公开(公告)号：US20230395354A1

公开(公告)日：2023-12-07

申请号：US18450635

申请日：2023-08-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32174 ,  H01J37/32477 ,  H01L21/67109 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32706

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20230377839A1

公开(公告)日：2023-11-23

申请号：US18198788

申请日：2023-05-17

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Randy Heckman ,  Victor Brouk ,  Daniel J. Hoffman

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/3299 ,  H01J37/32935 ,  H01J37/32174

Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.

公开(公告)号：US20210327679A1

公开(公告)日：2021-10-21

申请号：US17245825

申请日：2021-04-30

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Daniel J. Hoffman ,  Victor Brouk

IPC: H01J37/32

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

公开(公告)号：US20210241996A1

公开(公告)日：2021-08-05

申请号：US17171164

申请日：2021-02-09

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Kevin Fairbairn ,  Denis Shaw ,  Victor Brouk

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US11011349B2

公开(公告)日：2021-05-18

申请号：US15667239

申请日：2017-08-02

Applicant: Advanced Energy Industries, Inc.

Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter

IPC: H01J37/32

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

公开(公告)号：US20210005428A1

公开(公告)日：2021-01-07

申请号：US16896709

申请日：2020-06-09

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US09142388B2

公开(公告)日：2015-09-22

申请号：US14227583

申请日：2014-03-27

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel J. Hoffman ,  Daniel Carter ,  Victor Brouk ,  Karen Peterson ,  Randy Grilley

IPC: H01J7/24 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32541 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/327 ,  H05H1/46 ,  H05H2001/4675

Abstract: This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

Abstract translation: 本公开描述了用于将能量电容耦合到等离子体中以点燃和维持远程等离子体源内的等离子体的系统，方法和装置。 功率由至少部分地围绕或被第二电极围绕的第一电极提供。 第二个电极可以接地或浮动。 可以布置第一和第二介电部件以将电极中的一个或两个与等离子体分开，从而将等离子体与一个或两个电极隔离。

公开(公告)号：US09105447B2

公开(公告)日：2015-08-11

申请号：US14011305

申请日：2013-08-27

Applicant: Advanced Energy Industries, Inc.

Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter ,  Dmitri Kovalevskii

IPC: H01J37/24 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/241 ,  H01J37/32146

Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

Abstract translation: 本公开描述了用于操作等离子体处理室的系统，方法和装置。 特别地，可以将与离子电流补偿组合的周期性电压功能作为偏置提供给衬底支架作为修改的周期性电压功能。 这进一步影响基板表面上的DC偏压，该DC偏压控制入射在基板的表面上的离子的离子能。 周期电压功能的峰 - 峰电压可以控制离子能量，而离子电流补偿可以控制离子的离子能量分布函数的宽度。 测量修改的周期性电压功能可以提供计算等离子体中的离子电流和等离子体护套的护套电容的方法。 离子能量分布函数可以通过修改的周期性电压函数的控制来定制并产生多个离子能量峰值。

公开(公告)号：US20250166970A1

公开(公告)日：2025-05-22

申请号：US18925583

申请日：2024-10-24

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20250022698A1

公开(公告)日：2025-01-16

申请号：US18350516

申请日：2023-07-11

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Victor Brouk ,  Denis Shaw

IPC: H01J37/32

Abstract: A bias supply configured for predicting behavior of one or more aspects of a plasma load by measuring a current waveform is disclosed. The bias supply applies an asymmetric periodic voltage waveform and a corresponding current waveform. The asymmetric periodic voltage waveform includes a first section comprising a positive pulse peak and a second section comprising a negative voltage ramp. The bias supply receives data about the current waveform during the first section, and based upon the received data, provides information about a plasma load.