Low power memory throttling
    21.
    发明授权

    公开(公告)号:US10198216B2

    公开(公告)日:2019-02-05

    申请号:US15168043

    申请日:2016-05-28

    Abstract: In one form, a data processing system includes a memory channel having a plurality of ranks, and a data processor. The data processor is coupled to the memory channel and is adapted to access each of the plurality of ranks. In response to detecting a predetermined event, the data processor selects an active rank of the plurality of ranks and places other ranks besides the active rank in a low power state, wherein the other ranks include at least one rank with a pending request at a time of detection of the predetermined event. The data processor subsequently processes a memory access request to the active rank.

    Memory calibration system and method

    公开(公告)号:US12243576B2

    公开(公告)日:2025-03-04

    申请号:US18198709

    申请日:2023-05-17

    Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

    MEMORY CALIBRATION SYSTEM AND METHOD
    26.
    发明公开

    公开(公告)号:US20230368832A1

    公开(公告)日:2023-11-16

    申请号:US18198709

    申请日:2023-05-17

    Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

    Memory calibration system and method

    公开(公告)号:US11664062B2

    公开(公告)日:2023-05-30

    申请号:US16938855

    申请日:2020-07-24

    Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

    REFRESH MANAGEMENT FOR MEMORY
    30.
    发明申请

    公开(公告)号:US20220122652A1

    公开(公告)日:2022-04-21

    申请号:US17564575

    申请日:2021-12-29

    Abstract: A memory controller interfaces with a random access memory over a memory channel. A refresh control circuit monitors an activate counter which counts a rolling number of activate commands sent over the memory channel to a memory region of the memory. In response to the activate counter being above an intermediate management threshold value, the refresh control circuit only issue a refresh management (RFM) command if there is no REF command currently held at the refresh command circuit for the memory region.

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