公开(公告)号：US10274834B2

公开(公告)日：2019-04-30

申请号：US15915674

申请日：2018-03-08

Applicant: ASML Netherlands B.V.

Inventor： Alexander Ypma ,  Jasper Menger ,  David Deckers ,  David Han ,  Adrianus Cornelis Matheus Koopman ,  Irina Lyulina ,  Scott Anderson Middlebrooks ,  Richard Johannes Franciscus Van Haren ,  Jochem Sebastiaan Wildenberg

IPC: G03F7/20 ,  G06F16/26 ,  G03F9/00

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US09753377B2

公开(公告)日：2017-09-05

申请号：US14420311

申请日：2013-06-27

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergun Cekli ,  Irina Lyulina ,  Manfred Gawein Tenner ,  Richard Johannes Franciscus Van Haren ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03B27/32 ,  G03B27/74 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

公开(公告)号：US20150219438A1

公开(公告)日：2015-08-06

申请号：US14427287

申请日：2013-09-20

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Arie Jeffrey Den Boef ,  Justin Lloyd Kreuzer ,  Simon Gijsbert Josephus Mathijssen ,  Gerrit Johannes Nijmeijer ,  J. Christian Swindal ,  Patricius Aloysius Jacobus Tinnemans ,  Richard Johannes Franciscus Van Haren

IPC: G01B11/00 ,  G03F7/20 ,  H01L21/66

CPC classification number: G01B11/002 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  H01L22/12

Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.

Abstract translation: 一种用于测量标记位置的装置，该装置包括使用由照明装置提供的辐射将辐射引导到标记上的物镜; 接收由标记衍射并被镜面反射的辐射的光学装置，其中所述光学装置被配置为提供第一图像和第二图像，所述第一图像通过相干地添加镜面反射辐射和正衍射级辐射而形成，并且所述第二图像 通过相干地加入镜面反射辐射和负衍射级辐射形成; 以及检测装置，用于检测第一和第二图像的辐射强度的变化，并计算标记在测量方向上的位置。

公开(公告)号：US08980724B2

公开(公告)日：2015-03-17

申请号：US14202835

申请日：2014-03-10

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Harry Sewell ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Manfred Gawein Tenner ,  Maya Angelova Doytcheva

IPC: H01L21/76 ,  G03F9/00 ,  G03F7/00 ,  G03F7/105 ,  G03F7/20 ,  H01L21/027 ,  H01L21/3213

CPC classification number: G03F9/7046 ,  G03F7/0035 ,  G03F7/105 ,  G03F7/70466 ,  G03F9/7076 ,  H01L21/0273 ,  H01L21/32139

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract translation: 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 染料可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。

公开(公告)号：US12254392B2

公开(公告)日：2025-03-18

申请号：US17423658

申请日：2019-12-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Faegheh Hasibi ,  Leon Paul Van Dijk ,  Maialen Larranaga ,  Alexander Ypma ,  Richard Johannes Franciscus Van Haren

IPC: G06F30/398 ,  G03F7/00 ,  G06F30/27 ,  G06N3/04 ,  G06F119/18 ,  G06N3/0464

Abstract: A method for predicting a property associated with a product unit. The method may include: obtaining a plurality of data sets, wherein each of the plurality of data sets includes data associated with a spatial distribution of a parameter across the product unit; representing each of the plurality of data sets as a multidimensional object; obtaining a convolutional neural network model trained with previously obtained multidimensional objects and properties of previous product units; and applying the convolutional neural network model to the plurality of multidimensional objects representing the plurality of data sets, to predict the property associated with the product unit.

公开(公告)号：US20240019788A1

公开(公告)日：2024-01-18

申请号：US18232570

申请日：2023-08-10

Applicant: ASML Netherlands B.V.

Inventor： Alexander Ypma ,  Jasper Menger ,  David Deckers ,  David Han ,  Adrianus Cornelis Matheus Koopman ,  Irina Lyulina ,  Scott Anderson Middlebrooks ,  Richard Johannes Franciscus Van Haren ,  Jochem Sebastiaan Wildenberg

IPC: G03F7/00

CPC classification number: G03F7/706837 ,  G03F7/70525 ,  G03F7/70616 ,  G06F16/26

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US11493851B2

公开(公告)日：2022-11-08

申请号：US17482630

申请日：2021-09-23

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergün Cekli ,  Xing Lan Liu ,  Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

公开(公告)号：US11300888B2

公开(公告)日：2022-04-12

申请号：US16485499

申请日：2018-02-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Leon Paul Van Dijk ,  Ilya Malakhovsky ,  Ronald Henricus Johannes Otten

IPC: G03F7/20 ,  G03F9/00

Abstract: A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.

公开(公告)号：US11294294B2

公开(公告)日：2022-04-05

申请号：US16966536

申请日：2019-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Leon Paul Van Dijk ,  Orion Jonathan Pierre Mouraille ,  Anne Marie Pastol

IPC: G03F7/20 ,  G03F9/00

Abstract: Methods and apparatuses for determining a position of an alignment mark applied to a region of a first layer on a substrate using a lithographic process by: obtaining an expected position of the alignment mark; obtaining a geometrical deformation of the region due to a control action correcting the lithographic process; obtaining a translation of the alignment mark due to the geometrical deformation; and determining the position of the alignment mark based on the expected position and the translation.

公开(公告)号：US11187995B2

公开(公告)日：2021-11-30

申请号：US16346135

申请日：2017-11-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Victor Emanuel Calado ,  Youping Zhang ,  Maurits Van Der Schaar ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu

IPC: G03F7/20

Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.