,  C23C16/36

Abstract: A method for forming a layer on a low-density pattern region having first recesses and a high-density pattern region having second recesses formed on a substrate to be processed, includes a first step of forming a first layer in the first recesses so as to be higher than the first recess top and forming a second layer in the second recesses so as to be higher than the second recess top, an etching step of etching a first layer so as to be higher than the first recess top and of etching a second layer so as to be lower than the second recess top, and a second step of forming a third layer on the first layer and of forming a fourth layer in the second recesses so as to be higher than the second recess top.

公开(公告)号：US11705333B2

公开(公告)日：2023-07-18

申请号：US17323321

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Ryo Miyama ,  Yoshiyuki Kikuchi

IPC: H01L21/033 ,  H01J37/32 ,  C23C16/56 ,  C23C16/26 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  C23C16/26 ,  C23C16/56 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0332 ,  H01J2237/332 ,  H01L21/31053 ,  H01L21/31122

Abstract: Methods and systems for forming a structure including multiple carbon layers and structures formed using the method or system are disclosed. Exemplary methods include forming a first carbon layer and a second carbon layer, wherein a density and/or other property of the first carbon layer differs from the corresponding property of the second carbon layer.

公开(公告)号：US20220251707A1

公开(公告)日：2022-08-11

申请号：US17591070

申请日：2022-02-02

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC: C23C16/513 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/26 ,  C23C16/56

Abstract: Methods and systems for forming a structure and structures formed using the methods or systems are disclosed. Exemplary methods include depositing material on a surface of the substrate and treating the deposited material to form treated material. The methods can be used to fill recesses on a surface of a substrate.

公开(公告)号：US20220178023A1

公开(公告)日：2022-06-09

申请号：US17543023

申请日：2021-12-06

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Naoki Umehara ,  Yu Min Huang

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/505 ,  C23C16/56

Abstract: Methods and systems for forming a structure including silicon-carbon material and structures formed using the methods or systems are disclosed. Exemplary methods include providing a first gas to the reaction space, providing a silicon-carbon precursor to the reaction space, ceasing a flow of the silicon-carbon precursor to the reaction space, forming a first plasma within the reaction space to thereby deposit silicon-carbon material on a surface of the substrate, and optionally treating the silicon-carbon material with activated species to form treated silicon-carbon material.

公开(公告)号：US11348766B2

公开(公告)日：2022-05-31

申请号：US16813356

申请日：2020-03-09

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower plate having a plate part provided with a plurality of through holes and formed of a conductor, a ring-shaped part connected to an outer edge of the plate part, surrounding the plate part and formed of a conductor and a lead wire embedded in the ring-shaped part and surrounding the plate part and the susceptor in plan view, the shower plate being provided so as to face the susceptor in the chamber, and a DC power supply that supplies a direct current to the lead wire.

公开(公告)号：US20220059340A1

公开(公告)日：2022-02-24

申请号：US17401324

申请日：2021-08-13

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/46 ,  C23C16/40 ,  C23C16/44

Abstract: Methods for forming a laminate film on substrate by a plasma-enhanced cyclical deposition process are provided. The methods may include: providing a substrate into a reaction chamber, and depositing on substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first metal oxide film and the second metal oxide film comprises, contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N2O).

公开(公告)号：US20210238742A1

公开(公告)日：2021-08-05

申请号：US17166660

申请日：2021-02-03

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Ryo Miyama ,  Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC: C23C16/455 ,  C23C16/26

Abstract: Methods and systems for forming a structure including carbon material and structures formed using the method or system are disclosed. Exemplary methods include providing an inert gas to the reaction chamber for plasma ignition, providing a carbon precursor to the reaction chamber, forming a plasma within the reaction chamber to form an initially viscous carbon material on a surface of the substrate, wherein the initially viscous carbon material becomes carbon material, and treating the carbon material with activated species to form treated carbon material.

公开(公告)号：US20210151348A1

公开(公告)日：2021-05-20

申请号：US16950899

申请日：2020-11-17

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Yan Zhang ,  Yoshio Susa ,  Atsuki Fukazawa

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23C16/04

Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.