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公开(公告)号:US10198216B2
公开(公告)日:2019-02-05
申请号:US15168043
申请日:2016-05-28
Applicant: Advanced Micro Devices, Inc.
Inventor: Kedarnath Balakrishnan , Kevin M. Brandl , James R. Magro
IPC: G06F3/06 , G06F13/16 , G11C7/04 , G11C11/406 , G11C11/4072
Abstract: In one form, a data processing system includes a memory channel having a plurality of ranks, and a data processor. The data processor is coupled to the memory channel and is adapted to access each of the plurality of ranks. In response to detecting a predetermined event, the data processor selects an active rank of the plurality of ranks and places other ranks besides the active rank in a low power state, wherein the other ranks include at least one rank with a pending request at a time of detection of the predetermined event. The data processor subsequently processes a memory access request to the active rank.
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公开(公告)号:US20170344309A1
公开(公告)日:2017-11-30
申请号:US15168043
申请日:2016-05-28
Applicant: Advanced Micro Devices, Inc.
Inventor: Kedarnath Balakrishnan , Kevin M. Brandl , James R. Magro
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0625 , G06F3/0673 , G06F13/16 , G06F13/1684 , G11C7/04 , G11C11/40615 , G11C11/4072
Abstract: In one form, a data processing system includes a memory channel having a plurality of ranks, and a data processor. The data processor is coupled to the memory channel and is adapted to access each of the plurality of ranks. In response to detecting a predetermined event, the data processor selects an active rank of the plurality of ranks and places other ranks besides the active rank in a low power state, wherein the other ranks include at least one rank with a pending request at a time of detection of the predetermined event. The data processor subsequently processes a memory access request to the active rank.
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公开(公告)号:US12243576B2
公开(公告)日:2025-03-04
申请号:US18198709
申请日:2023-05-17
Applicant: Advanced Micro Devices, Inc.
Inventor: Jing Wang , Kedarnath Balakrishnan , Kevin M. Brandl , James R. Magro
IPC: G06F9/24 , G06F1/3203 , G06F9/4401 , G11C11/406
Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.
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公开(公告)号:US20240112747A1
公开(公告)日:2024-04-04
申请号:US17957808
申请日:2022-09-30
Applicant: Advanced Micro Devices, Inc.
Inventor: Tahsin Askar , Naveen Davanam , Kedarnath Balakrishnan , Kevin M. Brandl , James R. Magro
IPC: G11C29/10
CPC classification number: G11C29/10
Abstract: A memory controller includes a first arbiter for selecting memory commands for dispatch to a memory over a first channel, a second arbiter for selecting memory commands for dispatch to the memory over a second channel, and a test circuit. The test circuit generates a respective testing sequence of read commands and write commands for each of the first channel and second channel, and causes the testing sequences to be transmitted over the first and second channels at least partially overlapping in time without selection by the first or second arbiters.
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公开(公告)号:US20240112722A1
公开(公告)日:2024-04-04
申请号:US17957820
申请日:2022-09-30
Applicant: Advanced Micro Devices, Inc.
Inventor: Kevin M. Brandl , James R. Magro , Kedarnath Balakrishnan , Jing Wang
IPC: G11C11/4078 , G11C11/406
CPC classification number: G11C11/4078 , G11C11/40615 , G11C11/40622
Abstract: A memory controller for generating accesses for a memory includes a row hammer logic circuit for providing a sample request. In response to the sample request, the memory controller generates a sample command for dispatch to the memory to cause the memory to capture a current row. In response to a completion of the sample command, the memory controller generates a mitigation command for dispatch to the memory.
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公开(公告)号:US20230368832A1
公开(公告)日:2023-11-16
申请号:US18198709
申请日:2023-05-17
Applicant: Advanced Micro Devices, Inc.
Inventor: Jing Wang , Kedarnath Balakrishnan , Kevin M. Brandl , James R. Magro
IPC: G11C11/406 , G06F9/4401 , G06F1/3203
CPC classification number: G11C11/40611 , G06F9/442 , G06F1/3203 , G11C11/40615 , G06F9/4401
Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.
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公开(公告)号:US11682445B2
公开(公告)日:2023-06-20
申请号:US17526429
申请日:2021-11-15
Applicant: Advanced Micro Devices, Inc.
Inventor: Kevin M. Brandl , Naveen Davanam , Oswin E. Housty
IPC: G11C11/406 , G06F12/02 , G06F13/40 , G06F13/16 , G06F1/3234
CPC classification number: G11C11/40622 , G06F1/3275 , G06F12/0238 , G06F13/1689 , G06F13/4072 , G06F13/4086
Abstract: A system and method for use in dynamic random-access memory (DRAM) comprising entering into a self-refresh mode of operation, exiting the self-refresh mode of operation in response to commands from a self-refresh state machine memory operation (MOP) array, and updating a device state of the DRAM for a target power management state in response to commands from the MOP array.
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公开(公告)号:US11664062B2
公开(公告)日:2023-05-30
申请号:US16938855
申请日:2020-07-24
Applicant: Advanced Micro Devices, Inc.
Inventor: Jing Wang , Kedarnath Balakrishnan , Kevin M. Brandl , James R. Magro
IPC: G06F9/00 , G11C11/406 , G06F9/4401 , G06F1/3203
CPC classification number: G11C11/40611 , G06F1/3203 , G06F9/442 , G11C11/40615 , G06F9/4401
Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.
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公开(公告)号:US11636054B2
公开(公告)日:2023-04-25
申请号:US17219273
申请日:2021-03-31
Applicant: Advanced Micro Devices, Inc.
Inventor: Kevin M. Brandl , Indrani Paul , Jean J. Chittilappilly , Abhishek Kumar Verma , James R. Magro , Kavyashree Pilar
IPC: G06F1/3234 , G06F13/16 , G11C11/406 , G06F1/3296 , G06F3/06
Abstract: A memory controller includes a command queue and an arbiter operating in a first voltage domain, and a physical layer interface (PHY) operating in a second voltage domain. The memory controller includes isolation cells operable to isolate the PHY from the first voltage domain. A local power state controller, in response to a first power state command, provides configuration and state data for storage in an on-chip RAM memory, causes the memory controller to enter a powered-down state, and maintains the PHY in a low-power state in which the second voltage domain is powered while the memory controller is in the powered-down state.
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公开(公告)号:US20220122652A1
公开(公告)日:2022-04-21
申请号:US17564575
申请日:2021-12-29
Applicant: Advanced Micro Devices, Inc.
Inventor: Kevin M. Brandl , Kedarnath Balakrishnan , Jing Wang , Guanhao Shen
IPC: G11C11/406
Abstract: A memory controller interfaces with a random access memory over a memory channel. A refresh control circuit monitors an activate counter which counts a rolling number of activate commands sent over the memory channel to a memory region of the memory. In response to the activate counter being above an intermediate management threshold value, the refresh control circuit only issue a refresh management (RFM) command if there is no REF command currently held at the refresh command circuit for the memory region.
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