公开(公告)号：US20220033968A1

公开(公告)日：2022-02-03

申请号：US17145333

申请日：2021-01-09

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

公开(公告)号：US10822695B2

公开(公告)日：2020-11-03

申请号：US16834283

申请日：2020-03-30

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US10714335B2

公开(公告)日：2020-07-14

申请号：US15949990

申请日：2018-04-10

Applicant: ASM IP HOLDING B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Tae Hee Yoo ,  Wan Gyu Lim ,  Jin Geun Yu

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  C23C16/50 ,  C23C16/455 ,  C23C16/34

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

公开(公告)号：US10662525B2

公开(公告)日：2020-05-26

申请号：US15202468

申请日：2016-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US20180171477A1

公开(公告)日：2018-06-21

申请号：US15835352

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

公开(公告)号：USD796458S1

公开(公告)日：2017-09-05

申请号：US29558852

申请日：2016-03-22

Applicant: ASM IP Holding B.V.

Designer： Hyun Soo Jang ,  Jeong Ho Lee ,  Young Hoon Kim ,  Young Hyo Jeon

公开(公告)号：US20160284534A1

公开(公告)日：2016-09-29

申请号：US15080004

申请日：2016-03-24

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract translation: 提供了通过原子层沉积（ALD）方法在基板上形成具有目标厚度T的薄膜的方法。 该方法包括n个处理条件，每个处理条件各自具有不同于其的成长速率，并将a1确定为第一处理条件到第n处理条件的循环，使得| T（a1× G1 + a2×G2 + ... + an×Gn）| 小于G1，G2中的最小值。 。 。 和Gn，其中n是2或更大的整数，G1，...。 。 。 ，Gn分别表示作为第一处理条件的膜生长速度的第一膜生长速度。 。 。 以及作为第n处理条件的膜生长速度的第n膜生长速度，膜生长率表示在每个处理条件下每单位周期形成的膜的厚度。 当执行ALD时，成膜方法可以精确且均匀地控制薄膜的厚度。